May 1, 2018
NEWARK, Calif., May 01, 2018 (GLOBE NEWSWIRE) -- SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., (NASDAQ:SGH), and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products, today announced that it has begun shipping its nvNITRO Accelerator Card featuring MRAM technology. SMART has partnered with Everspin Technologies, Inc. (NASDAQ:MRAM), the world's leading developer and manufacturer of discrete and embedded magnetoresistive random access memory (MRAM), to launch the new Spin-transfer Torque MRAM (STT-MRAM)-based nvNITRO Accelerator Card. The nvNITRO is ideally suited for the most demanding transaction logging applications and, along with enhanced performance features, is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.
March 6, 2018
Location: 5670 W. Chandler Blvd., Suite 100, Chandler, AZ 85226
CEO: Kevin Conley
Company Description: Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-Torque MRAM (ST-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount.
March 5, 2018
An ultra-low power MCU reference design from eVaderis is taking advantage of Globalfoundries’ embedded magnetoresistive non-volatile memory (eMRAM) technology.
January 25, 2018
There are many memory technologies competing with flash. Find out what the options are and how they work.
As opposed to the FRAM, an MRAM actually does use magnetism to store bits. This makes some people worry that bits will be disturbed by external magnetic fields, but these bits are flipped by energy that is applied in very close proximity to the magnet, so the local field is extraordinarily dense compared to most externally applied fields. In other words, although you could cause bits to by applying an external magnetic field, that field would need to be extremely strong, so it would take a big effort to cause any trouble.
January 24, 2018
EverSpin said that it had begun 40 nm perpendicular Magnetic Tunnel Junction (MTJ) STT-MRAM 256Mb chip production in Q4 2017 and will be scaling into volume production in 2018. The company says that this advance is an enabling step to bring MRAM to more markets since this is the first MTJ STT-MRAM entering mass production. EverSpin provides single chip MRAM solutions, while its production partner, Global Foundries, is putting this technology into embedded applications. The 256MB STT-MRAM solutions employs an ST-DDR3 interface. EverSpin says that it has shipped over 70 million MRAM chips so far for data centers, cloud storage, energy, industrial, automotive and transportation markets.
January 22, 2018
TORONTO — Consistent challenge with emerging memories: the volume must go up for the price to come down, and the price has to come down for the volume to go up. Everspin Technologies is hoping, however, that specific industries will favor value over price-per-bit as it ramps up production of its MRAM.
January 21, 2018
Everspin Technologies, developer and manufacturer of discrete and embedded MRAM, announced this week its recorded revenue for its first 40nm 256Mb STT-MRAM products in the fourth quarter of 2017, and is in the process of ramping its volume production in 2018. This achievement represents an important milestone for STT-MRAM as it is the enabling step for bringing the persistent memory to market.
January 8, 2018
Over the past 60 years, semiconductor chips have become smaller, cheaper, and more powerful, and their proliferation has enabled the ubiquitous computing we enjoy today. Intel founder Gordon Moore suggested in 1965 that improvements in manufacturing techniques would allow overall processing power for computers to double approximately every two years as the number of transistors on each integrated circuit doubled, an observation that became known as Moore's Law.
September 14, 2017
Everspin Technologies is close to completing its first move into solid-state drives. Everspin recently started taking orders for solid-state drives (SSDs) that use spin-torque magnetoresistive random access memory (ST-MRAM) technology. The nvNITRO Storage Accelerator SSDs can deliver ultrafast performance far in excess of NAND flash and approaching DRAM's speed.
September 13, 2017
MRAMs gelten als zuverlässige Speicher zum Aufzeichnen und Schützen kritischer Systemdaten. Durch fortschrittliche Technologie ist nun MRAM-Speicher möglich, der sich wie nicht-flüchtiges DRAM verhält.