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nvNITRO is Cool!

CRN names nvNITRO one of 

"10 Coolest Flash Storage

and SSD Products of 2017 (so far)"

July 2017

Learn More

Performance and Reliability for Demanding Automotive Applications

  • AEC-Q100 Qualified
  • ECU High Sample Rates
  • Safety System Data Integrity
See a Case Study

Storage Solutions Achieve Greater Performance with MRAM

  • Microsecond Latency
  • Multi-Gbps Bandwidth
  • Persistent DRAM
See a Case Study

Unlimited Endurance for Industrial Applications

  • Critical and Reliable Data Recovery
  • Instant Status Recovery
  • Deployment Longevity
See a Case Study

Ideal Non-volatility for RAID Applications

  • MRAM used as journal memory
  • High endurance supports continuous writing
  • Instantly recoverable RAID system data
See a Case Study

Everspin Appoints Semiconductor Storage Veteran Kevin Conley as CEO

CHANDLER, Ariz., Aug. 23, 2017 -- Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM), today announced it had named Kevin Conley as its President and Chief Executive Officer effective Sept. 1. Conley succeeds Phill LoPresti as the company moves aggressively to capitalize on Storage Class Memory opportunities with its MRAM technology leadership.

 

Read the full press release

Everspin Announces Second Quarter 2017 Financial Results

Chandler, AZ, August 10, 2017— Everspin Technologies, Inc. (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the company’s second quarter 2017 financial results for the quarter ended June 30, 2017.

 

Read the full press release

Everspin Announces Production Release of 1 and 2 Gigabyte nvNITRO NVMe SSDs

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), the leading provider of MRAM solutions, today announced the production release of its nvNITRO™ line of storage accelerators, designed to deliver extremely fast read and write times with ultra-low latency. Everspin is launching the initial nvNITRO accelerators with 1GB and 2GB capacities, based on 256Mb DDR3 ST-MRAM.  The storage accelerators are orderable today, and will ship in Q417.  The nvNITRO accelerators operate up to 1.5 million IOPS with 6μs end-to-end latency. Everspin is delivering a half-height, half-length (HHHL) PCIe card as well as U.2 form factors; both support NVMe and memory mapped IO (MMIO) access modes.

Read the full press release

Everspin Announces Sampling of the World’s First 1-Gigabit MRAM Product

Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs. 

Read the full press release

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