News Archive for 2016
December 4, 2016
62nd International Electron Devices Meeting (IEDM), San Francisco
December 3-7, 2016
Everspin Technologies, jointly with GlobalFoundries, will present an invited paper titled: “Technology for Reliable Spin-Torque MRAM Products”
Speaking for Everspin, Jon Slaughter, Ph.D., Vice President, Technology Research and Development at Everspin Technologies states, “… we will present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.”
October 27, 2016
Making Unforgettable MRAM Memory with OpenPOWER
By Adam McPadden, Lead Engineer, Burlington Systems Lab, IBM
One of the key tenets of the OpenPOWER Foundation’s collaborative model is that having open systems and published interfaces allows people to create innovative architectures at all different areas of the system, including ones where there hasn’t been much change in decades like memory.
In validation of this approach, OpenPOWER members IBM, and Everspin have demonstrated a new way for OpenPOWER members to improve application performance with STT-MRAM on the memory bus of a POWER8 server.
September 16, 2016
GF Debuts 7nm, Embedded MRAM
by Rick Merritt, EE Times
SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.
September 16, 2016
MRAM Is Becoming Mainstream Memory
by Tom Coughlin, Forbes
Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.
September 16, 2016
Global Foundries to Introduce Everspin eMRAM with FD-SOI Chips
Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark
…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.
September 10, 2016
Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM
Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016
Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.
Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.
Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology
August 5, 2016
Everspin to show world's fastest SSD
by Robin Harris for Storage Bits, August 4, 2016
Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.
At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.
May 12, 2016
Everspin Aims MRAM at SSD Storage Tiers
TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
The company recently announced it is shipping 256Mb spin torque technology (ST-MRAM) samples, now the highest commercial density on the market, aimed at applications requiring persistent memory in storage devices and servers using DDR3 and DDR4 interfaces.
May 12, 2016
Everspin's MRAM shoots for the NVM crown
By Robin Harris for Storage Bits
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.