News Stories and Press Releases

March 29, 2016

Everspin Technologies Joins the OpenPOWER Foundation

Chandler, AZ, March 29, 2016 Everspin Technologies today announced that it has joined the OpenPOWER Foundation, an open development community based on the POWER microprocessor architecture.

Everspin joins a growing roster of technology organizations working collaboratively to build advanced server, networking, storage and acceleration technology as well as industry leading open source software aimed at delivering more choice, control and flexibility to developers of next-generation, hyperscale and cloud data centers. The group makes POWER hardware and software available to open development for the first time, as well as making POWER intellectual property licensable to others, greatly expanding the ecosystem of innovators on the platform. .

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March 1, 2016

Everspin Produces 1Mb MRAM with Quad SPI Interface

Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.

This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.

Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.

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February 23, 2016

Micross Components to Distribute Everspin Technologies MRAM Products

Micross to provide access to Everspin MRAM in die form for those customers requiring small form factors

ORLANDO, Florida, February 23, 2016 – Micross Components (“Micross”), a global provider of specialty electronic components with a 35-year history in providing authentic, high-reliability products, announced an agreement with Everspin Technologies to distribute Everspin’s industry-leading MRAM products in die and wafer form.

MRAM has become the memory of choice in applications requiring intensive data logging, protection of data in the event of power loss and the ability to operate reliably at high speed over extreme temperatures. 
 

February 22, 2016

Everspin announces production of the first MRAM with a Quad SPI interface

The MR10Q010 1Mb Quad SPI MRAM runs at 104MHz, offering the fastest non-volatile write speeds in the industry and is now available in both SOIC and BGA packages.
Chandler, AZ, Feb 22, 2016 - Everspin has announced production availability of the world’s fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM. This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash. Combined with limitless write cycle endurance, the MR10Q010 is ideal for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical data storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.

February 19, 2016

Everspin expands automotive grade MRAM product line

Everspin offers a 16Mb MRAM with automotive temperature range and a 128kB SPI MRAM in Grade 1 and Grade 3 ranges for use in automotive and other high reliability systems

Chandler, AZ, Feb 19, 2016
Everspin has announced availability of two new additions to its high performance MRAM automotive product line. The 16Mb MRAM now is available in the automotive temperature range of -40 C to 125 C and comes in both x8 and x16 IO configurations. With fast 45 ns read and write cycle times in a parallel asynchronous SRAM like interface, the 16Mb automotive MRAM gives designers a very high performance and high reliability persistent memory solution for the demands of this rapidly growing market.

February 18, 2016

Schneider Electric Selects Everspin for Modicon M580 ePAC next generation Programmable Automation Controllers

Chandler, AZ, February 18, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, is providing its 16-Megabit MR4A16BMA35 Magnetoresistive RAM (MRAM) to users of Schneider Electric’s Modicon M580 High End Programmable Automation Controllers, offering them unprecedented data backup capabilities.

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February 16, 2016

Everspin to Present at ROTH Capital Partners Conference

Chandler, AZ, February 16, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that Phill LoPresti, Chief Executive Officer, and Jeff Winzeler, Chief Financial Officer, will present at the 28th annual ROTH Conference, to be held March 13-16, 2016 at the Ritz Carlton hotel in Dana Point, California.

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February 16, 2016

Everspin to Showcase MRAM Solutions at Embedded World 2016

Chandler, AZ, February 16, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that it will showcase a range of MRAM solutions in booth 449 in Hall 4A at the upcoming Embedded World conference in Nuremberg, Germany on February 22-24.

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January 28, 2016

Cobham Announces QML V Qualification of their MRAM with IP from Everspin Technologies, Inc.

Colorado Springs, Colorado – Cobham Semiconductor Solutions announces QML V certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc.

The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flatpack, and a 16Mbit device, UT8MR2M8, available in a 40-lead flatpack.  Both are in production and have been designed into various future satellites.

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December 7, 2015

ARM Sizes Up Moore's Law – Views MRAM positively for future scaling

Rick Merrit, Silicon Valley Bureau Chief for EE Times, reports on the keynote by Greg Yeric of ARM Research at the annual International Electron Devices Meeting (IEDM) in Washington D.C. 

Acording to Yeric, "The physical nature of resistive RAM and Phase Change Memory will most likely limit both density and endurance to below requirements for main memory,” he wrote. “If MRAM power and cost improve, its superior endurance makes it a potential candidate to enable memory as compute..."

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