August 5, 2016

Everspin to show world's fastest SSD

by Robin Harris for Storage Bits, August 4, 2016

Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.

At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.

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May 12, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times DesignLines
  

May 12, 2016

Everspin's MRAM shoots for the NVM crown

By Robin Harris for Storage Bits

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

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May 12, 2016

New non-volatile memory technologies poised to reshape system and application design

April 25, 2016

Why MRAM Hasn't Killed DRAM

By obin Harris for Storage Bits, April 20, 2016

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

Read the entire article

April 18, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times, Designlines

TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.

In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.

Read the entire interview from EE Times

March 1, 2016

Everspin Produces 1Mb MRAM with Quad SPI Interface

Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.

This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.

Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.

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January 28, 2016

Cobham Announces QML V Qualification of their MRAM with IP from Everspin Technologies, Inc.

Colorado Springs, Colorado – Cobham Semiconductor Solutions announces QML V certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc.

The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flatpack, and a 16Mbit device, UT8MR2M8, available in a 40-lead flatpack.  Both are in production and have been designed into various future satellites.

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December 7, 2015

ARM Sizes Up Moore's Law – Views MRAM positively for future scaling

Rick Merrit, Silicon Valley Bureau Chief for EE Times, reports on the keynote by Greg Yeric of ARM Research at the annual International Electron Devices Meeting (IEDM) in Washington D.C. 

Acording to Yeric, "The physical nature of resistive RAM and Phase Change Memory will most likely limit both density and endurance to below requirements for main memory,” he wrote. “If MRAM power and cost improve, its superior endurance makes it a potential candidate to enable memory as compute..."

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November 6, 2015

Artesyn announces VME single board computer based on Freescale processor

By Pradeep Chakraborty, Control Engineering Asia.  

Artesyn Embedded Technologies announced a new high performance VME single board computer, the MVME8105, to provide more computing performance, data throughput and long life cycle support for a range of high end industrial control, C4ISR and mission critical applications.

Featuring the Freescale QorIQ P5020 2.0 GHz processor, the MVME8105 provides 4 GB soldered DDR3-1333 MHz ECC memory, 512 K MRAM non-volatile memory and 8 GB eMMC NAND Flash. It offers multiple USB, Serial and Ethernet ports and supports a range of operating systems including Wind River VxWorks, Linux and Green Hills Integrity.

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