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September 15, 2016 press

Everspin’s ST-MRAM Technology to be deployed in GLOBALFOUNDRIES 22FDX eMRAM Platform

Everspin’s ST-MRAM with pMTJ will be available as discrete memory manufactured by GLOBALFOUNDRIES and as embedded memory under license to GLOBALFOUNDRIES.
Everspin Technologies, Inc., has announced that its most advanced ST-MRAM technology is available as an embedded memory through its relationship with GLOBALFOUNDRIES. With the GLOBALFOUNDRIES announcement of 22FDX eMRAM based on Everspin’s ST-MRAM technology (available for download below), customers will have access to memory that offers the benefit of working memory (SRAM) combined with code storage (Flash), enabling system designers to take advantage of our latest NVM memory technology.
Download the Everspin press release
Download the GLOBALFOUNDRIES press release
September 10, 2016 releases

Everspin Technologies Demonstrates World's Fastest SSD with ST-MRAM

GLOBAL FOUNDRIES Technology Conference 2016
San Jose, CA - September 15, 2016

Everspin will be demonstrating the world’s fastest SSD, with continuous write operations of 1.5 Million IOPS, using our latest perpendicular ST-MRAM technology.  
Visitors to the conference Exhibit Room can witness a live demonstration of a PCIe NVMe SSD using Everspin’s 256Mb DDR3 perpendicular ST-MRAM manufactured by GLOBAL FOUNDRIES.
Everspin and GLOBAL FOUNDRIES have been in partnership since 2014, bringing ST-MRAM to commercial production in advanced 300mm wafer technology.
Register
August 15, 2016

MRAM Improvements to Automotive Non-Volatile Memory Storage

A new White Paper on an important application of MRAM to automotive environments, by Chinh Nguyen, Dona Burkard, Kelvin Dobbins (Ford Motor Company), Chuck Bohac (Everspin Technologies).
Automotive powertrain modules use Flash memory technology to retain critical control and diagnostic information during power off (keep-alive memory (KAM) and non-volatile memory (NVM)). Complex software must be designed to maximize the lifecycle of these devices because they have a limited number of write cycles.  MRAM (Magneto resistive Random Access Memory) has the potential to eliminate this complexity and make the process of managing KAM and NVM easier and more robust.
Read the white paper
August 9, 2016 press

Aupera Reveals an MRAM-enabled M.2 Storage Module based on Everspin’s newest 256Mb Perpendicular Spin Torque MRAM

The Aup-AXL-M128 offers a high speed, low latency storage tier for Flash Arrays
Chandler, AZ, August 9, 2016 – Everspin Technologies and Aupera Technologies Inc., today announced the launch of the world’s first M.2 storage module, the Aup-AXL-M128, based on Everspin’s 256Mb perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. 
Read the press release
 
 
August 5, 2016 releases

Everspin to show world's fastest SSD

by Robin Harris for Storage Bits, August 4, 2016
At the Flash Memory Summit, Everspin will demo what it bills as the world's fastest SSD, a single PCIe card capable of 1.5 million random 4k writes per second. Since most flash SSD-based arrays can't manage 1 million reads per second, yeah, it's fast.
Read the entire article
August 3, 2016 press

Everspin 256Mb ST-MRAM with Perpendicular MTJ Sampling

Everspin Technologies will be sampling the world’s first MRAM product using perpendicular magnetic tunnel junction (pMTJ) based ST-MRAM. This 256Mb DDR3 product is the highest density commercially available perpendicular STMRAM in the market.
Read the August press release
 
May 12, 2016 releases

New non-volatile memory technologies poised to reshape system and application design

By Kurt Marko, Digonomica
New non-volatile memory technology is showing promise beyond the theoretical and development lab.
Business and IT execs can be excused for nodding off whenever the topic turns to component technologies and system internals, but occasionally the ostensibly big new thing turns out to be broadly significant.
 


Read the entire article
May 12, 2016 releases

Everspin's MRAM shoots for the NVM crown

By Robin Harris for Storage Bits
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Read the entire article
April 25, 2016 releases

Why MRAM Hasn't Killed DRAM

By Robin Harris for Storage Bits, April 20, 2016
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.
Read the entire article
April 18, 2016 releases

Everspin Aims MRAM at SSD Storage Tiers


TORONTO, April 18, 2016  – Gary Hibson of EE Times interviews Phil LoPresti, CEO of Everspin Technologies and discusses how MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
Read the entire interview from EE Times
 
April 13, 2016 press

Everspin Releases Fastest And Most Reliable Non-Volatile Storage Class Memory

April 13, 2016 - Everspin Technologies announced today that it is shipping 256Mb ST-MRAM samples to global customers, enabling new product solutions using a true MRAM-based Storage Class Memory (SCM). The EMD3D256M ST-MRAM product family breaks the record for the highest density commercial MRAM currently available in the market.
Read the entire press release 
 
April 8, 2016 press

Spin Torque MRAM Showcased as the First Storage Class Memory


Chandler, AZ, April 7, 2016 Everspin Technologies today announced that IBM has demonstrated Everspin’s latest Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. The demonstration showed show how Everspin’s DDR3 ST-MRAM operates as persistent memory, accelerating storage and server applications.
Read the entire press release