Published:
April 18, 2016
by Gary Hilson, EE Times, Designlines
TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.