Datasheet for MR0D08B, 1 Mb, Parallel IO, Dual Power Supply MRAM
Product Change Notices (PCNs)
PCN02257 Everspin adds UTAC Dongguan (UDG) as a qualified source of the BGA package
Everspin adds UTAC Dongguan (UDG) as a qualified source of the BGA package
PCN20120628_0 A - Everspin qualifies ASE Malaysia as an assembly source for 256Kb and 1Mb MRAM in the BGA package
Everspin adds ASE Malaysia as a qualified source for BGA package assembly of 256Kb and 1Mb MRAM.
PCN1893 ALTERNATIVE FORMAT FOR TRACE CODES ON PACKAGE MARKING
Beginning December 30, 2011, Everspin may use an alternative Trace Code marking format interchangeably with the existing format. The existing format identifies fabrication site, assembly site, final test site and wafer lot, year and work week. The alternative format will identify the assembly site and wafer lot, year and work week. Affects all Everspin products and packages.
Burn-In, Final Test transferred to UTAC Taiwan for 256Kb, 1Mb, 4Mb Parallel IO and 256Kb and 1Mb Serial SPI MRAM
Burn-in, final test and end of line services are transferred from UTAC Singapore to UTAC Taiwan.
Thermal Resistance, Recommended reflow profile, package outline drawings for all 48-ball FBGA packages from Everspin
EST 2130 Comparing_Technologies_FRAM_vs_MRAM_AppNote.pdf
Comparing MRAM to FRAM
EST02880 Magnetic Immunity for Everspin MRAM 073115.pdf
Replacing the Cypress CY14V101LA-BA45 nvSRAM with Everspin's MR0D08BMAxx MRAM
The Everspin MR0D08BBMA45 MRAM memory is pin and timing compatible with the Cypress CY14V101LA-BA45 nvSRAM.
Using a Single Vdd pin for the MR0D08BMA45
Describes the use of a single VDD supply for the MR0D08B MRAM Family in 48-BGA packages.
Approximating the Magnetic Field When Using Everspin MRAM
How to create an approximation of the magnetic field strength surrounding an MRAM
technical articles & white papers
Cobham Toggle MRAM Quality and Reliability White Paper
Toggle MRAM Quality and Reliability Paper
A white paper discussing the reliability and qualification for Toggle MRAM components by Cobham
MRAM Improvements to Automotive Non-Volatile Memory Storage
Automotive powertrain modules use flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles. MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust. This paper demonstrates using off-board MRAM devices with a next generation of powertrain microprocessor. The prototype boards integrating the latest powertrain microcontroller, with the Everspin MRAM MRA16A (2 pcs of x16 bits) and MR2xH50 (@ a SCK 40MHz) chips were created. An investigation was performed evaluating the MRAM capabilities for storing and retrieving data during simulated key-off and key-on events.
Toggle and Spin-Torque MRAM: Status and Outlook
Article by J.M. Slaughter, et.al., of Everspin Technologies
RoHS / REACH
Everspin Technologies REACH Statement
Everspin Conflict Minerals Report Fiscal 2019.pdf
Everspin Conflict Minerals Report Fiscal 2019
Everspin Technologies RoHS Statement
EICC Product Level Master
EICC Company Level Master
Everspin CFSI_CMRT by Product 4.10_09232016.xls
Everspin CFSI_CMRT Company Level 4.10_09232016.xls
RoHS Red Phosphorous statement