News Stories and Press Releases

By Tom Coughlin, Forbes. ... Mangstor, a manufacturer of NVMe solid-state drives, announced that they were using Everspin's Spin Tunnel Torque Random Access Memory (STT-RAM) to replace some DRAM in their recently introduced MX6000 family of high performance NVMe intelligent storage devices for enterprise and cloud applications. The STT-RAM reduces write data latency while protecting against power loss.

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CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc., the world's leading developer and manufacturer of MRAM worldwide, today disclosed several new customer and ecosystem relationships as it ramps production with the world's first commercially-available Spin Torque MRAM (ST-MRAM). Everspin will be at the Flash Memory Summit in Santa Clara from Aug 5-7, showcasing solutions based on its ST-MRAM with FPGA leader Altera (Booth #621), leading memory module supplier SMART Modular Technologies (Booth #222), memory solutions provider Mobiveil (Booth #721), and Enterprise Non-Volatile Memory Express NVMe Storage Solutions leader Mangstor.

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Flash Memory Summit 2014 - Joe O'Hare, Director of Marketing at Everspin Technologies, sits down with Paul Acorn of TweakTown to discuss Everspin's progress in developing a DDR3 interface MRAM for the data storage market.

By Joseph F. Kovar, CRN. Everspin, of Chandler, Ariz., moved to shake up the memory market when it demonstrated what it called the world's first commercially-available Spin Torque MRAM (ST-MRAM). Unlike conventional memory, where electrons are moved in a circuit to indicate a bit value of 0 or 1, ST-MRAM adjusts the actual spin of the electrons to increase performance while remain non-volatile. Everspin worked with Altera and Mobiveil to demonstrate a PCIe-based storage system featuring low latency and high endurance, and with SMART Modular Technologies to demonstrate DDR3 non-volatile DIMM using ST-MRAM.

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By Rick Merritt, EE Times. Just around the bend in an out-of-the-way corner of the Smart Modular both, Everspin Technologies showed its ST-MRAM chips in a mini-DIMM card. Separately, startup Mangstor announced it will use one of Everspin's 64 Mbit chips to buffer data writes to NAND on its new MX6000 memory card.

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SMART Modular Technologies will demonstrate a PCIe-based, high speed, and persistent memory solution using DDR3 Spin-Torque MRAM (ST-MRAM) from Everspin Technologies, Inc.

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By Arthur Cole, IT Business Edge. ... Waiting in the wings ... are a number of advanced storage technologies that promise even further disruption. Magnetoresistive RAM (MRAM), for example, is poised to make its mark on enterprise and cloud-based workloads through companies like Mangstor and Everspin. The pair has teamed up on a new line of intelligent storage devices that provide high-performance acceleration and data protection on streamlined, low-power platforms.

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SAN JOSE, Calif., Aug. 4, 2014 /PRNewswire/ -- Altera Corporation will demonstrate its programmable logic technology and present in multiple technology sessions at the Flash Memory Summit at the Santa Clara Convention Center, taking place August 5 to 7, 2014. Altera partner, Everspin Technologies, will also demonstrate porting its ST-MRAM to Altera's Stratix® FPGA family showcasing high reliability and ultra low latency which offers customers the combined benefits of both Flash and DRAM -- improved application performance, data security, system crash recovery time and SSD reliability.

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Everspin Technologies will demonstrate the first commercially-available Spin Torque MRAM (ST-MRAM) at the Flash Memory Summit, Aug 5-7, 2014 in Santa Clara, in the Altera booth #621 and in the Mobiveil booth #721.

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A study by the NASA Electronic Parts and Packaging Program.  By Jason Heidecker, Jet Propulsion Laboratory, Pasadena, California

Each type of memory has a unique set of advantages and disadvantages. The current MRAM technology, known as toggle MRAM, will be the technology of choice for space systems in the coming years. This report focuses on toggle MRAM and its technology, reliability, vendors, and space-readiness.

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