Press Archive for 2025

Veteran semiconductor executive to lead global sales and product marketing

CHANDLER, Ariz. – Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of magnetoresistive random access memory (MRAM), announced today the appointment of Sean Dougherty as Vice President of Sales, effective immediately.

Dougherty brings over two decades of experience in the semiconductor industry, spanning engineering, customer enablement, and global sales leadership roles. Most recently, he served as Chief Revenue Officer of Intel's Altera division, where he led global revenue-generating functions including sales, field applications engineering, and business management. Before that, he led Altera's Worldwide Technical Customer Enablement organization, overseeing technical sales and support teams globally. In his role at Everspin, Dougherty will lead the company’s sales strategy and growth, provide leadership to its sales and marketing team to secure new business while ensuring customer satisfaction.

Earlier in his career, Dougherty held engineering leadership roles in the communications sector, managing teams focused on ASIC, FPGA, and system design for high-volume commercial deployments. He has a Bachelor of Science in Computer Engineering from the Wentworth Institute of Technology in Boston.

David Schrenk, who has been the VP of Sales and Business Development for the last three years, will now focus his efforts exclusively on Business Development. Schrenk successfully navigated Everspin to a path of revenue growth while developing strategic partnerships, which has turned into a personal objective and passion for him.

"We have reached a point in our journey where both sales execution and strategic partnerships require distinct and dedicated leadership,” said Sanjeev Aggarwal, President and CEO of Everspin.  “This structural change reflects our ambition to accelerate both direct revenue monetization and strategic expansion, allowing us to better serve our customers and unlock new opportunities. Sean brings a combination of engineering depth and customer-first sales leadership, and his track record of building high-performing teams and scaling revenue aligns perfectly with our next phase of growth across new and existing markets."

"Everspin's MRAM solutions are solving data persistence and power challenges across industries," said Dougherty. "I'm excited to help expand that reach through deeper technical engagement, strong global partnerships and continued delivery of differentiated memory solutions."

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New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025

CHANDLER, Ariz.--(BUSINESS WIRE)—March 10,2025--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced its latest high-reliability MRAM expansion. The newest additions to the PERSYST EMxxLX family, the EM064LX HR and EM128LX HR, will operate at temperatures from -40°C to +125°C, meeting the AEC-Q100 Grade 1 standard for automotive applications. This expanded temperature range addresses the growing demand for persistent, high-speed memory in aerospace, defense, and extreme industrial environments.

"As embedded systems continue to push the boundaries of reliability and endurance, memory technology must keep pace with extreme operating environments," said Sanjeev Aggarwal, President and CEO at Everspin Technologies. "Our latest high-reliability PERSYST MRAM provides designers with a robust, fast, and scalable alternative to Static RAM or NOR flash, ensuring mission success in automotive, aerospace, and industrial applications."

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Everspin’s AgILYST MRAM IP and manufacturing to support Purdue University’s Applied Research Institute ME Commons grant initiative

CHANDLER, Ariz.—March, 6 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, announced a strategic award to work with a consortium led by Purdue University to utilize Everspin MRAM as the underpinning in a program called CHEETA (CMOS+MRAM Hardware for Energy Efficient AI). The contract allows for phases totaling up to $10.5 million for Everspin Technologies over four years. The current phase with Everspin Technologies is valued at approximately $4 million.

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Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families

CHANDLER, Ariz.--(BUSINESS WIRE) –Feb 18, 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field Programmable Gate Arrays (FPGA). Enabled through the Lattice Radiant™ software suite, this validation highlights MRAM's role as a robust and reliable configuration memory device for a wide range of applications in industries such as industrial, aerospace, military, and automotive.

The shift from traditional flash memory to MRAM in FPGA configuration reflects the growing demands of modern applications. Unlike NOR flash, which requires long program and erase time, MRAM offers high endurance, fast read/write speeds, and exceptional data retention. These attributes make MRAM particularly suited for mission-critical environments, including real-time sensor processing, data logging in avionics, and in-orbit reprogramming for space systems. Customers are already taking advantage of the MRAM support in their designs that utilize Lattice’s FPGA.

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