News Stories and Press Releases

Chandler, AZ, May 22, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will participate in two investor conferences in June:

• Stifel 2017 Technology, Internet & Media Conference in San Francisco on June 5
• Needham’s Inaugural Automotive Tech Day in New York City on June 6

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Chandler, AZ, May 12, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its first quarter ended March 31, 2017. 

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Chandler, AZ, May 04, 2017 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced the appointment of Annie Flaig as Senior Vice President of Worldwide Sales.  Flaig will be responsible for day-to-day operations for all aspects of direct and indirect sales, as well as overseeing Everspin’s channel ecosystem.  She will lead the efforts to increase revenue and expand market activities, as well as contribute to the marketing and business strategy for Everspin products.  

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Chandler, AZ, March 29, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced that Kevin Conley, former CTO of SanDisk, Corp., and Mike Gustafson, former Chairman and CEO of Virident Systems, have been elected to Everspin’s Board of Directors. Bob England, who has served on Everspin’s board since July 2009, will be retiring in May 2017.

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Everspin unveils a new low latency, PCIe NVMe card based on Spin Torque MRAM

Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced its nvNITRO™ line of storage accelerators which delivers extremely fast read and write times with ultra-low latency. Everspin is introducing initial capacities of 1 Gigabyte and 2 Gigabyte of Spin Torque MRAM today, based on its 256Mb DDR3 ST-MRAM. 

Capacities from 4 Gigabyte up to 16 Gigabytes will be available later in this year utilizing Everspin’s 1 Gigabit DDR4 ST-MRAM. The nvNITRO™ ES1GB and ES2GB operate at a blazing 1,500,000 IOPS with 6 microsecond end-to-end latency. They are offered in a half-height, half-length (HHHL) PCIe card with two access modes: NVMe SSD and memory mapped IO (MMIO). 

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Everspin establishes DDR3 and DDR4 compatibility with its Spin Torque MRAM and Xilinx’s UltraScale FPGA DRAM memory controller.

Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., as the leading provider of MRAM solutions, today announced compatibility for its Spin Torque MRAM memory and Xilinx’s UltraScale™ FPGAs. Everspin is providing its customers a software script that modifies the existing Xilinx Memory Interface Generator (MIG) DDR3 DRAM controller to make it compatible with its 256 Megabit DDR3 ST-MRAM memory that is available now and will do the same for the 1 Gigabit DDR4 ST-MRAM by June of this year.

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JAG employs Everspin MRAM throughout their PdiCSTM Process Control Systems line

Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., and JAG Jakob Ltd. have announced that Everspin’s MR4A16B 16Mb MRAM is being used in JAG’s PdiCSTM Process Control Systems, boosting productivity by making process equipment more efficient. Complex and high value industrial production processes, like the ones commonly encountered in biotech and pharmaceutical markets, require high availability process control systems to maximize production throughput. JAG chose Everspin’s 16Mb MRAM in their PdiCSTM family to meet the needs of these demanding production processes which have up to 20-year lifetimes with constant 24/7 uptime.

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Chandler, AZ, February 23, 2017 — Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will participate in the 29th Annual Roth Conference on Monday, March 13 in Dana Point, CA. Webcast information for the company’s March 13 presentation at 4:00 p.m. Pacific Time is available on the Investor Relations section of Everspin’s website.

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Chandler, AZ, February 20, 2017 — Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will report results for its fiscal fourth quarter and fiscal year 2016 results which ended December 31, 2016 before the market opens on March 10, 2017 and will host a conference call to discuss its financial results at 8 a.m. Eastern Time on the same day.

Interested parties can listen to a live webcast of the conference call by visiting the Investor Relations section of Everspin’s website at www.investor.everspin.com. Dial in information for the conference call is available by registering at http://dpregister.com/10102015. The conference call and webcast will include forward-looking information. A replay of the conference call will also be available on the Investor Relations section of Everspin’s website at www.investor.everspin.com following the completion of the call.

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Duncan Bennett, Product Marketing Manager at Everspin Technologies, Inc., examines how MRAM has significant advantages over alternative memory technologies like Flash/EEPROM or SRAM, when operating in environments such as high altitude, space, or military applications. 

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