January 25, 2018

What’s the Difference Between All Those Emerging Memory Technologies?

There are many memory technologies competing with flash. Find out what the options are and how they work.

As opposed to the FRAM, an MRAM actually does use magnetism to store bits.  This makes some people worry that bits will be disturbed by external magnetic fields, but these bits are flipped by energy that is applied in very close proximity to the magnet, so the local field is extraordinarily dense compared to most externally applied fields.  In other words, although you could cause bits to by applying an external magnetic field, that field would need to be extremely strong, so it would take a big effort to cause any trouble.

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January 24, 2018

Cloud And Solid State Advances Give Customers New Choices

EverSpin said that it had begun 40 nm perpendicular Magnetic Tunnel Junction (MTJ) STT-MRAM 256Mb chip production in Q4 2017 and will be scaling into volume production in 2018. The company says that this advance is an enabling step to bring MRAM to more markets since this is the first MTJ STT-MRAM entering mass production. EverSpin provides single chip MRAM solutions, while its production partner, Global Foundries, is putting this technology into embedded applications. The 256MB STT-MRAM solutions employs an ST-DDR3 interface. EverSpin says that it has shipped over 70 million MRAM chips so far for data centers, cloud storage, energy, industrial, automotive and transportation markets.

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January 22, 2018

Everspin Targets Niches for MRAM (EE Times)

TORONTO — Consistent challenge with emerging memories: the volume must go up for the price to come down, and the price has to come down for the volume to go up. Everspin Technologies is hoping, however, that specific industries will favor value over price-per-bit as it ramps up production of its MRAM.

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January 21, 2018

Everspin starts 40nm STT-MRAM volume production for discrete and embedded MRAM offerings

Everspin Technologies, developer and manufacturer of discrete and embedded MRAM, announced this week its recorded revenue for its first 40nm 256Mb STT-MRAM products in the fourth quarter of 2017, and is in the process of ramping its volume production in 2018. This achievement represents an important milestone for STT-MRAM as it is the enabling step for bringing the persistent memory to market.

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January 8, 2018

The Future of Spintronic Memory

Over the past 60 years, semiconductor chips have become smaller, cheaper, and more powerful, and their proliferation has enabled the ubiquitous computing we enjoy today. Intel founder Gordon Moore suggested in 1965 that improvements in manufacturing techniques would allow overall processing power for computers to double approximately every two years as the number of transistors on each integrated circuit doubled, an observation that became known as Moore's Law.

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September 14, 2017

Everspin Technologies ready to ship nvNITRO ST-MRAM SSDs

Everspin Technologies is close to completing its first move into solid-state drives. Everspin recently started taking orders for solid-state drives (SSDs) that use spin-torque magnetoresistive random access memory (ST-MRAM) technology. The nvNITRO Storage Accelerator SSDs can deliver ultrafast performance far in excess of NAND flash and approaching DRAM's speed.

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September 13, 2017

Neue MRAM-Speicherklasse verhält sich wie nicht-flüchtiges DRAM

MRAMs gelten als zuverlässige Speicher zum Aufzeichnen und Schützen kritischer Systemdaten. Durch fortschrittliche Technologie ist nun MRAM-Speicher möglich, der sich wie nicht-flüchtiges DRAM verhält.

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August 21, 2017

Four Foundries Back MRAM

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology.

GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly starting later this year. This represents a big shift in the market, because until now only Everspin has shipped MRAM for various applications, such as a battery-backed SRAM replacement, write-cache and others.

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August 17, 2017

What is Spin Torque MRAM?

The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types.

As part of an ongoing series, Semiconductor Engineering will explore where the new and traditional memory technologies are heading.

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August 9, 2017

Everspin’s new MRAM-based nvNITRO NVMe card delivers Optane-crushing 1.46 million IOPS

This week, Everspin launched its line of MRAM-based nvNITRO NVMe Storage Accelerator cards with an incredible performance spec: up to 1.46 million IOPS for random 4Kbyte mixed 70/30 read/write operations. In the world of IOPS, that’s very fast. In fact it’s roughly 3x faster than an Intel P4800X Optane SSD card, which is spec’ed at up to 500K IOPS for random 4Kbyte mixed 70/30 read/write operations. Multiple factors contribute to the nvNITRO Storage Accelerator’s speed including Everspin’s new 1Gbit Spin Torque Magnetorestrictive RAM (ST-MRAM) with high-speed, DDR4, SDRAM-compatible I/O; a high-performance, MRAM-specific memory controller IP block compatible with NVMe 1.1+; and the Xilinx Kintex UltraScale KU060 FPGA that implements the MRAM controller and the board’s PCIe Gen3 x8 host interface. Everspin’s nvNITRO NVMe cards will ship in Q4 of 2017 and will be available in 1 and 2Gbyte capacities.

 

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