Datasheets
MR25H256-MR25H256A_Datasheet.pdf
Datasheet for MR25H256/MR25H256A, 256K, Serial SPI MRAM
Product Change Notices (PCNs)
PCN03043_CMOS_Fab_Supplier_Trace Code.pdf
Everspin is adding a character to the trace code on all Everspin products to identify CMOS wafer Fab supplier.
PCN02996 Add ChipMOS as a Subcontractor Assembly Site for the DFN package
PCN 02996 - Add ChipMOS as a subcontractor assembly site
PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING
Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.
packaging
Everspin DFN Package Guide Rev1.5.pdf
Everspin DFN package guide
EST02153_Everspins Small Flag DFN Replaces SOIC Package_AppNote_Rev5 041413.pdf
product notes
PNT02190 8-pin DFN Package with Reduced Exposed Pad Size Recommended for New Designs
PNT02190 8-pin DFN Package with Reduced Exposed Pad Size Recommended for New Designs
application notes
EST_2917_Everspin_MRAM_Optimizes_System_Energy_Consumption.pdf
Everspin MRAM Optimizes System Energy Consumption (Reprint of article)
EST 2130 Comparing_Technologies_FRAM_vs_MRAM_AppNote.pdf
Comparing MRAM to FRAM
Approximating the Magnetic Field When Using Everspin MRAM
How to create an approximation of the magnetic field strength surrounding an MRAM
EVERSPIN's New 2mm Exposed Pad DFNPackage Meets Both SOIC-8 and DFN8 PCB Layouts
Replacing SRAM in SOIC or DFN package with MRAM in DFN
Quad SPI Evaluation Boards
technical articles & white papers
Cobham_MRAM_Qual_and_Reliability_paper 2020.pdf
Cobham Toggle MRAM Quality and Reliability White Paper
Toggle MRAM Quality and Reliability Paper
A white paper discussing the reliability and qualification for Toggle MRAM components by Cobham
MRAM Improvements to Automotive Non-Volatile Memory Storage
Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.
Toggle and Spin-Torque MRAM: Status and Outlook
Article by J.M. Slaughter, et.al., of Everspin Technologies
VHDL model
MR25H256 VHDL Model
This is the VHDL model of the MR25H256. This is a high level abstraction of this product. The following is contained in the download:
1. Readme_MR25H256
2. MR25H256.vhdl - Device Model
3. Package_Utility - Standard Conversion Utilities
4. Benchtest.vhdl - Top Level Test Bench
5. MR25H256_Driver.vhdl - Sample Test Vectors used for the Verification
6. MR25H256.txt - Memory Initialization File
RoHS / REACH
RMI_EMRT_1.3_Everspin Technologies_07-29-2024_ Company level.xlsx
RMI_EMRT_1.3_Everspin Technologies_07-29-2024_ Product Level.xlsx
RMI_CMRT_6.4__Everspin Technologies_06.21.2024_ Product level.xlsx
RMI_EMRT_1.3_Everspin Technologies_5-13-2024_ Product level.xlsx
RMI_CMRT_6.4__Everspin Technologies_05.03.2024_ Company level.xlsx
RMI_CMRT_6.31_Everspin Technologies_10-24-2023_ Product level.xlsx
Everspin_RoHS_Red_Phosphorus_Compliance.pdf
RoHS Red Phosphorous statement
Everspin Conflict Minerals Report Fiscal 2019.pdf
Everspin Conflict Minerals Report Fiscal 2019