Press Archive for 2014
October 27, 2014
Everspin and GLOBALFOUNDRIES partner to supply fully processed 300mm CMOS wafers with Everspin’s ST-MRAM technology
Chandler, AZ, Oct 27, 2014 - Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that the company has partnered with GLOBALFOUNDRIES to build fully processed 300mm wafers with Everspin's magnetic tunnel junction (MTJ) Spin-Torque Magnetoresistive Random-Access Memory (ST-MRAM) technology, starting with GLOBALFOUNDRIES 40 nanometer and 28 nanometer Low Power CMOS platforms.
August 4, 2014
Everspin Technologies will demonstrate the first commercially-available Spin Torque MRAM (ST-MRAM) at the Flash Memory Summit, Aug 5-7, 2014 in Santa Clara, in the Altera booth #621 and in the Mobiveil booth #721.