Press Archive for 2016
December 15, 2016
About Everspin Technologies
November 14, 2016
CHANDLER, Ariz., Nov. 14, 2016 (GLOBE NEWSWIRE) -- Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its third quarter ended September 30, 2016. Revenue for the third quarter of 2016 was $7.1 million, compared to $7.0 million for the third quarter of 2015. Everspin's net loss for the third quarter of 2016 was $1.4 million, or $0.54 per share, compared to a net loss of $4.5 million, or $1.77 per share for the third quarter of 2015.
November 8, 2016
Everspin displays both the 1Gb DDR4 Perpendicular ST-MRAM device and a 1GByte DDR3 Memory Module (DIMM) at Stand A3-545
Chandler, AZ, November 8, 2016 — Everspin Technologies, Inc., as the leading provider of MRAM solutions, today announced that it will display the industry’s first 1Gb ST- MRAM designed with its perpendicular magnetic tunnel junction ( pMTJ) which is being processed by GlobalFoundries. Visitors can see the MRAM 300mm wafer at Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.
November 7, 2016
Everspin will display a range of customer solutions and technologies at Electronica 2016.
Chandler, AZ, November 7, 2016 — Everspin Technologies, Inc., (MRAM) the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that it will showcase a range of MRAM solutions in Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.
November 3, 2016
CHANDLER, Ariz., – November 3, 2016 – Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetic RAM "MRAM", today announced that the company will report results for its fiscal third quarter which ended September 30, 2016 after the market closes on November 14, 2016 and will host a conference call to discuss its financial results at 5 pm Eastern Time on the same day.
October 13, 2016
Chandler, AZ – October 13, 2016 – Everspin Technologies, Inc. today announced the closing of its initial public offering of 5,000,000 shares of its common stock at a public offering price of $8.00 per share, for total gross proceeds of $40 million before the underwriting discount and commissions and other offering expenses.
All of the shares of common stock were offered by Everspin Technologies. The common stock is listed on The NASDAQ Global Market under the ticker symbol "MRAM." In addition, Everspin Technologies has granted the underwriters a 30-day option to purchase up to an additional 750,000 shares of common stock to cover over-allotments at the initial public offering price, less the underwriting discount and commissions.
September 15, 2016
Everspin’s ST-MRAM with pMTJ will be available as discrete memory manufactured by GLOBALFOUNDRIES and as embedded memory under license to GLOBALFOUNDRIES.
Chandler, AZ, September 15, 2016 — Everspin Technologies, Inc., has announced that its most advanced ST-MRAM technology will be available as an embedded memory through its relationship with GLOBALFOUNDRIES. With the GLOBALFOUNDRIES announcement of 22FDX eMRAM based on Everspin’s ST-MRAM technology, customers will have access to memory that offers the benefit of working memory (SRAM) combined with code storage (Flash), enabling system designers to take advantage of our latest NVM memory technology.
September 15, 2016
High-performance embedded non-volatile memory solution is ideally suited for emerging applications in advanced IoT and automotive
August 9, 2016
Aupera Reveals an MRAM-enabled M.2 Storage Module based on Everspin’s newest 256Mb Perpendicular Spin Torque MRAM
The Aup-AXL-M128 offers a high speed, low latency storage tier for Flash Arrays
Chandler, AZ, August 9, 2016 – Everspin Technologies and Aupera Technologies Inc., today announced the launch of the world’s first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. Aupera’s Aup-AXL-M128 is currently used in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance.
August 3, 2016
Everspin 256Mb ST-MRAM with Perpendicular MTJ Now Sampling
Chandler, AZ, August 3, 2016. Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.