Published:
September 16, 2016
by Rick Merritt, EE Times
SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.