News Archive for 2017
March 27, 2017
Beginning in the late 1960s you could bet that every 18 to 24 months the number of transistors on a semiconductor would double while its cost fell 50%. Now that predictable pattern -- dubbed Moore's Law -- is no more.
Does that mean the companies that used to follow Moore's Law -- such as Intel, Qualcomm, and Western Digital (I have no financial interest in the companies mentioned in this post) -- are fated to a future of mediocrity? Or can they build or buy their way to faster growth?
March 13, 2017
Everspin has a fairly robust market for its first-generation products—the company also announced that JAG Jakob, which makes process control systems for pharmaceuticals and biotech facilities, is using its 16Mb MRAM. However, the market for the higher density ST-MRAM devices is still evolving.
“There is always some type of market adoption rate for new technology,” said Joe O’Hare, Everspin’s director of product marketing. “But we’ve been making very good progress here.”
March 10, 2017
Everspin has shipped over 60 million MRAM chips in the last eight years. So why haven't you heard of them?
MRAM is a different type of nonvolatile memory, with unlimited durability, good speed - 35nsec reads and writes - 20+ years of data durability, lower power consumption than flash, byte addressability, and the ability to endure extreme temperatures. It also costs much more than flash. As such it has found a ready market in embedded systems where reliability and ruggedness are paramount, like automotive, military and industrial applications.
March 10, 2017
Non-volatile memory outfit Everspin's popped some of its Spin Torque MRAM onto a PCIe card in the hope system builders get excited about a new tier of memory. Or is it a new tier of storage?
The first of the new “nvNITRO E” range will be a half-height, half-length PCIe card that can operate as an NVMe solid state disk, or as memory mapped IO (MMIO).
March 9, 2017
Everspin unveils a new low latency, PCIe NVMe card based on Spin Torque MRAM
Chandler, AZ, March 8, 2017 — Everspin Technologies, Inc., the leading provider of MRAM solutions, today announced its nvNITRO™ line of storage accelerators which delivers extremely fast read and write times with ultra-low latency. Everspin is introducing initial capacities of 1 Gigabyte and 2 Gigabyte of Spin Torque MRAM today, based on its 256Mb DDR3 ST-MRAM.
Capacities from 4 Gigabyte up to 16 Gigabytes will be available later in this year utilizing Everspin’s 1 Gigabit DDR4 ST-MRAM. The nvNITRO™ ES1GB and ES2GB operate at a blazing 1,500,000 IOPS with 6 microsecond end-to-end latency. They are offered in a half-height, half-length (HHHL) PCIe card with two access modes: NVMe SSD and memory mapped IO (MMIO).
February 14, 2017
Duncan Bennett, Product Marketing Manager at Everspin Technologies, Inc., examines how MRAM has significant advantages over alternative memory technologies like Flash/EEPROM or SRAM, when operating in environments such as high altitude, space, or military applications.