Published:
October 27, 2014
Chandler, AZ, Oct 27, 2014 - Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that the company has partnered with GLOBALFOUNDRIES to build fully processed 300mm wafers with Everspin's magnetic tunnel junction (MTJ) Spin-Torque Magnetoresistive Random-Access Memory (ST-MRAM) technology, starting with GLOBALFOUNDRIES 40 nanometer and 28 nanometer Low Power CMOS platforms.