MRAM uses a 1 transistor, 1 MTJ cell to provide a simple, high-density memory.
Everspin uses a patented Toggle cell design that delivers high reliability.
During a read, the pass transistor is activated and data is read by comparing the resistance of the cell to a reference device.
During writes, the magnetic field from Write Line 1 and Write Line 2 writes the cell at the intersection of the two lines but does not disturb other cells on either line.
Data are always non-volatile for 20-years at temperature.