semiconductor packaging news
March 2, 2026 press

VIEWPOINT 2026: Sanjeev Aggarwal, CEO, Everspin Technologies

In this Semiconductor Packaging News viewpoint, Everspin Technologies CEO Sanjeev Aggarwal outlines how 2026 is reshaping the semiconductor memory market, with a strong shift toward non-volatile memory solutions where performance, reliability, and power efficiency matter more than cost per bit. Driven by growth in edge AI computing, industrial automation, and aerospace applications, modern memory decisions increasingly prioritize instant boot capability, data retention, and resilience after power loss.
electronica plus
March 9, 2026 press

MRAM, Le Memorie Che Non Dimenticano

Everspin CEO Sanjeev Aggarwal spoke with Electtronica Plus, sharing his predictions for the 2026 semiconductor memory landscape. The industry is increasingly defined by a move away from cost-per-bit thinking toward non-volatile memory performance factors such as reliability, speed, and power efficiency. The expansion of edge AI workloads, industrial automation systems, and aerospace platforms is pushing demand for persistent memory that can deliver fast wake-up times and preserve data integrity after unexpected power loss.
In Business
March 30, 2026 press

What Happens when Memory Can’t Keep Up

Rising global demand for AI data center memory is tightening semiconductor supply chains, driving significant increases in memory costs across consumer electronics, automotive systems, and industrial devices. As manufacturers prioritize high-bandwidth memory for artificial intelligence infrastructure, availability of components like NOR flash and other embedded memory solutions is becoming more constrained, creating pricing volatility and long-term supply uncertainty expected to persist through 2027. In response, MRAM solutions are emerging as a NOR flash alternative, offering non-volatile performance, system compatibility, and more stable supply chain options for embedded and mission-critical applications.
mram info
March 10, 2026 press

Everspin introduces a new MRAM code and data unified memory for embedded systems

Everspin Technologies’ new UNISYST MRAM platform introduces a unified embedded memory architecture that integrates code and data storage into a single high-density, non-volatile solution for edge AI, industrial, automotive, and mission-critical systems. As NOR flash approaches performance and scaling limits below 40nm process nodes, the company is extending its MRAM roadmap with UNISYST, offering densities from 128Mb to 2Gb and leveraging high-speed xSPI interfaces for improved embedded performance.
semicon
March 20, 2026 press

Everspin Technologies Launches UNISYST MRAM Unified Memory Platform

With its UNISYST MRAM platform, Everspin Technologies is introducing a unified non-volatile memory architecture that combines code and data storage to target NOR flash replacement across automotive, aerospace, industrial, and edge AI embedded systems. Built on the company’s PERSYST MRAM foundation, the solution scales from 128Mb to 2Gb and leverages high-speed xSPI interfaces to improve boot times, accelerate firmware updates, and enhance overall system responsiveness.
EE herald
March 20, 2026 press

Everspin Launches UNISYST MRAM Family as Unified Code-and-Data Memory for Edge AI and Mission-Critical Systems

The UNISYST MRAM family from Everspin Technologies represents a new unified memory architecture combining code and data storage in a single high-density non-volatile solution. Targeting edge AI and mission-critical embedded applications, it builds on the company’s PERSYST platform and enables migration from existing MRAM devices without software or hardware changes.
ee Designit
March 18, 2026 press

Everspin Introduces UNISYST MRAM to Unify Code and Data in Embedded Systems

Everspin Technologies’ UNISYST MRAM platform introduces a unified approach to embedded memory by consolidating code execution and data storage into a single non-volatile device. Targeting NOR flash limitations in high-growth areas like edge AI and industrial computing, it extends MRAM into higher-density applications with minimal system redesign.
tech day
March 10, 2026 press

Everspin unveils UNISYST MRAM for unified edge AI memory

A new MRAM solution from Everspin Technologies, the UNISYST family integrates code storage and data memory into a unified non-volatile architecture for embedded applications. Built on the company’s established PERSYST technology, it provides a scalable path to higher-density MRAM while simplifying migration from serial MRAM platforms.
EE electronics era
March 10, 2026 press

Everspin Announced New Generation of Unified Memory for Embedded Systems

Everspin Technologies’ UNISYST MRAM family delivers a unified non-volatile memory solution that integrates code and data storage into one architecture for embedded systems. Designed as an evolution of the PERSYST platform, it supports higher-density MRAM, standard xSPI interfaces, and seamless integration into existing designs without major system changes.
electronic product design test
March 15, 2026 press

Ground-Breaking MRAM Solutions Bring Together Code Storage & Data Memory Facets

The UNISYST MRAM family from Everspin Technologies introduces a unified embedded memory architecture that integrates code storage and data handling into a single high-performance MRAM device. Rather than relying on traditional NOR flash, the solution delivers improved endurance, faster read and write speeds, and flexible density scaling for applications in automotive, industrial, aerospace, and edge AI systems.
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