News Stories and Press Releases

Chandler, AZ, November 2, 2017— Everspin Technologies, Inc., (Nasdaq:MRAM), today announced that it will report results for its fiscal third quarter 2017 after the market closes  on Monday, November 13, 2017. Following the issuance of the company’s financial results press release, interested parties can listen to a live webcast of the company's  conference call which will start at 4:30 p.m. Eastern Time by visiting the Investor Relations section of Everspin’s website. 

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Everspin Technologies is close to completing its first move into solid-state drives. Everspin recently started taking orders for solid-state drives (SSDs) that use spin-torque magnetoresistive random access memory (ST-MRAM) technology. The nvNITRO Storage Accelerator SSDs can deliver ultrafast performance far in excess of NAND flash and approaching DRAM's speed.

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MRAMs gelten als zuverlässige Speicher zum Aufzeichnen und Schützen kritischer Systemdaten. Durch fortschrittliche Technologie ist nun MRAM-Speicher möglich, der sich wie nicht-flüchtiges DRAM verhält.

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CHANDLER, Ariz., Aug. 23, 2017 -- Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM), today announced it had named Kevin Conley as its President and Chief Executive Officer effective Sept. 1. Conley succeeds Phill LoPresti as the company moves aggressively to capitalize on Storage Class Memory opportunities with its MRAM technology leadership.

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Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology.

GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly starting later this year. This represents a big shift in the market, because until now only Everspin has shipped MRAM for various applications, such as a battery-backed SRAM replacement, write-cache and others.

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The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types.

As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading.

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Chandler, AZ, August 10, 2017— Everspin Technologies, Inc. (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the company’s second quarter 2017 financial results for the quarter ended June 30, 2017.

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This week, Everspin launched its line of MRAM-based nvNITRO NVMe Storage Accelerator cards with an incredible performance spec: up to 1.46 million IOPS for random 4Kbyte mixed 70/30 read/write operations. In the world of IOPS, that’s very fast. In fact it’s roughly 3x faster than an Intel P4800X Optane SSD card, which is spec’ed at up to 500K IOPS for random 4Kbyte mixed 70/30 read/write operations. Multiple factors contribute to the nvNITRO Storage Accelerator’s speed including Everspin’s new 1Gbit Spin Torque Magnetorestrictive RAM (ST-MRAM) with high-speed, DDR4, SDRAM-compatible I/O; a high-performance, MRAM-specific memory controller IP block compatible with NVMe 1.1+; and the Xilinx Kintex UltraScale KU060 FPGA that implements the MRAM controller and the board’s PCIe Gen3 x8 host interface. Everspin’s nvNITRO NVMe cards will ship in Q4 of 2017 and will be available in 1 and 2Gbyte capacities.

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The future is now. For years it seems like non-volatile RAM (NVRAM) has been a technology that is just over the horizon. While there have been some isolated use cases where the technology makes sense and is being used, we are now entering, actually we’ve entered, an era where broad adoption of the technology is realistic. To underscore the state of NVRAM, Everspin Technologiesis now shipping its first version of its nvNITRO Storage Accelerator which puts NVRAM technology in the hands of data center planners and storage system builders.

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Eversping has a bunch of MRAM announcements today starting with the first Gigabit device. On top of that there are a few PCIe based accelerator boards to talk about.

SemiAccurate has always thought Everspin technology was interesting and saw a lot of potential for the products. Until today you could only get their MRAM in 256Mb capacities, enough for some applications but a bit of a psychological downer to be in the Mb class in a Gb world. Sure the tech was radically different but those numbers do make some skeptical. As we mentioned that changed with the introduction of today’s 1Gb class MRAMs. They are built on a Globalfoundries 28nm process, something SemiAccurate previously told you about, and will probably port down to the 22/20nm node soon enough.

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