April 25, 2016
By Robin Harris for Storage Bits, April 20, 2016
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.
April 18, 2016
by Gary Hilson, EE Times, Designlines
TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.
March 1, 2016
Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.
This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.
Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.
January 28, 2016
Colorado Springs, Colorado – Cobham Semiconductor Solutions announces QML V certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc.
The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flatpack, and a 16Mbit device, UT8MR2M8, available in a 40-lead flatpack. Both are in production and have been designed into various future satellites.
December 7, 2015
Rick Merrit, Silicon Valley Bureau Chief for EE Times, reports on the keynote by Greg Yeric of ARM Research at the annual International Electron Devices Meeting (IEDM) in Washington D.C.
Acording to Yeric, "The physical nature of resistive RAM and Phase Change Memory will most likely limit both density and endurance to below requirements for main memory,” he wrote. “If MRAM power and cost improve, its superior endurance makes it a potential candidate to enable memory as compute..."
November 6, 2015
By Pradeep Chakraborty, Control Engineering Asia.
Artesyn Embedded Technologies announced a new high performance VME single board computer, the MVME8105, to provide more computing performance, data throughput and long life cycle support for a range of high end industrial control, C4ISR and mission critical applications.
Featuring the Freescale QorIQ P5020 2.0 GHz processor, the MVME8105 provides 4 GB soldered DDR3-1333 MHz ECC memory, 512 K MRAM non-volatile memory and 8 GB eMMC NAND Flash. It offers multiple USB, Serial and Ethernet ports and supports a range of operating systems including Wind River VxWorks, Linux and Green Hills Integrity.
September 18, 2015
Mark Lapedus from Semiconductor Engineering interviews Everspin's president and CEO, Phillip LoPresti
Today, the industry is shipping various next-generation memory types, such as 3D NAND, MRAM and ReRAM. In fact, MRAM has been shipping for some time. To get a handle on MRAM, Semiconductor Engineering sat down to discuss the technology with Phillip LoPresti, president and chief executive of Everspin, a supplier of MRAMs.
September 16, 2015
Semiconductor Engineering, by Mark Lapedus.
Gaps in the memory hierarchy have created openings for new types of memory, and there is no shortage of possibilities.
The next big thing is a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). STT-MRAM is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction (MTJ) can be modified using a spin-polarized current.
August 24, 2015
TORONTO — Everspin Technologies Inc. (Chandler, Ariz.) built its business as a magnetoresistive RAM (MRAM) company through industrial and automotive applications, but it’s always been looking at broader applications for both its MRAM and Spin-Torque MRAM (ST-MRAM), particularly for applications that require data persistence and integrity, low latency, and security.
Now its MRAM has found its way into the M.2 form factor as part of Aupera Technologies' (Vancouver, BC) All Flash Array. The AupM001 is an M.2 MRAM module designed with Everspin’s EMD3D064M ST-MRAM. Its initial capacity is 32 MB, with higher capacities becoming available soon, said Everspin president and CEO Phill LoPresti in a telephone interview with EE Times. “We feel this is right in the sweet spot we targeted the products for when we started development."