News Stories and Press Releases
February 22, 2016
February 19, 2016
Everspin offers a 16Mb MRAM with automotive temperature range and a 128kB SPI MRAM in Grade 1 and Grade 3 ranges for use in automotive and other high reliability systems
February 18, 2016
Schneider Electric Selects Everspin for Modicon M580 ePAC next generation Programmable Automation Controllers
Chandler, AZ, February 18, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, is providing its 16-Megabit MR4A16BMA35 Magnetoresistive RAM (MRAM) to users of Schneider Electric’s Modicon M580 High End Programmable Automation Controllers, offering them unprecedented data backup capabilities.
February 16, 2016
Chandler, AZ, February 16, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that it will showcase a range of MRAM solutions in booth 449 in Hall 4A at the upcoming Embedded World conference in Nuremberg, Germany on February 22-24.
February 16, 2016
Chandler, AZ, February 16, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that Phill LoPresti, Chief Executive Officer, and Jeff Winzeler, Chief Financial Officer, will present at the 28th annual ROTH Conference, to be held March 13-16, 2016 at the Ritz Carlton hotel in Dana Point, California.
January 28, 2016
Colorado Springs, Colorado – Cobham Semiconductor Solutions announces QML V certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc.
The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flatpack, and a 16Mbit device, UT8MR2M8, available in a 40-lead flatpack. Both are in production and have been designed into various future satellites.
December 7, 2015
Rick Merrit, Silicon Valley Bureau Chief for EE Times, reports on the keynote by Greg Yeric of ARM Research at the annual International Electron Devices Meeting (IEDM) in Washington D.C.
Acording to Yeric, "The physical nature of resistive RAM and Phase Change Memory will most likely limit both density and endurance to below requirements for main memory,” he wrote. “If MRAM power and cost improve, its superior endurance makes it a potential candidate to enable memory as compute..."
November 6, 2015
By Pradeep Chakraborty, Control Engineering Asia.
Artesyn Embedded Technologies announced a new high performance VME single board computer, the MVME8105, to provide more computing performance, data throughput and long life cycle support for a range of high end industrial control, C4ISR and mission critical applications.
Featuring the Freescale QorIQ P5020 2.0 GHz processor, the MVME8105 provides 4 GB soldered DDR3-1333 MHz ECC memory, 512 K MRAM non-volatile memory and 8 GB eMMC NAND Flash. It offers multiple USB, Serial and Ethernet ports and supports a range of operating systems including Wind River VxWorks, Linux and Green Hills Integrity.
September 18, 2015
Mark Lapedus from Semiconductor Engineering interviews Everspin's president and CEO, Phillip LoPresti
Today, the industry is shipping various next-generation memory types, such as 3D NAND, MRAM and ReRAM. In fact, MRAM has been shipping for some time. To get a handle on MRAM, Semiconductor Engineering sat down to discuss the technology with Phillip LoPresti, president and chief executive of Everspin, a supplier of MRAMs.
September 16, 2015
Semiconductor Engineering, by Mark Lapedus.
Gaps in the memory hierarchy have created openings for new types of memory, and there is no shortage of possibilities.
The next big thing is a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). STT-MRAM is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction (MTJ) can be modified using a spin-polarized current.