News Stories and Press Releases

New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025

CHANDLER, Ariz.--(BUSINESS WIRE)—March 10,2025--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced its latest high-reliability MRAM expansion. The newest additions to the PERSYST EMxxLX family, the EM064LX HR and EM128LX HR, will operate at temperatures from -40°C to +125°C, meeting the AEC-Q100 Grade 1 standard for automotive applications. This expanded temperature range addresses the growing demand for persistent, high-speed memory in aerospace, defense, and extreme industrial environments.

"As embedded systems continue to push the boundaries of reliability and endurance, memory technology must keep pace with extreme operating environments," said Sanjeev Aggarwal, President and CEO at Everspin Technologies. "Our latest high-reliability PERSYST MRAM provides designers with a robust, fast, and scalable alternative to Static RAM or NOR flash, ensuring mission success in automotive, aerospace, and industrial applications."

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Everspin’s AgILYST MRAM IP and manufacturing to support Purdue University’s Applied Research Institute ME Commons grant initiative

CHANDLER, Ariz.—March, 6 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, announced a strategic award to work with a consortium led by Purdue University to utilize Everspin MRAM as the underpinning in a program called CHEETA (CMOS+MRAM Hardware for Energy Efficient AI). The contract allows for phases totaling up to $10.5 million for Everspin Technologies over four years. The current phase with Everspin Technologies is valued at approximately $4 million.

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Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families

CHANDLER, Ariz.--(BUSINESS WIRE) –Feb 18, 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field Programmable Gate Arrays (FPGA). Enabled through the Lattice Radiant™ software suite, this validation highlights MRAM's role as a robust and reliable configuration memory device for a wide range of applications in industries such as industrial, aerospace, military, and automotive.

The shift from traditional flash memory to MRAM in FPGA configuration reflects the growing demands of modern applications. Unlike NOR flash, which requires long program and erase time, MRAM offers high endurance, fast read/write speeds, and exceptional data retention. These attributes make MRAM particularly suited for mission-critical environments, including real-time sensor processing, data logging in avionics, and in-orbit reprogramming for space systems. Customers are already taking advantage of the MRAM support in their designs that utilize Lattice’s FPGA.

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The aerospace industry has experienced rapid growth in recent years, fueled by both government initiatives and private sector ventures. In 2022, it was estimated that 5,500 operational satellites were actively orbiting Earth, and an additional 58,000 satellites will be launched by 2030. This rapid expansion relies heavily on advanced semiconductor technologies that enable the processing and transmission of critical data from space back to Earth.

Among the key enablers of this progress are Field-Programmable Gate Arrays (FPGAs), a type of integrated circuit that offers high performance, programming flexibility, and speed, making it ideal for the demanding requirements of space applications. In addition, a reliable memory solution is essential to ensure that the data processed by FPGAs is securely stored and efficiently delivered. Magnetoresistive Random-Access Memory (MRAM), a non-volatile memory technology, stands out as a leading solution due to its reliability, high endurance, and ability to perform under extreme conditions. As innovation continues to accelerate, the combination of FPGAs and MRAM is emerging as the optimal solution to meet the unique challenges of space technology.

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Everspin Technologies, Inc. announced a strategic award to develop a long-term plan to provide manufacturing services for aerospace and defense segments. Under the award, Everspin will provide a plan to mitigate risks to its MRAM manufacturing supply chain.

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Everspin announced a new strategic contract with Frontgrade Technologies. Under the contract, Everspin will provide its innovative PERSYST MRAM technology, logic design, and back-end-of-line manufacturing services to advance the development and demonstration of a Strategic Radiation Hardened (SRH) high-reliability eMRAM macro for use in future products by Frontgrade.

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Everspin announced a new strategic contract with QuickLogic Corporation. This project builds upon over 12 years of Everspin’s experience in delivering MRAM IP for strategic radiation hardened and space applications.”
Under the contract, Everspin will provide its innovative AgILYST MRAM technology, logic design, and back end of line manufacturing services to advance the development and demonstration of a Strategic Radiation Hardened (SRH) high-reliability Field Programmable Gate Array (FPGA) technology.

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Ernst & Young LLP announced that President and CEO Sanjeev Aggarwal of Everspin Technologies was named an Entrepreneur Of The Year® 2024 Pacific Southwest Award finalist. Now in its 38th year, Entrepreneur Of The Year is the preeminent competitive business award for audacious leaders who disrupt markets, revolutionize sectors and have a transformational impact on lives. Over the past four decades, the program has recognized the daring entrepreneurs with big ideas and bold actions that reshape our world.
Aggarwal was selected as a finalist by an independent panel of judges. The candidates were evaluated based on their demonstration of building long-term value through entrepreneurial spirit, purpose, growth and impact, among other core contributions and attributes.

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MRAM has proven itself as the highest performing persistent memory available in the commercial memory industry, combining the best aspects of random access memory with non-volatility. In a world in which protection of mission critical data is paramount, MRAM has stepped in and filled a void that conventional memory types such as SRAM, DRAM and Flash have left open. Everspin’s broad portfolio of MRAM fulfills the need for persistence, endurance, low latency.

Driven by pervasive applications such as data analytics, cloud computing, both terrestrial and extraterrestrial, artificial intelligence (AI), Edge AI including Industrial IoT, the market for persistent memory is projected to grow at a CAGR of 27.5% between 2020 and 2030[1]. This growth calls for a cohesive product strategy to address the market requirements.

Since Everspin introduced our first family of magnetoresistive random-access memory (MRAM) persistent memories, we have been a pioneering force, pushing the boundaries of what’s possible in data storage and processing. Today, we mark the next chapter in our journey with the launch of PERSYST: the new brand for our top-tier persistent memory families.

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