Datasheets
MR2xH40_Datasheet.pdf
Datasheet for MR2xH40, 4Mb Serial SPI MRAM
Product Change Notices (PCNs)
PCN02996 Add ChipMOS as a Subcontractor Assembly Site for the DFN package
PCN 02996 - Add ChipMOS as a subcontractor assembly site
PCN02934 ASE-M DFN for 4Mb SPI Product.pdf
Everspin Technologies, Inc. has approved ASE-Malaysia as a qualified source of the DFN package used on the MR25H40 4Mb SPI family of products. Everspin will consider this change accepted unless specific conditions for acceptance are provided in writing within 30 days of receipt of this notice.
PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING
Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.
packaging
EST02153_Everspins Small Flag DFN Replaces SOIC Package_AppNote_Rev5 041413.pdf
product notes
PNT02190 8-pin DFN Package with Reduced Exposed Pad Size Recommended for New Designs
PNT02190 8-pin DFN Package with Reduced Exposed Pad Size Recommended for New Designs
application notes
Comparing Technologies FRAM vs. MRAM
Compares FRAM memory technology with Everspin's MRAM technology.
Replacing Cypress CY14B104NA BA and ZS nvSRAMs with Everspin MR2A16A MRAM
Replacing the Cypress CY14B104NA-BA/ZS45XI nvSRAM with Everspin's MR2A16Axxx35 MRAM
Approximating the Magnetic Field When Using Everspin MRAM
How to create an approximation of the magnetic field strength surrounding an MRAM
EVERSPIN's New 2mm Exposed Pad DFN Package Meets Both SOIC-8 and DFN8 PCB Layouts
Replacing SRAM in SOIC or DFN package with MRAM in DFN
Quad SPI Evaluation Boards
technical articles & white papers
MRAM Improvements to Automotive Non-Volatile Memory Storage
Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.
Toggle and Spin-Torque MRAM: Status and Outlook
Article by J.M. Slaughter, et.al., of Everspin Technologies
RoHS / REACH
QUA00417_Everspin Reach Statement_SVHC197_2-25-19.pdf
Everspin Reach Statement - 2019
QUA00417_Everspin Reach Statement 3_27_2018.pdf
Everspin REACH statement
QUA02364_Everspin_RoHS_compliance.pdf
Everspin RoHS compliance
No Red Phosphorus content in Everspin products
Red Phosphorus Statement