News Stories and Press Releases

February 9, 2015

Northwest Logic Offers MRAM Controller IP compatible with Everspin’s ST-MRAM

Chandler, AZ, February 9, 2015. Northwest Logic, a leading high-performance IP provider, and Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded Magnetic RAM "MRAM", announces the full interoperability between Northwest Logic's MRAM Controller Core and Everspin Technologies' ST-MRAM devices. This interoperability is hardware proven on a Xilinx Virtex-7 FPGA platform and is now available for designs needing low-latency, high memory throughput using MRAM technology.

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January 26, 2015

Everspin Increases Series B Funding to $29M with Strategic Investments from GLOBALFOUNDRIES and Western Digital Capital

Chandler, AZ, January 26, 2015 - Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that the company has closed its $29 Million (USD) Series B round of venture capital and strategic investment. New Everspin strategic investors include GLOBALFOUNDRIES and Western Digital Capital, joining current investors New Venture Partners, Lux Capital, Sigma Partners, Epic Ventures, and Draper Fisher Jurvetson.

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November 26, 2014

Cobham Semiconductor Solutions Announces QML Q/Q+ Qualification of their MRAMs with IP from Everspin Technologies, Inc.

Cobham Semiconductor Solutions (formerly Aeroflex) announces QML Q/Q+ certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc. The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flat pack with prototypes available now, and a 16Mbit device, UT8MR2M8, available in a 40-lead flat pack and in production.

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November 19, 2014

Chandler's Everspin Tech finds partner for new line of battery-less computer memory

Everspin Technologies Inc. is ready to build its new generation of computer and electronics memory that doesn't need batteries, and it's got a new partner to help it.
The Chandler-based company announced late last month it will work with Santa Clara, California-based GlobalFoundaries to develop silicon wafers for the latest version of its magneto-resistive random access memory.

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October 29, 2014

Magnetic Trends Driving Storage and Future Memory Markets

The introduction of non-volatile memory as main memory in computer systems could fundamentally change computer architectures and the way we use microprocessor-based systems. Current ST MRAM market leader, Everspin, has reached an agreement with GLOBALFOUNDRIES to supply 300 mm CMOS wafers with Everspin's ST-MRAM technology (Everspin says that they have shipped over 40 M MRAM chips).

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October 29, 2014

Everspin signs production agreement with GlobalFoundries, sold over 40 million MRAM chips

Everspin Technologies entered into a partnership with GlobalFoundries to build fully processed 300mm wafers with Everspin's ST-MRAM technology, starting with GF's 28-nm and 40-nm low-power CMOS platforms. As part of the agreement, GlobalFoundries invested an undisclosed amount in Everspin, and they already acquired ST-MRAM processing equipment (40-nm).

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October 27, 2014

Everspin deal with Global Foundries may push MRAM chips to production faster

Everspin has signed up chip maker Global Foundries as a manufacturing partner for its next-generation MRAM (Magnetoresistive RAM) memory chips, in a development that should help the promising technology move toward mass production.

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October 27, 2014

Everspin and Globalfoundries team up on MRAM

Everspin is teaming up with GlobalFoundries to offer MRAM on 40nm and 28nm processes. This is an interesting move considering the last devices we saw from them were on 180nm.

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October 27, 2014

Everspin and GLOBALFOUNDRIES partner to supply fully processed 300mm CMOS wafers with Everspin’s ST-MRAM technology

Chandler, AZ, Oct 27, 2014 - Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that the company has partnered with GLOBALFOUNDRIES to build fully processed 300mm wafers with Everspin's magnetic tunnel junction (MTJ) Spin-Torque Magnetoresistive Random-Access Memory (ST-MRAM) technology, starting with GLOBALFOUNDRIES 40 nanometer and 28 nanometer Low Power CMOS platforms.

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October 16, 2014

Q&A: Everspin Takes MRAM to the Mainstream

In this interview with Electronic Design's Bill Wong, Everspin's Joe O'Hare describes how MRAM will move to the mainstream through commercialization of the company's ST-MRAM storage products, along with plans for a flexible, scalable embedded memory targeting advanced CMOS ASICs and SoCs of the future.

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