Documents for MR20H40CDFR

Datasheets

Rev. 12.5 Effective Dec 17 2019

EST_MR2xH40_Datasheet_Rev12.5.pdf

Datasheet for MR2xH40, 4Mb Serial SPI MRAM

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Product Change Notices (PCNs)

Effective Dec 23 2016

PCN02969 Add Amkor Philippines as a Subcontractor Assembly Site for the DFN small flag package.pdf

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Effective Jan 7 2016

PCN02934 ASE-M DFN for 4Mb SPI Product.pdf

Everspin Technologies, Inc. has approved ASE-Malaysia as a qualified source of the DFN package used on the MR25H40 4Mb SPI family of products. Everspin will consider this change accepted unless specific conditions for acceptance are provided in writing within 30 days of receipt of this notice.

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Rev. 1 Effective Dec 30 2011

PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING

Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.

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packaging

Rev. 1.2 Effective Apr 13 2018

Everspin DFN Package Guide.pdf

Everspin DFN package guide

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application notes

Rev. 1 Effective Sep 28 2015

EST02880 Magnetic Immunity for Everspin MRAM 073115.pdf

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Effective Aug 1 2014

Replacing MR20H40DF commercial temperature grade part with MR20H40CDF industrial temperature grade

To simplify product selection and improve manufacturing efficiency, Everspin will discontinue the MR20H40DF (Commercial grade) and replace it with the MR20H40CDF (Industrial grade).

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Rev. 1 Effective Mar 30 2013

Comparing Technologies FRAM vs. MRAM

Compares FRAM memory technology with Everspin's MRAM technology.

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Rev. 2 Effective Mar 1 2013

Replacing Cypress CY14B104NA BA and ZS nvSRAMs with Everspin MR2A16A MRAM

Replacing the Cypress CY14B104NA-BA/ZS45XI nvSRAM with Everspin's MR2A16Axxx35 MRAM

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technical articles & white papers

Rev. 1.1 Effective Feb 9 2018

MRAM Improvements to Automotive Non-Volatile Memory Storage

Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.

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Rev. 1 Effective Jan 8 2010

Toggle and Spin-Torque MRAM: Status and Outlook

Article by J.M. Slaughter, et.al., of Everspin Technologies

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RoHS / REACH

Effective Mar 26 2019

QUA00417_Everspin Reach Statement_SVHC197_2-25-19.pdf

Everspin Reach Statement - 2019

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Rev. 032718 Effective Mar 27 2018

QUA02364_Everspin_RoHS_compliance.pdf

Everspin RoHS compliance

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Rev. 032718 Effective Mar 27 2018

QUA00417_Everspin Reach Statement 3_27_2018.pdf

Everspin REACH statement

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Rev. 4.20 Effective Dec 16 2016

EICC Product Level Master

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Rev. 4.20 Effective Dec 16 2016

EICC Company Level Master

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Effective Sep 23 2016

Everspin CFSI_CMRT by Product 4.10_09232016.xls

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Effective Sep 23 2016

Everspin CFSI_CMRT Company Level 4.10_09232016.xls

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Rev. 2 Effective Jan 24 2014

No Red Phosphorus content in Everspin products

Red Phosphorus Statement

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