News Stories and Press Releases

October 13, 2016

Everspin Technologies Announces Closing of its Initial Public Offering and Private Placement

Chandler, AZ – October 13, 2016 – Everspin Technologies, Inc. today announced the closing of its initial public offering of 5,000,000 shares of its common stock at a public offering price of $8.00 per share, for total gross proceeds of $40 million before the underwriting discount and commissions and other offering expenses.

All of the shares of common stock were offered by Everspin Technologies. The common stock is listed on The NASDAQ Global Market under the ticker symbol "MRAM." In addition, Everspin Technologies has granted the underwriters a 30-day option to purchase up to an additional 750,000 shares of common stock to cover over-allotments at the initial public offering price, less the underwriting discount and commissions.

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September 16, 2016

GF Debuts 7nm, Embedded MRAM

by Rick Merritt, EE Times

SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.

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September 16, 2016

MRAM Is Becoming Mainstream Memory

by Tom Coughlin, Forbes

Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.

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September 16, 2016

Global Foundries to Introduce Everspin eMRAM with FD-SOI Chips

Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark

…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.

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September 15, 2016

Everspin’s ST-MRAM Technology to be deployed in GLOBALFOUNDRIES 22FDX eMRAM Platform

Everspin’s ST-MRAM with pMTJ will be available as discrete memory manufactured by GLOBALFOUNDRIES and as embedded memory under license to GLOBALFOUNDRIES.

Chandler, AZ, September 15, 2016 — Everspin Technologies, Inc., has announced that its most advanced ST-MRAM technology will be available as an embedded memory through its relationship with GLOBALFOUNDRIES. With the GLOBALFOUNDRIES announcement of 22FDX eMRAM based on Everspin’s ST-MRAM technology, customers will have access to memory that offers the benefit of working memory (SRAM) combined with code storage (Flash), enabling system designers to take advantage of our latest NVM memory technology.

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September 15, 2016

GLOBALFOUNDRIES Launches Embedded MRAM on 22FDX® Platform

High-performance embedded non-volatile memory solution is ideally suited for emerging applications in advanced IoT and automotive

Santa Clara, Calif., September 15, 2016 – GLOBALFOUNDRIES today introduced a scalable, embedded magnetoresistive non-volatile memory technology (eMRAM) on its 22FDX platform, providing system designers with access to 1,000x faster write speeds and 1,000x more endurance than today’s non-volatile memory (NVM) offerings. 22FDX eMRAM also features the ability to retain data through 260°C solder reflow, industrial temperature operation, while maintaining an industry-leading eMRAM bitcell size.

September 10, 2016

Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM

Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016

Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.  

Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.

Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology


August 9, 2016

Aupera Reveals an MRAM-enabled M.2 Storage Module based on Everspin’s newest 256Mb Perpendicular Spin Torque MRAM

The Aup-AXL-M128 offers a high speed, low latency storage tier for Flash Arrays

Chandler, AZ, August 9, 2016 – Everspin Technologies and Aupera Technologies Inc., today announced the launch of the world’s first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM.  Aupera’s Aup-AXL-M128 is currently used in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance.

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August 5, 2016

Everspin to show world's fastest SSD

by Robin Harris for Storage Bits, August 4, 2016

Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.

At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.

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August 3, 2016

Everspin 256Mb ST-MRAM with Perpendicular MTJ Sampling

Everspin 256Mb ST-MRAM with Perpendicular MTJ Now Sampling

Chandler, AZ, August 3, 2016.  Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.

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