News Stories and Press Releases

August 3, 2016

Everspin 256Mb ST-MRAM with Perpendicular MTJ Sampling

Everspin 256Mb ST-MRAM with Perpendicular MTJ Now Sampling

Chandler, AZ, August 3, 2016.  Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.

Read the Press Release 

May 12, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times DesignLines
  

May 12, 2016

Everspin's MRAM shoots for the NVM crown

By Robin Harris for Storage Bits

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

Read the entire article

May 12, 2016

New non-volatile memory technologies poised to reshape system and application design

April 25, 2016

Why MRAM Hasn't Killed DRAM

By obin Harris for Storage Bits, April 20, 2016

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

Read the entire article

April 18, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times, Designlines

TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.

In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.

Read the entire interview from EE Times

April 13, 2016

Everspin Releases Fastest And Most Reliable Non-Volatile Storage Class Memory

Everspin plans production of 256Mb & 1Gb products, bringing the most advanced memory solutions to the multi-billion dollar market for persistent memory in storage devices and servers.

Chandler, AZ, April 13, 2016

Everspin Technologies announced today that it is shipping 256Mb ST-MRAM samples to global customers, enabling new product solutions using a true MRAM-based Storage Class Memory (SCM). This 256Mb ST-MRAM product breaks the record for the highest density commercial MRAM currently available in the market.

Everspin, having held the previous record, has consistently led the industry, delivering the highest density MRAM products. The company also plans further density increases and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology (ST-MRAM) later this year. Everspin’s MRAM has demonstrated interface speeds comparable to DRAM; the new 256Mb and 1Gb ST-MRAM products will continue this performance with DDR3 and DDR4 interfaces, respectively.

Read the entire press release

April 8, 2016

Spin Torque MRAM Showcased as the First Storage Class Memory

Chandler, AZ, April 7, 2016 Everspin Technologies today announced that IBM has demonstrated Everspin’s latest Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. The demonstration showed show how Everspin’s DDR3 ST-MRAM operates as persistent memory, accelerating storage and server applications. ConTutto is an IBM research configurable platform for innovation in the memory subsystem of an OpenPOWER node. The DDR3 interface on the Everspin Spin Torque MRAM makes it easy for developers to take advantage of the write speed and persistence of MRAM. In his keynote address, Brad McCredie, Vice President and IBM Fellow, described this as the first functional demonstration of a storage class memory in an enterprise system.

Read the entire press release

March 29, 2016

Everspin Technologies Joins the OpenPOWER Foundation

Chandler, AZ, March 29, 2016 Everspin Technologies today announced that it has joined the OpenPOWER Foundation, an open development community based on the POWER microprocessor architecture.

Everspin joins a growing roster of technology organizations working collaboratively to build advanced server, networking, storage and acceleration technology as well as industry leading open source software aimed at delivering more choice, control and flexibility to developers of next-generation, hyperscale and cloud data centers. The group makes POWER hardware and software available to open development for the first time, as well as making POWER intellectual property licensable to others, greatly expanding the ecosystem of innovators on the platform. .

Read the entire press release

March 1, 2016

Everspin Produces 1Mb MRAM with Quad SPI Interface

Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.

This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.

Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.

Read the entire article