September 16, 2016

MRAM Is Becoming Mainstream Memory

by Tom Coughlin, Forbes

Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.

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September 16, 2016

Global Foundries to Introduce Everspin eMRAM with FD-SOI Chips

Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark

…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.

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September 10, 2016

Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM

Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016

Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.  

Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.

Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology

Register

August 5, 2016

Everspin to show world's fastest SSD

by Robin Harris for Storage Bits, August 4, 2016

Non-volatile RAM -- NVRAM for short -- is the Next Big Thing in digital storage. Everspin has announced that the industry's first Perpendicular Magnetic Tunnel Junction chip is now shipping. The company will demo the worlds's fastest SSD using it next week.

At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most Flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.

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May 12, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times DesignLines
  

May 12, 2016

Everspin's MRAM shoots for the NVM crown

By Robin Harris for Storage Bits

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

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May 12, 2016

New non-volatile memory technologies poised to reshape system and application design

April 25, 2016

Why MRAM Hasn't Killed DRAM

By obin Harris for Storage Bits, April 20, 2016

While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.

Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.

Read the entire article

April 18, 2016

Everspin Aims MRAM at SSD Storage Tiers

by Gary Hilson, EE Times, Designlines

TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.

In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.

Read the entire interview from EE Times

March 1, 2016

Everspin Produces 1Mb MRAM with Quad SPI Interface

Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.

This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.

Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.

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