MRAM Replaces FRAM (FeRAM)

Why Replace a Ferroelectric RAM with an MRAM?

  • MRAM has unlimited endurance and infinite Read/Write cycles; FRAM Reads are destructive and eventually lead to wear-out.
  • MRAM Read/Write Cycle and Access times are faster, 35ns vs. 60ns access time, 35ns vs. 115ns cycle time.
  • MRAM is not subject to imprint.
  • MRAM provides data retention for 20 years.
  • MRAM is scalable. Toggle MRAM available up to 16Mb. FRAM is stalled at 4Mb.


FRAM, FeRAM or Ferroelectric Random Access Memory uses a ferroelectric capacitor architecture that employs ferroelectric materials as storage elements. These materials have an intrinsic electric dipole switched into opposite polarities with an external electric field. Switching the ferroelectric polarization states requires the movement of the dipole located within an oxygen octahedron in response to an electric field. This movement can be impeded by a free electric charge or other ionic defects built-up over time and temperature. Such efects cause the dipoles to relax over time leading to fatigue and failure.

Magnetoresistive RAM (MRAM)

Magnetoresistive RAM is inherently non-volatile, has unlimited endurance with no known wear-out mechanism and is not subject to data loss at higher temperature operating conditions.

  • Everspin MRAM is available in a functional equivalent or drop-in replacement for most FRAM devices.
  • Immediate (<1ns) Power-off with no loss of data.
  • Unlimited read and write cycle endurance.
  • Truly Asynchronous SRAM compatible speeds and cycle times.
  • 20-Year data retention with no cycling dependence.
  • No wear-out concerns.

The Everspin Technologies Toggle MRAM Product Family

Everspin MRAM is available in x8, x16, Serial SPI, and Quad Serial SPI interface configurations. Click on the Product Family below for more detail.