News Stories and Press Releases
October 29, 2019
Everspin announced the world’s first 32Mb Toggle MRAM product. Everspin’s new 32Mb Toggle MRAM (MR5A16A) provides twice the capacity of its current 16Mb solution and enables critical applications, such as storing configurations and setup and data logging in embedded systems that need a higher density option, while also providing the proven benefits of Everspin’s Toggle MRAM.
October 24, 2019
Everspin will release its third quarter 2019 financial results after market close on Thursday, November 7, 2019. Kevin Conley, President and CEO, and Jeff Winzeler, CFO, will host a conference call at 5:00 p.m. Eastern Time to discuss the Company’s financial results.
August 16, 2019
Everspin to Participate at Jefferies Semiconductor, Hardware and Communications Infrastructure Summit on August 28
Everspin today announced Kevin Conley, President and CEO will participate at the Jefferies Semiconductor, Hardware and Communications Infrastructure Summit to be held at the Ritz-Carlton Hotel in Chicago, IL. Mr. Conley will be available to meet with investors throughout the day on Wednesday, August 28, 2019.
August 12, 2019
Everspin announced an IP cross-licensing agreement with Seagate Technology (NASDAQ: STX), a world leader in data storage solutions. Both companies hold an extensive portfolio of IP that is further strengthened by this agreement including the assignment and licensing of MRAM patents from Seagate to Everspin as well as licensing of specific Tunneling Magnetoresistance (TMR) patents from Everspin to Seagate.
August 8, 2019
Everspin Honored with Best of Show Award for Most Innovative Flash Memory Technology at Flash Memory Summit 2019
Everspin was honored with a Flash Memory Summit 2019 Best of Show Award for most innovative flash memory technology at last night’s awards ceremony.
August 7, 2019
Everspin announced financial results for the second quarter ended June 30, 2019.
- Total revenue was $8.6 million, at the high-end of revised guidance
- Loss per share was ($0.21), a $0.04 per share sequential improvement
- Operating expenses decreased sequentially by $1.3 million to $7.6 million as the 1Gb STT-MRAM device transitioned from R&D into production
- Announced Phison Electronics and Sage Microelectronics to provide native support for 1Gb STT-MRAM in their enterprise SSD controller chips
- Refinanced Company debt facility, substantially reducing the cash burn over the next 12 months
August 6, 2019
Everspin Builds Ecosystem for 1-Gigabit Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)
Everspin today announced several ecosystem partnerships for its 1-Gigabit (Gb) Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) product. With volume production of MRAM devices spanning 128Kb to 256Mb and the growing demand for its ground-breaking 1 Gb STT-MRAM density part just entering production, Everspin is extending its leadership in MRAM memory component manufacturing.
August 5, 2019
Everspin Expands Spin-transfer Torque MRAM Ecosystem Support for its 1 Gigabit STT- MRAM with Cadence Design IP and Verification IP
Everspin announced it is expanding the ecosystem for its 1 Gb Spin-transfer Torque MRAM (STT-MRAM) with Cadence Design Systems, Inc. providing DDR4 Design IP (DIP) and Verification IP (VIP) support for Everspin’s 1 Gb STT-MRAM memory.
August 1, 2019
Everspin to Showcase Partnerships Leveraging 1Gb STT-MRAM and Deliver Eight Industry Presentations at Flash Memory Summit 2019
Media Alert: Everspin will exhibit and present at MRAM Developer Day on Monday, August 5 and Flash Memory Summit through Thursday, August 8 in Santa Clara, CA.
July 31, 2019
Sage Microelectronics and Everspin Partner to Bring Spin-transfer Torque MRAM to Next Generation Enterprise SSD Devices
Everspin announced its partnership with Sage Microelectronics Corporation. Sage’s new Enterprise Grade Flash memory controller will provide native support for Everspin’s 1 Gb STT-MRAM memory. Sage Microelectronics controllers withEverspin’s 1 Gb STT-MRAM enable storage system designers to increase the reliability and performance of systems where high-performance data persistence is critical by delivering protection against power loss without the use of supercapacitors or batteries.