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Field-programmable gate arrays (FGPAs) are finding their way into many different applications as 5G technology, and other LPWAN connectivity solutions roll out.  Automotive, IoT operations, and 5G edge applications are implementing FPGA chips due to their fast time-to-market and their ability to be reprogrammed. In many cases, the FPGA is installed in applications where frequent system updates are needed. Often these bitstream updates are made over the air (OTA. An FPGA with a magnetoresistive random-access memory (MRAM) can simplify the software associated with the management process of updating new bitstreams into memory. System designers can take advantage of MRAM’s faster write capabilities which can lead to lower energy usage. New MRAM developments are underway to combine the unique benefits of MRAM and FPGA.

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Everspin says that the new EMxxLX family offers the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface.

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An interview with Kevin Conley, President and CEO of Everspin Technologies by the Wall Street Transcript.

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This week, Chris and Martin dig deeper into storage media and look at magneto-resistive RAM, commonly known as MRAM in this conversation with Joe O’Hare, Director of Distribution and Product Marketing at Everspin Technologies. 

MRAM is a persistent memory technology that uses resistance to determine the state of data. Everspin, the leading provider of MRAM technologies offers two product types – Toggle and Spin Transfer Torque. These two solutions provide different characteristics of endurance and scaling, but both offer low latency reads and writes at around 35 nanoseconds.

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Electronic Design’s Bill Wong discusses MRAM, a future universal memory, with Everspin President and CEO Kevin Conley.

Magnetoresistive RAM (MRAM) continues to make strides, finding more uses as capacity and performance have increased. The long-term goal is a universal, nonvolatile memory. It has a growing partner ecosystem including support by the major fabs.

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SMART Modular Technologies, Inc., has partnered with Everspin Technologies, Inc., to enable the launch of the new Spin-Transfer Torque MRAM (STT-MRAM)-based nvNITRO Storage Accelerator. The nvNITRO is ideally suited for synchronous logging applications such as those used for financial trading. 

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Niche technologies like MRAM (magnetoresistive random access memory) have lived on the fringes of the mainstream memory business for decades. They tend to offer fringe benefits that make them attractive for certain, specific applications but are typically stuck with baggage that prevents them from addressing a wider space. A new announcement from IBM suggests MRAM could be moving into larger markets with more customers, courtesy of a new agreement with Everspin.

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What just happened? IBM is turning to magnetoresistive random access memory (MRAM) write caches for its next generation of FlashSystem storage devices, moving away from traditional capacitor-backed DRAM.

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NEWARK, Calif., May 01, 2018 (GLOBE NEWSWIRE) -- SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., (NASDAQ:SGH), and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products, today announced that it has begun shipping its nvNITRO Accelerator Card featuring MRAM technology. SMART has partnered with Everspin Technologies, Inc. (NASDAQ:MRAM), the world's leading developer and manufacturer of discrete and embedded magnetoresistive random access memory (MRAM), to launch the new Spin-transfer Torque MRAM (STT-MRAM)-based nvNITRO Accelerator Card. The nvNITRO is ideally suited for the most demanding transaction logging applications and, along with enhanced performance features, is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.

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EVERSPIN TECHNOLOGIES

Score: 57.6
Location: 5670 W. Chandler Blvd., Suite 100, Chandler, AZ 85226
CEO: Kevin Conley

Company Description: Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-Torque MRAM (ST-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount.

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