May 22, 2020
This week, Chris and Martin dig deeper into storage media and look at magneto-resistive RAM, commonly known as MRAM in this conversation with Joe O’Hare, Director of Distribution and Product Marketing at Everspin Technologies.
MRAM is a persistent memory technology that uses resistance to determine the state of data. Everspin, the leading provider of MRAM technologies offers two product types – Toggle and Spin Transfer Torque. These two solutions provide different characteristics of endurance and scaling, but both offer low latency reads and writes at around 35 nanoseconds.
March 13, 2020
Electronic Design’s Bill Wong discusses MRAM, a future universal memory, with Everspin President and CEO Kevin Conley.
Magnetoresistive RAM (MRAM) continues to make strides, finding more uses as capacity and performance have increased. The long-term goal is a universal, nonvolatile memory. It has a growing partner ecosystem including support by the major fabs.
November 12, 2018
SMART Modular Launches nvNITRO NVMe Storage Accelerator Featuring MRAM Technology in New U.2 Form Factor
SMART Modular Technologies, Inc., has partnered with Everspin Technologies, Inc., to enable the launch of the new Spin-Transfer Torque MRAM (STT-MRAM)-based nvNITRO Storage Accelerator. The nvNITRO is ideally suited for synchronous logging applications such as those used for financial trading.
August 7, 2018
What just happened? IBM is turning to magnetoresistive random access memory (MRAM) write caches for its next generation of FlashSystem storage devices, moving away from traditional capacitor-backed DRAM.
August 7, 2018
Niche technologies like MRAM (magnetoresistive random access memory) have lived on the fringes of the mainstream memory business for decades. They tend to offer fringe benefits that make them attractive for certain, specific applications but are typically stuck with baggage that prevents them from addressing a wider space. A new announcement from IBM suggests MRAM could be moving into larger markets with more customers, courtesy of a new agreement with Everspin.
May 1, 2018
NEWARK, Calif., May 01, 2018 (GLOBE NEWSWIRE) -- SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., (NASDAQ:SGH), and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products, today announced that it has begun shipping its nvNITRO Accelerator Card featuring MRAM technology. SMART has partnered with Everspin Technologies, Inc. (NASDAQ:MRAM), the world's leading developer and manufacturer of discrete and embedded magnetoresistive random access memory (MRAM), to launch the new Spin-transfer Torque MRAM (STT-MRAM)-based nvNITRO Accelerator Card. The nvNITRO is ideally suited for the most demanding transaction logging applications and, along with enhanced performance features, is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.
March 6, 2018
Location: 5670 W. Chandler Blvd., Suite 100, Chandler, AZ 85226
CEO: Kevin Conley
Company Description: Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-Torque MRAM (ST-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount.
March 5, 2018
An ultra-low power MCU reference design from eVaderis is taking advantage of Globalfoundries’ embedded magnetoresistive non-volatile memory (eMRAM) technology.
January 25, 2018
There are many memory technologies competing with flash. Find out what the options are and how they work.
As opposed to the FRAM, an MRAM actually does use magnetism to store bits. This makes some people worry that bits will be disturbed by external magnetic fields, but these bits are flipped by energy that is applied in very close proximity to the magnet, so the local field is extraordinarily dense compared to most externally applied fields. In other words, although you could cause bits to by applying an external magnetic field, that field would need to be extremely strong, so it would take a big effort to cause any trouble.
January 24, 2018
EverSpin said that it had begun 40 nm perpendicular Magnetic Tunnel Junction (MTJ) STT-MRAM 256Mb chip production in Q4 2017 and will be scaling into volume production in 2018. The company says that this advance is an enabling step to bring MRAM to more markets since this is the first MTJ STT-MRAM entering mass production. EverSpin provides single chip MRAM solutions, while its production partner, Global Foundries, is putting this technology into embedded applications. The 256MB STT-MRAM solutions employs an ST-DDR3 interface. EverSpin says that it has shipped over 70 million MRAM chips so far for data centers, cloud storage, energy, industrial, automotive and transportation markets.