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Documents for MR256D08BMA45
Datasheets
MR256D08B_Datasheet.pdf
Datasheet for MR256D08B, 256 Kb, Parallel IO, Dual Power Supply MRAM
Product Change Notices (PCNs)
PCN03043_CMOS_Fab_Supplier_Trace Code.pdf
Everspin is adding a character to the trace code on all Everspin products to identify CMOS wafer Fab supplier.
PCN02257 Everspin adds UTAC Dongguan (UDG) as a qualified source of the BGA package
Everspin adds UTAC Dongguan (UDG) as a qualified source of the BGA package
PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING
Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.
packaging
Everspin_48-ball BGA_Package_Guide.pdf
Thermal Resistance, Recommended reflow profile, package outline drawings for all 48-ball FBGA packages from Everspin
application notes
EST 2130 Comparing_Technologies_FRAM_vs_MRAM_AppNote.pdf
Comparing MRAM to FRAM
EST02852 Replacing the Cypress CY14V256LA_BA35 nvSRAM with Everspins MR256D08BMA45 MRAM 032015.pdf
Approximating the Magnetic Field When Using Everspin MRAM
How to create an approximation of the magnetic field strength surrounding an MRAM
technical articles & white papers
Cobham_MRAM_Qual_and_Reliability_paper 2020.pdf
Cobham Toggle MRAM Quality and Reliability White Paper
Toggle MRAM Quality and Reliability Paper
A white paper discussing the reliability and qualification for Toggle MRAM components by Cobham
MRAM Improvements to Automotive Non-Volatile Memory Storage
Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.
Toggle and Spin-Torque MRAM: Status and Outlook
Article by J.M. Slaughter, et.al., of Everspin Technologies
RoHS / REACH
RMI_EMRT_1.3_Everspin Technologies_07-29-2024_ Company level.xlsx
RMI_EMRT_1.3_Everspin Technologies_07-29-2024_ Product Level.xlsx
RMI_CMRT_6.4__Everspin Technologies_06.21.2024_ Product level.xlsx
RMI_EMRT_1.3_Everspin Technologies_5-13-2024_ Product level.xlsx
RMI_CMRT_6.4__Everspin Technologies_05.03.2024_ Company level.xlsx
RMI_CMRT_6.31_Everspin Technologies_10-24-2023_ Product level.xlsx
Everspin_RoHS_Red_Phosphorus_Compliance.pdf
RoHS Red Phosphorous statement
Everspin Conflict Minerals Report Fiscal 2019.pdf
Everspin Conflict Minerals Report Fiscal 2019