March 10, 2017

Everspin's 1.5 million IOP SSD: Their secret is MRAM

Everspin has shipped over 60 million MRAM chips in the last eight years. So why haven't you heard of them?

MRAM is a different type of nonvolatile memory, with unlimited durability, good speed - 35nsec reads and writes - 20+ years of data durability, lower power consumption than flash, byte addressability, and the ability to endure extreme temperatures. It also costs much more than flash. As such it has found a ready market in embedded systems where reliability and ruggedness are paramount, like automotive, military and industrial applications.

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March 10, 2017

Everspin's new gig: a gig or two of non-volatile RAM on PCIe

Non-volatile memory outfit Everspin's popped some of its Spin Torque MRAM onto a PCIe card in the hope system builders get excited about a new tier of memory. Or is it a new tier of storage?

The first of the new “nvNITRO E” range will be a half-height, half-length PCIe card that can operate as an NVMe solid state disk, or as memory mapped IO (MMIO).

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March 9, 2017

Everspin Announces nvNITRO™ NVMe Storage Accelerator Family

Everspin unveils a new low latency, PCIe NVMe card based on Spin Torque MRAM

Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced its nvNITRO™ line of storage accelerators which delivers extremely fast read and write times with ultra-low latency. Everspin is introducing initial capacities of 1 Gigabyte and 2 Gigabyte of Spin Torque MRAM today, based on its 256Mb DDR3 ST-MRAM. 

Capacities from 4 Gigabyte up to 16 Gigabytes will be available later in this year utilizing Everspin’s 1 Gigabit DDR4 ST-MRAM. The nvNITRO™ ES1GB and ES2GB operate at a blazing 1,500,000 IOPS with 6 microsecond end-to-end latency. They are offered in a half-height, half-length (HHHL) PCIe card with two access modes: NVMe SSD and memory mapped IO (MMIO). 

Download the entire press release

February 14, 2017

MRAM Earns its Stripes in Hi-Rel Applications

Duncan Bennett, Product Marketing Manager at Everspin Technologies, Inc., examines how MRAM has significant advantages over alternative memory technologies like Flash/EEPROM or SRAM, when operating in environments such as high altitude, space, or military applications. 

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December 4, 2016

62nd International Electron Devices Meeting (IEDM), San Francisco

December 3-7, 2016

Everspin Technologies, jointly with GlobalFoundries, will present an invited paper titled: “Technology for Reliable Spin-Torque MRAM Products”

Speaking for Everspin, Jon Slaughter, Ph.D., Vice President, Technology Research and Development at Everspin Technologies states, “… we will present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.”

December 6th, 4pm in Session 2

October 27, 2016

Making Unforgettable MRAM Memory with OpenPOWER

By Adam McPadden, Lead Engineer, Burlington Systems Lab, IBM

One of the key tenets of the OpenPOWER Foundation’s collaborative model is that having open systems and published interfaces allows people to create innovative architectures at all different areas of the system, including ones where there hasn’t been much change in decades like memory.

In validation of this approach, OpenPOWER members IBM, and Everspin have demonstrated a new way for OpenPOWER members to improve application performance with STT-MRAM on the memory bus of a POWER8 server.

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September 16, 2016

GF Debuts 7nm, Embedded MRAM

by Rick Merritt, EE Times

SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.

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September 16, 2016

MRAM Is Becoming Mainstream Memory

by Tom Coughlin, Forbes

Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.

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September 16, 2016

Global Foundries to Introduce Everspin eMRAM with FD-SOI Chips

Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark

…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.

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September 10, 2016

Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM

Everspin Technologies showcases MRAM Technology at GLOBAL FOUNDRIES Technical Conference 2016

Everspin will be demonstrate the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.  

Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.

Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology