News
September 10, 2016
Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM
Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016
Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.
Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.
Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology
August 5, 2016
Everspin to show world's fastest SSD
by Robin Harris for Storage Bits, August 4, 2016
Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.
At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.
May 12, 2016
Everspin Aims MRAM at SSD Storage Tiers
TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
The company recently announced it is shipping 256Mb spin torque technology (ST-MRAM) samples, now the highest commercial density on the market, aimed at applications requiring persistent memory in storage devices and servers using DDR3 and DDR4 interfaces.
May 12, 2016
Everspin's MRAM shoots for the NVM crown
By Robin Harris for Storage Bits
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.
April 25, 2016
Why MRAM Hasn't Killed DRAM
By Robin Harris for Storage Bits, April 20, 2016
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.
April 18, 2016
Everspin Aims MRAM at SSD Storage Tiers
by Gary Hilson, EE Times, Designlines
TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.
March 1, 2016
Everspin Produces 1Mb MRAM with Quad SPI Interface
Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.
This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.
Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.
January 28, 2016
Cobham Announces QML V Qualification of their MRAM with IP from Everspin Technologies, Inc.
Colorado Springs, Colorado – Cobham Semiconductor Solutions announces QML V certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc.
The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flatpack, and a 16Mbit device, UT8MR2M8, available in a 40-lead flatpack. Both are in production and have been designed into various future satellites.
December 7, 2015
ARM Sizes Up Moore's Law – Views MRAM positively for future scaling
Rick Merrit, Silicon Valley Bureau Chief for EE Times, reports on the keynote by Greg Yeric of ARM Research at the annual International Electron Devices Meeting (IEDM) in Washington D.C.
Acording to Yeric, "The physical nature of resistive RAM and Phase Change Memory will most likely limit both density and endurance to below requirements for main memory,” he wrote. “If MRAM power and cost improve, its superior endurance makes it a potential candidate to enable memory as compute..."