News Archive for 2015
December 7, 2015
ARM Sizes Up Moore's Law – Views MRAM positively for future scaling
Rick Merrit, Silicon Valley Bureau Chief for EE Times, reports on the keynote by Greg Yeric of ARM Research at the annual International Electron Devices Meeting (IEDM) in Washington D.C.
Acording to Yeric, "The physical nature of resistive RAM and Phase Change Memory will most likely limit both density and endurance to below requirements for main memory,” he wrote. “If MRAM power and cost improve, its superior endurance makes it a potential candidate to enable memory as compute..."
November 6, 2015
Artesyn announces VME single board computer based on Freescale processor
By Pradeep Chakraborty, Control Engineering Asia.
Artesyn Embedded Technologies announced a new high performance VME single board computer, the MVME8105, to provide more computing performance, data throughput and long life cycle support for a range of high end industrial control, C4ISR and mission critical applications.
Featuring the Freescale QorIQ P5020 2.0 GHz processor, the MVME8105 provides 4 GB soldered DDR3-1333 MHz ECC memory, 512 K MRAM non-volatile memory and 8 GB eMMC NAND Flash. It offers multiple USB, Serial and Ethernet ports and supports a range of operating systems including Wind River VxWorks, Linux and Green Hills Integrity.
September 18, 2015
Inside The MRAM
Mark Lapedus from Semiconductor Engineering interviews Everspin's president and CEO, Phillip LoPresti
Today, the industry is shipping various next-generation memory types, such as 3D NAND, MRAM and ReRAM. In fact, MRAM has been shipping for some time. To get a handle on MRAM, Semiconductor Engineering sat down to discuss the technology with Phillip LoPresti, president and chief executive of Everspin, a supplier of MRAMs.
September 16, 2015
Memory Hierarchy Shakeup
Semiconductor Engineering, by Mark Lapedus.
Gaps in the memory hierarchy have created openings for new types of memory, and there is no shortage of possibilities.
The next big thing is a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). STT-MRAM is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction (MTJ) can be modified using a spin-polarized current.
August 24, 2015
MRAM Hits Flash Arrays in M.2 Module
TORONTO — Everspin Technologies Inc. (Chandler, Ariz.) built its business as a magnetoresistive RAM (MRAM) company through industrial and automotive applications, but it’s always been looking at broader applications for both its MRAM and Spin-Torque MRAM (ST-MRAM), particularly for applications that require data persistence and integrity, low latency, and security.
Now its MRAM has found its way into the M.2 form factor as part of Aupera Technologies' (Vancouver, BC) All Flash Array. The AupM001 is an M.2 MRAM module designed with Everspin’s EMD3D064M ST-MRAM. Its initial capacity is 32 MB, with higher capacities becoming available soon, said Everspin president and CEO Phill LoPresti in a telephone interview with EE Times. “We feel this is right in the sweet spot we targeted the products for when we started development."
June 18, 2015
Everspin MRAM makes it to Koyo PLCs
Non-Volatile memory on the shop floor
by Charlie Demerjian, SemiAccurate
Every time SemiAccurate talks about Everspin’s MRAM, a lot of people ask about what it can be found in. Today we can add another name to the list that is slightly out of our normal area of coverage, industrial programmable logic controllers (PLCs) from Koyo.
June 5, 2015
Thanks For The Memories
by Tom Coughlin, Forbes
Technology is the great generator of wealth in the modern world. It is by the application of applied thought and its expression in the world around us that much of our economy is based. Digital storage and memory are key elements in this great generator of value, as these are devices that retain content and make it available for our use.
May 6, 2015
3DNAND, MRAM, RRAM: Emerging Opportunities and Challenges for the Changing Memory Market
By Paula Doe, SEMI
Ever growing volumes of data to be stored and accessed, and advancing process technologies for sophisticated control of deposition and etch in complex stacks of new materials, are creating a window of opportunity for an emerging variety of next-generation non-volatile memory technologies. While Flash memory goes vertical for higher densities, resistive RAM and spin-transfer magnetic RAM technologies are moving towards commercial manufacture for initial applications in niches that demand a different mix of speed, power and endurance than flash or SRAM.