News Stories and Press Releases
September 16, 2016
Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark
…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.
September 15, 2016
Everspin’s ST-MRAM with pMTJ will be available as discrete memory manufactured by GLOBALFOUNDRIES and as embedded memory under license to GLOBALFOUNDRIES.
Chandler, AZ, September 15, 2016 — Everspin Technologies, Inc., has announced that its most advanced ST-MRAM technology will be available as an embedded memory through its relationship with GLOBALFOUNDRIES. With the GLOBALFOUNDRIES announcement of 22FDX eMRAM based on Everspin’s ST-MRAM technology, customers will have access to memory that offers the benefit of working memory (SRAM) combined with code storage (Flash), enabling system designers to take advantage of our latest NVM memory technology.
September 15, 2016
High-performance embedded non-volatile memory solution is ideally suited for emerging applications in advanced IoT and automotive
September 10, 2016
Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016
Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.
Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.
Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology
August 9, 2016
Aupera Reveals an MRAM-enabled M.2 Storage Module based on Everspin’s newest 256Mb Perpendicular Spin Torque MRAM
The Aup-AXL-M128 offers a high speed, low latency storage tier for Flash Arrays
Chandler, AZ, August 9, 2016 – Everspin Technologies and Aupera Technologies Inc., today announced the launch of the world’s first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. Aupera’s Aup-AXL-M128 is currently used in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance.
August 5, 2016
by Robin Harris for Storage Bits, August 4, 2016
Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.
At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.
August 3, 2016
Everspin 256Mb ST-MRAM with Perpendicular MTJ Now Sampling
Chandler, AZ, August 3, 2016. Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.
May 12, 2016
May 12, 2016
By Robin Harris for Storage Bits
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.