August 9, 2016

Aupera Reveals an MRAM-enabled M.2 Storage Module based on Everspin’s newest 256Mb Perpendicular Spin Torque MRAM

The Aup-AXL-M128 offers a high speed, low latency storage tier for Flash Arrays

Chandler, AZ, August 9, 2016 – Everspin Technologies and Aupera Technologies Inc., today announced the launch of the world’s first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM.  Aupera’s Aup-AXL-M128 is currently used in Aupera’s All Flash Array system as a hardware acceleration engine for specific applications that require low latency and high performance.

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August 3, 2016

Everspin 256Mb ST-MRAM with Perpendicular MTJ Sampling

Everspin 256Mb ST-MRAM with Perpendicular MTJ Now Sampling

Chandler, AZ, August 3, 2016.  Everspin Technologies strengthens its leadership position in ST-MRAM by sampling the world’s first product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM to customers. This 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.

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April 13, 2016

Everspin Releases Fastest And Most Reliable Non-Volatile Storage Class Memory

Everspin plans production of 256Mb & 1Gb products, bringing the most advanced memory solutions to the multi-billion dollar market for persistent memory in storage devices and servers.

Chandler, AZ, April 13, 2016

Everspin Technologies announced today that it is shipping 256Mb ST-MRAM samples to global customers, enabling new product solutions using a true MRAM-based Storage Class Memory (SCM). This 256Mb ST-MRAM product breaks the record for the highest density commercial MRAM currently available in the market.

Everspin, having held the previous record, has consistently led the industry, delivering the highest density MRAM products. The company also plans further density increases and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology (ST-MRAM) later this year. Everspin’s MRAM has demonstrated interface speeds comparable to DRAM; the new 256Mb and 1Gb ST-MRAM products will continue this performance with DDR3 and DDR4 interfaces, respectively.

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April 8, 2016

Spin Torque MRAM Showcased as the First Storage Class Memory

Chandler, AZ, April 7, 2016 Everspin Technologies today announced that IBM has demonstrated Everspin’s latest Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. The demonstration showed show how Everspin’s DDR3 ST-MRAM operates as persistent memory, accelerating storage and server applications. ConTutto is an IBM research configurable platform for innovation in the memory subsystem of an OpenPOWER node. The DDR3 interface on the Everspin Spin Torque MRAM makes it easy for developers to take advantage of the write speed and persistence of MRAM. In his keynote address, Brad McCredie, Vice President and IBM Fellow, described this as the first functional demonstration of a storage class memory in an enterprise system.

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March 29, 2016

Everspin Technologies Joins the OpenPOWER Foundation

Chandler, AZ, March 29, 2016 Everspin Technologies today announced that it has joined the OpenPOWER Foundation, an open development community based on the POWER microprocessor architecture.

Everspin joins a growing roster of technology organizations working collaboratively to build advanced server, networking, storage and acceleration technology as well as industry leading open source software aimed at delivering more choice, control and flexibility to developers of next-generation, hyperscale and cloud data centers. The group makes POWER hardware and software available to open development for the first time, as well as making POWER intellectual property licensable to others, greatly expanding the ecosystem of innovators on the platform. .

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February 23, 2016

Micross Components to Distribute Everspin Technologies MRAM Products

Micross to provide access to Everspin MRAM in die form for those customers requiring small form factors

ORLANDO, Florida, February 23, 2016 – Micross Components (“Micross”), a global provider of specialty electronic components with a 35-year history in providing authentic, high-reliability products, announced an agreement with Everspin Technologies to distribute Everspin’s industry-leading MRAM products in die and wafer form.

MRAM has become the memory of choice in applications requiring intensive data logging, protection of data in the event of power loss and the ability to operate reliably at high speed over extreme temperatures. 

February 22, 2016

Everspin announces production of the first MRAM with a Quad SPI interface

The MR10Q010 1Mb Quad SPI MRAM runs at 104MHz, offering the fastest non-volatile write speeds in the industry and is now available in both SOIC and BGA packages.
Chandler, AZ, Feb 22, 2016 - Everspin has announced production availability of the world’s fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM. This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash. Combined with limitless write cycle endurance, the MR10Q010 is ideal for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical data storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.

February 19, 2016

Everspin expands automotive grade MRAM product line

Everspin offers a 16Mb MRAM with automotive temperature range and a 128kB SPI MRAM in Grade 1 and Grade 3 ranges for use in automotive and other high reliability systems

Chandler, AZ, Feb 19, 2016
Everspin has announced availability of two new additions to its high performance MRAM automotive product line. The 16Mb MRAM now is available in the automotive temperature range of -40 C to 125 C and comes in both x8 and x16 IO configurations. With fast 45 ns read and write cycle times in a parallel asynchronous SRAM like interface, the 16Mb automotive MRAM gives designers a very high performance and high reliability persistent memory solution for the demands of this rapidly growing market.

February 18, 2016

Schneider Electric Selects Everspin for Modicon M580 ePAC next generation Programmable Automation Controllers

Chandler, AZ, February 18, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, is providing its 16-Megabit MR4A16BMA35 Magnetoresistive RAM (MRAM) to users of Schneider Electric’s Modicon M580 High End Programmable Automation Controllers, offering them unprecedented data backup capabilities.

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February 16, 2016

Everspin to Present at ROTH Capital Partners Conference

Chandler, AZ, February 16, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that Phill LoPresti, Chief Executive Officer, and Jeff Winzeler, Chief Financial Officer, will present at the 28th annual ROTH Conference, to be held March 13-16, 2016 at the Ritz Carlton hotel in Dana Point, California.

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