News Stories and Press Releases
August 5, 2014
The Increasingly Diverse World of Storage
By Arthur Cole, IT Business Edge. ... Waiting in the wings ... are a number of advanced storage technologies that promise even further disruption. Magnetoresistive RAM (MRAM), for example, is poised to make its mark on enterprise and cloud-based workloads through companies like Mangstor and Everspin. The pair has teamed up on a new line of intelligent storage devices that provide high-performance acceleration and data protection on streamlined, low-power platforms.
August 4, 2014
Altera to Demonstrate FPGA Technologies at Flash Memory Summit 2014
SAN JOSE, Calif., Aug. 4, 2014 /PRNewswire/ -- Altera Corporation will demonstrate its programmable logic technology and present in multiple technology sessions at the Flash Memory Summit at the Santa Clara Convention Center, taking place August 5 to 7, 2014. Altera partner, Everspin Technologies, will also demonstrate porting its ST-MRAM to Altera's Stratix® FPGA family showcasing high reliability and ultra low latency which offers customers the combined benefits of both Flash and DRAM -- improved application performance, data security, system crash recovery time and SSD reliability.
August 4, 2014
Everspin to Demonstrate Spin-Torque MRAM with Altera FPGAs at Flash Memory Summit 2014
Everspin Technologies will demonstrate the first commercially-available Spin Torque MRAM (ST-MRAM) at the Flash Memory Summit, Aug 5-7, 2014 in Santa Clara, in the Altera booth #621 and in the Mobiveil booth #721.
February 14, 2014
MRAM Technology Status
A study by the NASA Electronic Parts and Packaging Program. By Jason Heidecker, Jet Propulsion Laboratory, Pasadena, California
Each type of memory has a unique set of advantages and disadvantages. The current MRAM technology, known as toggle MRAM, will be the technology of choice for space systems in the coming years. This report focuses on toggle MRAM and its technology, reliability, vendors, and space-readiness.
January 6, 2014
Storage Visions 2014: Everspin Describes their ST-MRAM Product Roadmap for Storage Products
Phillip LoPresti, Everspin CEO, interviewed during the Storage Visions conference in Las Vegas, reviews the memory requirements for storage, wireless and portable equipments and describes how ST-MRAM technology introduced by Everspin will began to replace DRAM in storage applications within two years.
November 24, 2013
While several Japanese and US memory companies join forces to develop an MRAM replacement for DRAM, Everspin Technologies of Chandler, AZ already markets an MRAM product.
by Brooke Crothers. While several Japanese and US memory companies join forces to develop an MRAM replacement for DRAM, Everspin Technologies of Chandler, AZ already markets an MRAM product.
November 18, 2013
Everspin ST-MRAM Incorporated For Cache Memory Into Buffalo Memory SSD
Everspin Technologies today announced that Buffalo Memory is introducing a new industrial SATA III SSD that incorporates Everspin's Spin-Torque MRAM (ST-MRAM) as cache memory.
August 12, 2013
Everspin Raises $15M Growth Financing
Company surpasses 10M cumulative MRAM product shipments; new investment drives continued sales expansion
Chandler, AZ - Everspin Technologies today announced that it has closed a Series B financing,raising $15 million to accelerate growth in the enterprise storage market and support the launch of its ground-breaking Spin-Torque MRAM (ST-MRAM) products.
June 24, 2013
AEWIN Chooses Everspin’s MRAM in Multiplayer Gaming Systems SGA-5010, R283 and GA-2210 to Enhance Gaming Product Reliability
AEWIN Technologies, a leader in equipment for the amusement and casino gaming industries, today announced that it has selected Everspin's MRAM to enhance reliability and security in its SGA-5010, R283, and GA-2210 systems that execute multi-player gaming.
April 8, 2013
ST-MRAM gets practical
J. M. Slaughter, N.D. Rizzo, et.al., review key properties for commercial ST-MRAM circuits, discuss the challenges to achieving the many performance and scaling goals that are being addressed in current development around the world, recent results in the field, and present first results from a new, fully-functional 64-Mb, DDR3, ST-MRAM circuit.