News Stories and Press Releases

December 15, 2016

Everspin to Participate in 19th Annual Needham Growth Conference on January 11

Chandler, AZ, December 15, 2016 — Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will participate in the 19th Annual Needham Growth Conference on Wednesday, January 11 in New York City. Webcast information for the company’s January 11 presentation at 11:20 am ET is available on the Investor Relations section of Everspin’s website at www.investor.everspin.com.

About Everspin Technologies

Everspin Technologies is the leading provider of MRAM solutions. Everspin’s MRAM solutions offer the persistence of non-volatile memory with the speed and endurance of random access memory (RAM), and enable the protection of mission critical data particularly in the event of power interruption or failure. Everspin’s MRAM solutions allow its customers in the industrial, automotive and transportation, and enterprise storage markets to design high performance, power efficient and reliable systems without the need for bulky batteries or capacitors. Everspin is the only provider of commercially available MRAM solutions and over the past eight years has shipped over 60 million MRAM units. For more information, visit www.everspin.com.

December 4, 2016

62nd International Electron Devices Meeting (IEDM), San Francisco

December 3-7, 2016

Everspin Technologies, jointly with GlobalFoundries, will present an invited paper titled: “Technology for Reliable Spin-Torque MRAM Products”

Speaking for Everspin, Jon Slaughter, Ph.D., Vice President, Technology Research and Development at Everspin Technologies states, “… we will present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.”

December 6th, 4pm in Session 2

November 14, 2016

Everspin Announces Third Quarter 2016 Financial Results

CHANDLER, Ariz., Nov. 14, 2016 (GLOBE NEWSWIRE) -- Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its third quarter ended September 30, 2016. Revenue for the third quarter of 2016 was $7.1 million, compared to $7.0 million for the third quarter of 2015. Everspin's net loss for the third quarter of 2016 was $1.4 million, or $0.54 per share, compared to a net loss of $4.5 million, or $1.77 per share for the third quarter of 2015.

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November 8, 2016

Everspin Previews Upcoming Products at Electronica

Everspin displays both the 1Gb DDR4 Perpendicular ST-MRAM device and a 1GByte DDR3 Memory Module (DIMM) at Stand A3-545

Chandler, AZ, November 8, 2016 — Everspin Technologies, Inc., as the leading provider of MRAM solutions, today announced that it will display the industry’s first 1Gb ST- MRAM designed with its perpendicular magnetic tunnel junction ( pMTJ) which is being processed by GlobalFoundries. Visitors can see the MRAM 300mm wafer at Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.

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November 7, 2016

Everspin Exhibiting MRAM Solutions at Electronica 2016

Everspin will display a range of customer solutions and technologies at Electronica 2016.

Chandler, AZ, November 7, 2016 — Everspin Technologies, Inc., (MRAM) the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that it will showcase a range of MRAM solutions in Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.

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November 3, 2016

Everspin to Announce Fiscal Third Quarter 2016 Results on November 14

CHANDLER, Ariz., – November 3, 2016 – Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetic RAM "MRAM", today announced that the company will report results for its fiscal third quarter which ended September 30, 2016 after the market closes on November 14, 2016 and will host a conference call to discuss its financial results at 5 pm Eastern Time on the same day.

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October 27, 2016

Making Unforgettable MRAM Memory with OpenPOWER

By Adam McPadden, Lead Engineer, Burlington Systems Lab, IBM

One of the key tenets of the OpenPOWER Foundation’s collaborative model is that having open systems and published interfaces allows people to create innovative architectures at all different areas of the system, including ones where there hasn’t been much change in decades like memory.

In validation of this approach, OpenPOWER members IBM, and Everspin have demonstrated a new way for OpenPOWER members to improve application performance with STT-MRAM on the memory bus of a POWER8 server.

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October 13, 2016

Everspin Technologies Announces Closing of its Initial Public Offering and Private Placement

Chandler, AZ – October 13, 2016 – Everspin Technologies, Inc. today announced the closing of its initial public offering of 5,000,000 shares of its common stock at a public offering price of $8.00 per share, for total gross proceeds of $40 million before the underwriting discount and commissions and other offering expenses.

All of the shares of common stock were offered by Everspin Technologies. The common stock is listed on The NASDAQ Global Market under the ticker symbol "MRAM." In addition, Everspin Technologies has granted the underwriters a 30-day option to purchase up to an additional 750,000 shares of common stock to cover over-allotments at the initial public offering price, less the underwriting discount and commissions.

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September 16, 2016

GF Debuts 7nm, Embedded MRAM

by Rick Merritt, EE Times

SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.

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September 16, 2016

MRAM Is Becoming Mainstream Memory

by Tom Coughlin, Forbes

Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.

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