News Stories and Press Releases
May 22, 2017
In the world of computer chips, all glory goes to the microprocessor, and especially to the kind that Intel sells, which serves as the brains of your personal computer.
But there are many other kinds of chips in the universe of semiconductors, some increasingly more important.
This magazine argued in a 2015 cover story that memory...
May 22, 2017
Chandler, AZ, May 22, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will participate in two investor conferences in June:
- Stifel 2017 Technology, Internet & Media Conference in San Francisco on June 5
- Needham’s Inaugural Automotive Tech Day in New York City on June 6
May 12, 2017
Chandler, AZ, May 12, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its first quarter ended March 31, 2017.
May 4, 2017
Chandler, AZ, May 04, 2017 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced the appointment of Annie Flaig as Senior Vice President of Worldwide Sales. Flaig will be responsible for day-to-day operations for all aspects of direct and indirect sales, as well as overseeing Everspin’s channel ecosystem. She will lead the efforts to increase revenue and expand market activities, as well as contribute to the marketing and business strategy for Everspin products.
March 29, 2017
Chandler, AZ, March 29, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced that Kevin Conley, former CTO of SanDisk, Corp., and Mike Gustafson, former Chairman and CEO of Virident Systems, have been elected to Everspin’s Board of Directors. Bob England, who has served on Everspin’s board since July 2009, will be retiring in May 2017.
March 27, 2017
Beginning in the late 1960s you could bet that every 18 to 24 months the number of transistors on a semiconductor would double while its cost fell 50%. Now that predictable pattern -- dubbed Moore's Law -- is no more.
Does that mean the companies that used to follow Moore's Law -- such as Intel, Qualcomm, and Western Digital (I have no financial interest in the companies mentioned in this post) -- are fated to a future of mediocrity? Or can they build or buy their way to faster growth?
March 13, 2017
Everspin has a fairly robust market for its first-generation products—the company also announced that JAG Jakob, which makes process control systems for pharmaceuticals and biotech facilities, is using its 16Mb MRAM. However, the market for the higher density ST-MRAM devices is still evolving.
“There is always some type of market adoption rate for new technology,” said Joe O’Hare, Everspin’s director of product marketing. “But we’ve been making very good progress here.”
March 10, 2017
Everspin has shipped over 60 million MRAM chips in the last eight years. So why haven't you heard of them?
MRAM is a different type of nonvolatile memory, with unlimited durability, good speed - 35nsec reads and writes - 20+ years of data durability, lower power consumption than flash, byte addressability, and the ability to endure extreme temperatures. It also costs much more than flash. As such it has found a ready market in embedded systems where reliability and ruggedness are paramount, like automotive, military and industrial applications.
March 10, 2017
Non-volatile memory outfit Everspin's popped some of its Spin Torque MRAM onto a PCIe card in the hope system builders get excited about a new tier of memory. Or is it a new tier of storage?
The first of the new “nvNITRO E” range will be a half-height, half-length PCIe card that can operate as an NVMe solid state disk, or as memory mapped IO (MMIO).
March 9, 2017
Everspin unveils a new low latency, PCIe NVMe card based on Spin Torque MRAM
Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced its nvNITRO™ line of storage accelerators which delivers extremely fast read and write times with ultra-low latency. Everspin is introducing initial capacities of 1 Gigabyte and 2 Gigabyte of Spin Torque MRAM today, based on its 256Mb DDR3 ST-MRAM.
Capacities from 4 Gigabyte up to 16 Gigabytes will be available later in this year utilizing Everspin’s 1 Gigabit DDR4 ST-MRAM. The nvNITRO™ ES1GB and ES2GB operate at a blazing 1,500,000 IOPS with 6 microsecond end-to-end latency. They are offered in a half-height, half-length (HHHL) PCIe card with two access modes: NVMe SSD and memory mapped IO (MMIO).