Press Archive for 2016

December 15, 2016

Everspin to Participate in 19th Annual Needham Growth Conference on January 11

Chandler, AZ, December 15, 2016 — Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced that the company will participate in the 19th Annual Needham Growth Conference on Wednesday, January 11 in New York City. Webcast information for the company’s January 11 presentation at 11:20 am ET is available on the Investor Relations section of Everspin’s website at www.investor.everspin.com.

About Everspin Technologies

Everspin Technologies is the leading provider of MRAM solutions. Everspin’s MRAM solutions offer the persistence of non-volatile memory with the speed and endurance of random access memory (RAM), and enable the protection of mission critical data particularly in the event of power interruption or failure. Everspin’s MRAM solutions allow its customers in the industrial, automotive and transportation, and enterprise storage markets to design high performance, power efficient and reliable systems without the need for bulky batteries or capacitors. Everspin is the only provider of commercially available MRAM solutions and over the past eight years has shipped over 60 million MRAM units. For more information, visit www.everspin.com.

November 14, 2016

Everspin Announces Third Quarter 2016 Financial Results

CHANDLER, Ariz., Nov. 14, 2016 (GLOBE NEWSWIRE) -- Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its third quarter ended September 30, 2016. Revenue for the third quarter of 2016 was $7.1 million, compared to $7.0 million for the third quarter of 2015. Everspin's net loss for the third quarter of 2016 was $1.4 million, or $0.54 per share, compared to a net loss of $4.5 million, or $1.77 per share for the third quarter of 2015.

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November 8, 2016

Everspin Previews Upcoming Products at Electronica

Everspin displays both the 1Gb DDR4 Perpendicular ST-MRAM device and a 1GByte DDR3 Memory Module (DIMM) at Stand A3-545

Chandler, AZ, November 8, 2016 — Everspin Technologies, Inc., as the leading provider of MRAM solutions, today announced that it will display the industry’s first 1Gb ST- MRAM designed with its perpendicular magnetic tunnel junction ( pMTJ) which is being processed by GlobalFoundries. Visitors can see the MRAM 300mm wafer at Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.

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November 7, 2016

Everspin Exhibiting MRAM Solutions at Electronica 2016

Everspin will display a range of customer solutions and technologies at Electronica 2016.

Chandler, AZ, November 7, 2016 — Everspin Technologies, Inc., (MRAM) the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that it will showcase a range of MRAM solutions in Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.

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November 3, 2016

Everspin to Announce Fiscal Third Quarter 2016 Results on November 14

CHANDLER, Ariz., – November 3, 2016 – Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetic RAM "MRAM", today announced that the company will report results for its fiscal third quarter which ended September 30, 2016 after the market closes on November 14, 2016 and will host a conference call to discuss its financial results at 5 pm Eastern Time on the same day.

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October 13, 2016

Everspin Technologies Announces Closing of its Initial Public Offering and Private Placement

Chandler, AZ – October 13, 2016 – Everspin Technologies, Inc. today announced the closing of its initial public offering of 5,000,000 shares of its common stock at a public offering price of $8.00 per share, for total gross proceeds of $40 million before the underwriting discount and commissions and other offering expenses.

All of the shares of common stock were offered by Everspin Technologies. The common stock is listed on The NASDAQ Global Market under the ticker symbol "MRAM." In addition, Everspin Technologies has granted the underwriters a 30-day option to purchase up to an additional 750,000 shares of common stock to cover over-allotments at the initial public offering price, less the underwriting discount and commissions.

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September 15, 2016

GLOBALFOUNDRIES Launches Embedded MRAM on 22FDX® Platform

High-performance embedded non-volatile memory solution is ideally suited for emerging applications in advanced IoT and automotive

Santa Clara, Calif., September 15, 2016 – GLOBALFOUNDRIES today introduced a scalable, embedded magnetoresistive non-volatile memory technology (eMRAM) on its 22FDX platform, providing system designers with access to 1,000x faster write speeds and 1,000x more endurance than today’s non-volatile memory (NVM) offerings. 22FDX eMRAM also features the ability to retain data through 260°C solder reflow, industrial temperature operation, while maintaining an industry-leading eMRAM bitcell size.
 

September 15, 2016

Everspin’s ST-MRAM Technology to be deployed in GLOBALFOUNDRIES 22FDX eMRAM Platform

Everspin’s ST-MRAM with pMTJ will be available as discrete memory manufactured by GLOBALFOUNDRIES and as embedded memory under license to GLOBALFOUNDRIES.

Chandler, AZ, September 15, 2016 — Everspin Technologies, Inc., has announced that its most advanced ST-MRAM technology will be available as an embedded memory through its relationship with GLOBALFOUNDRIES. With the GLOBALFOUNDRIES announcement of 22FDX eMRAM based on Everspin’s ST-MRAM technology, customers will have access to memory that offers the benefit of working memory (SRAM) combined with code storage (Flash), enabling system designers to take advantage of our latest NVM memory technology.

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August 9, 2016

Aupera Reveals an MRAM-enabled M.2 Storage Module based on Everspin’s newest 256Mb Perpendicular Spin Torque MRAM

The Aup-AXL-M128 offers a high speed, low latency storage tier for Flash Arrays

Chandler, AZ, August 9, 2016 – Everspin Technologies and Aupera Technologies Inc., today announced the launch of the world’s first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM.  Aupera’s Aup-AXL-M128 is currently used in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance.

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August 3, 2016

Everspin 256Mb ST-MRAM with Perpendicular MTJ Sampling

Everspin 256Mb ST-MRAM with Perpendicular MTJ Now Sampling

Chandler, AZ, August 3, 2016.  Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.

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