
MISSION-CRITICAL PERSISTENCE
Everspin PERSYST™ MRAM: The New Standard for Aerospace, Satellites and Drones
The Frontier of Electronics Reliability
From Low-Earth Orbit (LEO) satellites to high-performance tactical drones, aerospace systems demand memory technologies that can operate reliably in harsh and unpredictable environments. Mission‑critical applications — including flight-control systems, avionics, telemetry, satellite payload processing and guidance electronics — require deterministic performance, long data retention and resilience to radiation‑induced faults. Everspin’s PERSYST™ STT-MRAM (spin-transfer torque MRAM) provides the “universal memory” these applications require: combining the speed of SRAM and the nonvolatility of flash, but without the wear-out mechanisms or radiation vulnerabilities of either.
Product Spotlight: PERSYST™ MRAM Family
The Everspin PERSYST™ family is engineered for high-throughput, low-latency performance in embedded systems and IoT.
· High Throughput: Support for quad and octal SPI (xSPI) interfaces with clock frequencies up to 200 MHz
· Massive Bandwidth: Achieves up to 400MB/s sustained read/write throughput, enabling rapid data logging and instant-on boot capabilities
· Capacity Range: Scalable from 4Mb to 128Mb to fit everything from small sensor nodes to complex flight computers
· JEDEC xSPI Compliant: Seamlessly replaces serial NOR flash while providing significantly higher performance
· Long data retention in powered or unpowered scenarios
· Deterministic write performance with no need for wear leveling
How MRAM Benefits Mil-Aero & Space Applications
1. Radiation Immunity: Unlike flash or SRAM, which store data as electrical charges, MRAM stores data as magnetic states. This makes it inherently resistant to single-event upsets (SEU) and single-event latch-up (SEL), common in space.
2. Unlimited Endurance: Offers 1014+ write cycles, effectively unlimited for the life of any mission. This eliminates the need for complex wear-leveling software required by NOR flash.
3. Wide Operating Range: Available in Industrial (-40°C to +85°C), Extended
(-40°C to +105°C) and AEC-Q100 Grade 1 (-40°C to +125°C), ensuring stability during atmospheric reentry or high-altitude flight.
4. Low Power Consumption: Minimal active power and deep power-down modes (<50µA) extend the battery life of drones and the power budget of solar-dependent satellites.
5. High-Speed Write Performance: Unlike traditional flash memory, MRAM requires no erase cycle before writing. It operates at the full speed of the system bus, significantly reducing latency compared with NOR flash.
6. Data Integrity: The high-speed capability enables “atomic writes,” ensuring that data is fully committed to memory instantly. This prevents data corruption or partial writes during sudden power loss, a common vulnerability in systems using battery-backed SRAM or NOR flash. Additionally, no external ECC is required.
Memory Comparison: Why MRAM Wins
Feature | Everspin MRAM | FRAM | nvSRAM | NOR Flash |
Write Speed | Nanoseconds | Microseconds | Nanoseconds | Milliseconds |
Endurance | Unlimited | High | Unlimited | Limited (100K) |
Erase Required | No | No | No | Yes (slow) |
Data Retention | 20+ years | 10 years | 20 years | 20 years |
SEU Cell Sensitivity | Zero (immune) | Virtually zero | High | Extremely low |
Storage Mechanism | Magnetic Tunnel Jct | Ferroelectric crystal | CMOS SRAM + SONOS | Floating gate |
SEL Threshold (MeV . cm2/mg) | >61.4 | 50–100 | <40 (COTS) | 50–80 |
Primary Failure Mode | Soft errors: Transient logic hits only | Logic errors: Soft errors in peripheral CMOS | Bit flips: Corruption of active SRAM array | SEFI: Control logic/charge pump disruptions |
Density | High (up to 128Mb+) | Low (up to 16Mb) | Moderate | Very high |
MRAM Use Cases for Aerospace Applications
· Satellite and space-borne electronics requiring radiation‑tolerant storage for command sequences and critical telemetry data with high integrity
· Avionics data logging for continuous high-speed data logging without memory wear-out
· Mission‑critical flight-control system memory
· Black box and persistent crash‑survivable memory
· Storing bitstreams for instant-on capability and radiation-hardened booting
· Guidance, navigation and control processors
· Telemetry and communication subsystems
· Real-time sensor fusion and image processing buffering with low power draw
Sample Applications
· Low-Earth Orbit (LEO)
· Satellite flight computers
· Black box recorders
· FPGA configuration
· Tactical drone
· Navigation and flight safety
· Engine propulsion control
· Battery management systems
· Fly-by-wire architectures
· Avionics
· eVTOL
“Everspin’s MRAM has proven to be an optimal solution for demanding space exploration and LEO satellite missions. The addition of the HR version gives us the option to broaden the operating range of our systems.” — Billy Wahng, CTO, Astro Digital
Case Study: MRAM as a Mission-Critical Configuration Memory for Modern Avionics
Leading aerospace and avionics manufacturers rely on Everspin MRAM as a robust data logging and configuration storage solution for both manned and unmanned aircraft systems. MRAM’s inherent nonvolatility—without the need for batteries or large capacitor banks—combined with its radiation immunity, unlimited write endurance and high-speed read/write performance, provides a unique reliability profile unmatched by other nonvolatile memories.
In high-reliability flight platforms, these attributes translate directly into improved system robustness, reduced maintenance complexity and guaranteed data persistence across mission cycles.
As avionics architectures evolve, next-generation FPGAs now include millions of logic elements, driving exponential growth in configuration file sizes. Traditionally, these configuration images are stored in external NOR flash and loaded into the FPGA over SPI. While NOR flash delivers acceptable read performance—especially under the JEDEC xSPI standard with sustainable read bandwidths up to 400 Mb/s—it falls short in write performance due to its slow, page-based programming and erase before write requirements.
These limitations are increasingly incompatible with modern avionics demands, including:
· frequent configuration updates
· high-availability systems requiring fast, nonvolatile writes
· real-time logging of performance parameters and mission-critical states
· environments intolerant of data corruption or wear-out mechanisms
In contrast, MRAM enables fast, simple, byte-addressable writes with unlimited endurance, eliminating the complexity and performance bottlenecks inherent in NOR flash. Its combination of high-speed reads, deterministic write behavior and extreme reliability makes MRAM the ideal nonvolatile memory for storing FPGA configuration data, system settings and persistent operational logs.
Summary
Everspin MRAM offers a compelling solution for aerospace applications by providing nonvolatile, high‑endurance, radiation‑tolerant memory with deterministic behavior and low power requirements. Compared with flash, MRAM eliminates the limitations associated with charge‑based storage, making it ideal for systems where reliability and survivability are paramount.
Reference Documentation & Reports
1) NASA / NTRS SEE Test Report: Micron MT25QU512ABB NOR Flash NOR Flash (Micron)
2) Everspin Tech MRAM for Radiation-hard Markets Everspin MRAM
3) Texas Instruments SEE Test Report: MSP430FR5969-SP FRAM FRAM (TI/Ramtron)
4) NASA NEPP 2019 NEPP ETW: Radiation Testing of Advanced NVM MRAM, ReRAM, nvSRAM
5) NASA NEPP Radiation Effects Test Guideline for Nonvolatile Memories General NVM Guidelines
6) Infineon / Cypress F-RAM, nvSRAM, and MRAM Magnetic Field Immunity FRAM vs. nvSRAM vs. MRAM
7) JPL PERSYST High-Rel MRAM SEE Evaluation Everspin MRAM
8) MRAM Source: PEAL Radiation Test Report: EM064LX STT-MRAM SEE Characterization, Everspin Technologies (February 2026).
· Key Finding: Confirmed SEL immunity up to 61 MeV * cm^2/mg at ambient temperature and high resilience to Total Ionizing Dose (TID) up to 1 Mrad (Si).
9) NOR Flash Source: NASA/TM-20250005202: Single-Event Effects Test Report Micron MT25QU512ABB Serial NOR Flash Memory, NASA Goddard Space Flight Center (May 2025).
· Key Finding: Demonstrates "hard" failure modes and significant SEFI (Single Event Functional Interrupt) risks starting at much lower energy levels (LET < 10 MeV * cm^2/mg) and parametric degradation after ~30 krad (Si).
· https://ntrs.nasa.gov/api/citations/20250005202/downloads/TestReport_SEE...
10) NASA Goddard Space Flight Center: TID, SEE and Radiation Induced Failures in Advanced Flash Memories (NASA-GSFC Reference).
· https://nepp.nasa.gov/docuploads/4f678de9-9f55-4e2e-863df9c9f35db603/w-4_nguyen-flash%20memory.pdf
· MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report
· https://ntrs.nasa.gov/api/citations/20205006472/downloads/Topper-TR-17-0...
Contact Information
For more information on PERSYST™ MRAM and high-reliability solutions, please contact our sales office in your region:
Everspin Technologies, Inc. The MRAM Company™ www.everspin.com