Published:
August 7, 2017
Chandler, AZ, August 7, 2017 — Everspin Technologies, Inc. (NASDAQ: MRAM), has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and overprovisioning, common limitations for NAND Flash based SSDs.