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Documents for MR10Q010MB
Datasheets
Product Change Notices (PCNs)
PCN03043_CMOS_Fab_Supplier_Trace Code.pdf
Everspin is adding a character to the trace code on all Everspin products to identify CMOS wafer Fab supplier.
PCN02997 Add UTAC Dongguan as a Subcontractor Assembly Site for the BGA-24 package
PCN02997 Add UTAC Dongguan as a Subcontractor Assembly Site for the BGA-24 package
PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING
Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.
packaging
Everspin_24-ball_BGA_MRAM_Packages.pdf
24-ball BGA Package Guide for Everspin Toggle MRAM products
application notes
EST_2916_Replacing_Cypress_CY14V101QS_nvSRAM_with_Everspin_MR10Q010.pdf
EST 2916 Replacing the Cypress CY14V101QS nvSRAM with Everspin’s MR10Q010 MRAM
EST 2130 Comparing_Technologies_FRAM_vs_MRAM_AppNote.pdf
Comparing MRAM to FRAM
Approximating the Magnetic Field When Using Everspin MRAM
How to create an approximation of the magnetic field strength surrounding an MRAM
Quad SPI Evaluation Boards
MR10Q010 Quad SPI Evaluation Board Guide
MR10Q010 Quad SPI Evaluation Board Guide
MR10Q010 Quad SPI Evaluation Board Guide Revision 1 022416.pdf
MR10Q010 Quad SPI Evaluation Board Guide Revision 1
MR10Q010-EVAL Board Layout and Schematic.pdf
MR10Q010 Evaluation Board Layout and Schematic
technical articles & white papers
Cobham_MRAM_Qual_and_Reliability_paper 2020.pdf
Cobham Toggle MRAM Quality and Reliability White Paper
Toggle MRAM Quality and Reliability Paper
A white paper discussing the reliability and qualification for Toggle MRAM components by Cobham
MRAM Improvements to Automotive Non-Volatile Memory Storage
Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.
Toggle and Spin-Torque MRAM: Status and Outlook
Article by J.M. Slaughter, et.al., of Everspin Technologies
IBIS Model
MR10Q010 IBIS File for 16-SOIC.ibs
IBIS file for part MR10Q010CSC in 16-SOIC. Revision 0, dated March 23, 2015
verilog model
MR10Q010 Quad SPI MRAM Verilog Model
This is the VERILOG model of the MR10Q010. MR10Q010.V is the abstracted model of a 128K x 8 MRAM. The following is contained in the download:
1. Readme_MR10Q010 - Overview
2. MR10Q010.V - MR10Q010 1Mb QSPI MRAM behavioral model
3. Config_MR10Q010.VH - parameters file for the model
4. sim/run_sim - script to run simulation using NC-Verilog
5. sim/tb_mr10q010.v - test bench
RoHS / REACH
RMI_EMRT_1.3_Everspin Technologies_07-29-2024_ Company level.xlsx
RMI_EMRT_1.3_Everspin Technologies_07-29-2024_ Product Level.xlsx
RMI_CMRT_6.4__Everspin Technologies_06.21.2024_ Product level.xlsx
RMI_EMRT_1.3_Everspin Technologies_5-13-2024_ Product level.xlsx
RMI_CMRT_6.4__Everspin Technologies_05.03.2024_ Company level.xlsx
RMI_CMRT_6.31_Everspin Technologies_10-24-2023_ Product level.xlsx
Everspin_RoHS_Red_Phosphorus_Compliance.pdf
RoHS Red Phosphorous statement
Everspin Conflict Minerals Report Fiscal 2019.pdf
Everspin Conflict Minerals Report Fiscal 2019