MTJ Storage Element

Everspin MRAM products employ a one transistor, one magnetic tunnel junction (MTJ) memory cell for the storage element. The MTJ is composed of a fixed magnetic layer, a thin dielectric tunnel barrier and a free magnetic layer. When a bias is applied to the MTJ, electrons that are spin polarized by the magnetic layers traverse the dielectric barrier through a process known as tunneling.

The MTJ device has a low resistance when the magnetic moment of the free layer is parallel to the fixed layer and a high resistance when the free layer moment is oriented anti-parallel to the fixed layer moment.