May 22, 2017

Impinj and Everspin Memory Chips Could Be the Next Big Thing

In the world of computer chips, all glory goes to the microprocessor, and especially to the kind that Intel sells, which serves as the brains of your personal computer.

But there are many other kinds of chips in the universe of semiconductors, some increasingly more important.

This magazine argued in a 2015 cover story that memory...

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March 27, 2017

Moore's Law's Over: Don't Buy Intel, Qualcomm Or Western Digital

Beginning in the late 1960s you could bet that every 18 to 24 months the number of transistors on a semiconductor would double while its cost fell 50%. Now that predictable pattern -- dubbed Moore's Law -- is no more.

Does that mean the companies that used to follow Moore's Law -- such as Intel, Qualcomm, and Western Digital (I have no financial interest in the companies mentioned in this post) -- are fated to a future of mediocrity? Or can they build or buy their way to faster growth?

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March 13, 2017

nvNITRO operates at 1.5M IOPS with 6μs latency

Everspin has a fairly robust market for its first-generation products—the company also announced that JAG Jakob, which makes process control systems for pharmaceuticals and biotech facilities, is using its 16Mb MRAM. However, the market for the higher density ST-MRAM devices is still evolving.

“There is always some type of market adoption rate for new technology,” said Joe O’Hare, Everspin’s director of product marketing. “But we’ve been making very good progress here.”

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March 10, 2017

Everspin's new gig: a gig or two of non-volatile RAM on PCIe

Non-volatile memory outfit Everspin's popped some of its Spin Torque MRAM onto a PCIe card in the hope system builders get excited about a new tier of memory. Or is it a new tier of storage?

The first of the new “nvNITRO E” range will be a half-height, half-length PCIe card that can operate as an NVMe solid state disk, or as memory mapped IO (MMIO).

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March 10, 2017

Everspin's 1.5 million IOP SSD: Their secret is MRAM

Everspin has shipped over 60 million MRAM chips in the last eight years. So why haven't you heard of them?

MRAM is a different type of nonvolatile memory, with unlimited durability, good speed - 35nsec reads and writes - 20+ years of data durability, lower power consumption than flash, byte addressability, and the ability to endure extreme temperatures. It also costs much more than flash. As such it has found a ready market in embedded systems where reliability and ruggedness are paramount, like automotive, military and industrial applications.

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March 9, 2017

Everspin Announces nvNITRO™ NVMe Storage Accelerator Family

Everspin unveils a new low latency, PCIe NVMe card based on Spin Torque MRAM

Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced its nvNITRO™ line of storage accelerators which delivers extremely fast read and write times with ultra-low latency. Everspin is introducing initial capacities of 1 Gigabyte and 2 Gigabyte of Spin Torque MRAM today, based on its 256Mb DDR3 ST-MRAM. 

Capacities from 4 Gigabyte up to 16 Gigabytes will be available later in this year utilizing Everspin’s 1 Gigabit DDR4 ST-MRAM. The nvNITRO™ ES1GB and ES2GB operate at a blazing 1,500,000 IOPS with 6 microsecond end-to-end latency. They are offered in a half-height, half-length (HHHL) PCIe card with two access modes: NVMe SSD and memory mapped IO (MMIO). 

Download the entire press release

February 14, 2017

MRAM Earns its Stripes in Hi-Rel Applications

Duncan Bennett, Product Marketing Manager at Everspin Technologies, Inc., examines how MRAM has significant advantages over alternative memory technologies like Flash/EEPROM or SRAM, when operating in environments such as high altitude, space, or military applications. 

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December 4, 2016

62nd International Electron Devices Meeting (IEDM), San Francisco

December 3-7, 2016

Everspin Technologies, jointly with GlobalFoundries, will present an invited paper titled: “Technology for Reliable Spin-Torque MRAM Products”

Speaking for Everspin, Jon Slaughter, Ph.D., Vice President, Technology Research and Development at Everspin Technologies states, “… we will present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.”

December 6th, 4pm in Session 2

October 27, 2016

Making Unforgettable MRAM Memory with OpenPOWER

By Adam McPadden, Lead Engineer, Burlington Systems Lab, IBM

One of the key tenets of the OpenPOWER Foundation’s collaborative model is that having open systems and published interfaces allows people to create innovative architectures at all different areas of the system, including ones where there hasn’t been much change in decades like memory.

In validation of this approach, OpenPOWER members IBM, and Everspin have demonstrated a new way for OpenPOWER members to improve application performance with STT-MRAM on the memory bus of a POWER8 server.

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September 16, 2016

GF Debuts 7nm, Embedded MRAM

by Rick Merritt, EE Times

SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.

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