Documents for MR4A08BMA35R

Datasheets

Rev. 8.7 Effective Mar 27 2018

MR4A08B_Datasheet.pdf

Datasheet for MR4A08B, 16 Mb, Parallel IO MRAM

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Product Change Notices (PCNs)

Effective Oct 18 2022

PCN03054 48 ball BGA Package Assembly Site.pdf

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Effective Oct 21 2021

PCN03043_CMOS_Fab_Supplier_Trace Code.pdf

Everspin is adding a character to the trace code on all Everspin products to identify CMOS wafer Fab supplier.

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Rev. 1.0 Effective Jul 15 2021

PCN03041_Adding_SilTerra_as_additional_supplier.pdf

SilTerra as additional CMOS wafer processing site for 16Mb x8/16 and 8Mb x16 BGA products.

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Rev. 1 Effective Feb 9 2017

PCN02967 Moisture Sensitivity Level of the 16Mb MRAM in the 48-BGA Package Upgraded to MSL-3.pdf

The 16Mb MRAM in the 48-BGA is being upgraded from MSL-5 to MSL-3.

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Rev. 1.0 Effective Nov 3 2016

PCN02954 Moisture Sensitivity Level of the 16Mb MRAM in the 48-BGA Package Upgraded to MSL-5.pdf

The moisture sensitivity level for these products was previously stated as MSL-6 as of March 22, 2016 in PCN 02941. This PCN is to notify customers that the moisture sensitivity level is upgraded to MSL-5. This improvement is the result of package materials and process optimization in conjunction with Everspin assembly subcontractor UTAC Dongguan.

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Effective Mar 22 2016

PCN02941 Moisture Sensitivity Level of the 16Mb MRAM in the 48-BGA Package.pdf

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Rev. 1 Effective Nov 15 2014

PCN02370 Everspin is adding ASE-Malaysia as a qualified assembly site

In order to increase capacity and improve supply flexibility, Everspin is adding ASE-Malaysia as a qualified assembly site for 16Mb MRAM products in the 48-BGA package.

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Rev. 1 Effective Oct 15 2014

PCN02756 Adding ASE Malaysia as a Qualfied Assembly Site on 16Mb BGA Product_final_C.pdf

Everspin is adding ASE-Malaysia as a qualified assembly site for 16Mb MRAM products in the 48-BGA package. 

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Rev. 1 Effective Dec 30 2011

PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING

Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.

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packaging

Rev. 2.2 Effective Apr 13 2018

Everspin_48-ball BGA_Package_Guide.pdf

Thermal Resistance, Recommended reflow profile, package outline drawings for all 48-ball FBGA packages from Everspin

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application notes

Effective Jun 12 2020

EST 2130 Comparing_Technologies_FRAM_vs_MRAM_AppNote.pdf

Comparing MRAM to FRAM

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Rev. 1.0 Effective May 27 2020

EST 2902 Replacing the Cypress CY62168EV30LL-45BVXI MoBL SRAM with Everspin MR4A08B MRAM.pdf

EST 2902 Replacing the Cypress CY62168EV30LL-45BVXI MoBL SRAM with Everspin MR4A08B MRAM

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Rev. 1 Effective Sep 28 2015

EST02880 Magnetic Immunity for Everspin MRAM 073115.pdf

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Rev. 1 Effective Mar 1 2013

Replacing the Cypress CY14B108LA-xx 8Mb nvSRAM with Everspin's MR4A08Bxxx 16Mb MRAM

Replacing 8Mb nvSRAM with 16Mb MRAM in TSOP2 and FBGA packages.

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Rev. 1 Effective Feb 1 2012

Approximating the Magnetic Field When Using Everspin MRAM

How to create an approximation of the magnetic field strength surrounding an MRAM

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technical articles & white papers

Rev. 1.0 Effective May 5 2020

Cobham_MRAM_Qual_and_Reliability_paper 2020.pdf

Cobham Toggle MRAM Quality and Reliability White Paper

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Rev. 1.0 Effective Mar 30 2020

Toggle MRAM Quality and Reliability Paper

A white paper discussing the reliability and qualification for Toggle MRAM components by Cobham

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Rev. 1.1 Effective Feb 9 2018

MRAM Improvements to Automotive Non-Volatile Memory Storage

Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.

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Rev. 1 Effective Jan 8 2010

Toggle and Spin-Torque MRAM: Status and Outlook

Article by J.M. Slaughter, et.al., of Everspin Technologies

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RoHS / REACH

Rev. 1.2 Effective Oct 24 2023

RMI_EMRT_1.2_Everspin Technologies_10-24-2023_ Product level.xlsx

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Rev. 6.31 Effective Oct 24 2023

RMI_CMRT_6.31_Everspin Technologies_10-24-2023_ Product level.xlsx

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Rev. 1.0 Effective Jan 26 2023

Everspin_RoHS_Red_Phosphorus_Compliance.pdf

RoHS Red Phosphorous statement

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Rev. 6.1 Effective Mar 31 2022

RMI_CMRT_6.1_Everspin_Company Level_March 31 2022.xlsx

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Effective Mar 2 2022

QUA00417_Everspin_reach.pdf

Everspin Technologies REACH Statement

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Effective Mar 2 2022

QUA02364_EverspinRoHS.pdf

Everspin Technologies RoHS Statement

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Rev. 1.0 Effective May 29 2020

Everspin Conflict Minerals Report Fiscal 2019.pdf

Everspin Conflict Minerals Report Fiscal 2019

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Rev. 4.20 Effective Dec 16 2016

EICC Product Level Master

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Rev. 4.20 Effective Dec 16 2016

EICC Company Level Master

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Effective Sep 23 2016

Everspin CFSI_CMRT by Product 4.10_09232016.xls

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Effective Sep 23 2016

Everspin CFSI_CMRT Company Level 4.10_09232016.xls

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