September 16, 2015
Semiconductor Engineering, by Mark Lapedus.
Gaps in the memory hierarchy have created openings for new types of memory, and there is no shortage of possibilities.
The next big thing is a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). STT-MRAM is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction (MTJ) can be modified using a spin-polarized current.
August 24, 2015
TORONTO — Everspin Technologies Inc. (Chandler, Ariz.) built its business as a magnetoresistive RAM (MRAM) company through industrial and automotive applications, but it’s always been looking at broader applications for both its MRAM and Spin-Torque MRAM (ST-MRAM), particularly for applications that require data persistence and integrity, low latency, and security.
Now its MRAM has found its way into the M.2 form factor as part of Aupera Technologies' (Vancouver, BC) All Flash Array. The AupM001 is an M.2 MRAM module designed with Everspin’s EMD3D064M ST-MRAM. Its initial capacity is 32 MB, with higher capacities becoming available soon, said Everspin president and CEO Phill LoPresti in a telephone interview with EE Times. “We feel this is right in the sweet spot we targeted the products for when we started development."
June 18, 2015
Non-Volatile memory on the shop floor
Every time SemiAccurate talks about Everspin’s MRAM, a lot of people ask about what it can be found in. Today we can add another name to the list that is slightly out of our normal area of coverage, industrial programmable logic controllers (PLCs) from Koyo.
June 5, 2015
by Tom Coughlin, Forbes
Technology is the great generator of wealth in the modern world. It is by the application of applied thought and its expression in the world around us that much of our economy is based. Digital storage and memory are key elements in this great generator of value, as these are devices that retain content and make it available for our use.
May 6, 2015
By Paula Doe, SEMI
Ever growing volumes of data to be stored and accessed, and advancing process technologies for sophisticated control of deposition and etch in complex stacks of new materials, are creating a window of opportunity for an emerging variety of next-generation non-volatile memory technologies. While Flash memory goes vertical for higher densities, resistive RAM and spin-transfer magnetic RAM technologies are moving towards commercial manufacture for initial applications in niches that demand a different mix of speed, power and endurance than flash or SRAM.
November 26, 2014
Cobham Semiconductor Solutions Announces QML Q/Q+ Qualification of their MRAMs with IP from Everspin Technologies, Inc.
Cobham Semiconductor Solutions (formerly Aeroflex) announces QML Q/Q+ certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc. The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flat pack with prototypes available now, and a 16Mbit device, UT8MR2M8, available in a 40-lead flat pack and in production.
November 19, 2014
Everspin Technologies Inc. is ready to build its new generation of computer and electronics memory that doesn't need batteries, and it's got a new partner to help it.
The Chandler-based company announced late last month it will work with Santa Clara, California-based GlobalFoundaries to develop silicon wafers for the latest version of its magneto-resistive random access memory.
October 29, 2014
The introduction of non-volatile memory as main memory in computer systems could fundamentally change computer architectures and the way we use microprocessor-based systems. Current ST MRAM market leader, Everspin, has reached an agreement with GLOBALFOUNDRIES to supply 300 mm CMOS wafers with Everspin's ST-MRAM technology (Everspin says that they have shipped over 40 M MRAM chips).
October 29, 2014
Everspin Technologies entered into a partnership with GlobalFoundries to build fully processed 300mm wafers with Everspin's ST-MRAM technology, starting with GF's 28-nm and 40-nm low-power CMOS platforms. As part of the agreement, GlobalFoundries invested an undisclosed amount in Everspin, and they already acquired ST-MRAM processing equipment (40-nm).
October 27, 2014
Everspin has signed up chip maker Global Foundries as a manufacturing partner for its next-generation MRAM (Magnetoresistive RAM) memory chips, in a development that should help the promising technology move toward mass production.