Press

Veteran semiconductor executive to lead global sales and product marketing

CHANDLER, Ariz. – Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of magnetoresistive random access memory (MRAM), announced today the appointment of Sean Dougherty as Vice President of Sales, effective immediately.

Dougherty brings over two decades of experience in the semiconductor industry, spanning engineering, customer enablement, and global sales leadership roles. Most recently, he served as Chief Revenue Officer of Intel's Altera division, where he led global revenue-generating functions including sales, field applications engineering, and business management. Before that, he led Altera's Worldwide Technical Customer Enablement organization, overseeing technical sales and support teams globally. In his role at Everspin, Dougherty will lead the company’s sales strategy and growth, provide leadership to its sales and marketing team to secure new business while ensuring customer satisfaction.

Earlier in his career, Dougherty held engineering leadership roles in the communications sector, managing teams focused on ASIC, FPGA, and system design for high-volume commercial deployments. He has a Bachelor of Science in Computer Engineering from the Wentworth Institute of Technology in Boston.

David Schrenk, who has been the VP of Sales and Business Development for the last three years, will now focus his efforts exclusively on Business Development. Schrenk successfully navigated Everspin to a path of revenue growth while developing strategic partnerships, which has turned into a personal objective and passion for him.

"We have reached a point in our journey where both sales execution and strategic partnerships require distinct and dedicated leadership,” said Sanjeev Aggarwal, President and CEO of Everspin.  “This structural change reflects our ambition to accelerate both direct revenue monetization and strategic expansion, allowing us to better serve our customers and unlock new opportunities. Sean brings a combination of engineering depth and customer-first sales leadership, and his track record of building high-performing teams and scaling revenue aligns perfectly with our next phase of growth across new and existing markets."

"Everspin's MRAM solutions are solving data persistence and power challenges across industries," said Dougherty. "I'm excited to help expand that reach through deeper technical engagement, strong global partnerships and continued delivery of differentiated memory solutions."

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New PERSYST EM064LX and EM128LX HR STT-MRAM Expanding Use in Aerospace, Automotive, and Industrial Applications Unveiled at Embedded World 2025

CHANDLER, Ariz.--(BUSINESS WIRE)—March 10,2025--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced its latest high-reliability MRAM expansion. The newest additions to the PERSYST EMxxLX family, the EM064LX HR and EM128LX HR, will operate at temperatures from -40°C to +125°C, meeting the AEC-Q100 Grade 1 standard for automotive applications. This expanded temperature range addresses the growing demand for persistent, high-speed memory in aerospace, defense, and extreme industrial environments.

"As embedded systems continue to push the boundaries of reliability and endurance, memory technology must keep pace with extreme operating environments," said Sanjeev Aggarwal, President and CEO at Everspin Technologies. "Our latest high-reliability PERSYST MRAM provides designers with a robust, fast, and scalable alternative to Static RAM or NOR flash, ensuring mission success in automotive, aerospace, and industrial applications."

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Everspin’s AgILYST MRAM IP and manufacturing to support Purdue University’s Applied Research Institute ME Commons grant initiative

CHANDLER, Ariz.—March, 6 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, announced a strategic award to work with a consortium led by Purdue University to utilize Everspin MRAM as the underpinning in a program called CHEETA (CMOS+MRAM Hardware for Energy Efficient AI). The contract allows for phases totaling up to $10.5 million for Everspin Technologies over four years. The current phase with Everspin Technologies is valued at approximately $4 million.

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Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families

CHANDLER, Ariz.--(BUSINESS WIRE) –Feb 18, 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field Programmable Gate Arrays (FPGA). Enabled through the Lattice Radiant™ software suite, this validation highlights MRAM's role as a robust and reliable configuration memory device for a wide range of applications in industries such as industrial, aerospace, military, and automotive.

The shift from traditional flash memory to MRAM in FPGA configuration reflects the growing demands of modern applications. Unlike NOR flash, which requires long program and erase time, MRAM offers high endurance, fast read/write speeds, and exceptional data retention. These attributes make MRAM particularly suited for mission-critical environments, including real-time sensor processing, data logging in avionics, and in-orbit reprogramming for space systems. Customers are already taking advantage of the MRAM support in their designs that utilize Lattice’s FPGA.

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Everspin Technologies, Inc. announced a strategic award to develop a long-term plan to provide manufacturing services for aerospace and defense segments. Under the award, Everspin will provide a plan to mitigate risks to its MRAM manufacturing supply chain.

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Everspin announced a new strategic contract with Frontgrade Technologies. Under the contract, Everspin will provide its innovative PERSYST MRAM technology, logic design, and back-end-of-line manufacturing services to advance the development and demonstration of a Strategic Radiation Hardened (SRH) high-reliability eMRAM macro for use in future products by Frontgrade.

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Everspin announced a new strategic contract with QuickLogic Corporation. This project builds upon over 12 years of Everspin’s experience in delivering MRAM IP for strategic radiation hardened and space applications.”
Under the contract, Everspin will provide its innovative AgILYST MRAM technology, logic design, and back end of line manufacturing services to advance the development and demonstration of a Strategic Radiation Hardened (SRH) high-reliability Field Programmable Gate Array (FPGA) technology.

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Ernst & Young LLP announced that President and CEO Sanjeev Aggarwal of Everspin Technologies was named an Entrepreneur Of The Year® 2024 Pacific Southwest Award finalist. Now in its 38th year, Entrepreneur Of The Year is the preeminent competitive business award for audacious leaders who disrupt markets, revolutionize sectors and have a transformational impact on lives. Over the past four decades, the program has recognized the daring entrepreneurs with big ideas and bold actions that reshape our world.
Aggarwal was selected as a finalist by an independent panel of judges. The candidates were evaluated based on their demonstration of building long-term value through entrepreneurial spirit, purpose, growth and impact, among other core contributions and attributes.

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Everspin’s PERSYST MRAM Validated for Configuration Across All Lattice Semiconductor FPGA Families

CHANDLER, Ariz.--(BUSINESS WIRE) –Feb 18, 2025-- Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions, today announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field Programmable Gate Arrays (FPGA). Enabled through the Lattice Radiant™ software suite, this validation highlights MRAM's role as a robust and reliable configuration memory device for a wide range of applications in industries such as industrial, aerospace, military, and automotive.

The shift from traditional flash memory to MRAM in FPGA configuration reflects the growing demands of modern applications. Unlike NOR flash, which requires long program and erase time, MRAM offers high endurance, fast read/write speeds, and exceptional data retention. These attributes make MRAM particularly suited for mission-critical environments, including real-time sensor processing, data logging in avionics, and in-orbit reprogramming for space systems. Customers are already taking advantage of the MRAM support in their designs that utilize Lattice’s FPGA.

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Everspin Technologies announced today that it is expanding its flagship industrial, high-density STT-MRAM product family, the EMxxLX. The EMxxLX product, announced last year, is the highest-performing persistent memory available today. The product family is now equipped with a new 4Mb Capacity point , Smaller Footprint Package, and Extended Industrial Temperature Range of 105⁰C. Sanjeev Aggarwal, president, and CEO of Everspin Technologies, emphasized: "We are proud to announce the expansion of our EMxxLX MRAM product line, now featuring not only SRAM-like performance with low latency and the ability to maintain memory without requiring power but also an extended temperature range to cater to diverse environmental demands. With the addition of a 4Mb capacity option, our MRAM devices provide even more options to select the optimal density solutions. They continue to deliver extremely high endurance, remain compatible with other memory types, and offer ease of integration into customers’ designs."

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