EMD4E001G - 1Gb Spin-transfer Torque MRAM

The EMD4E001G is the newest and highest capacity STT-MRAM device from Everspin, targeted at enterprise and computing applications that need higher capacity, low latency, persistence and endurance. The larger density 1Gb part offers more effective management of I/O streams, creating a greater level of latency determinism and allowing storage OEMs to significantly improve quality of service of their products.  Similar benefits can also be achieved using the 1Gb STT-MRAM device as a persistent data buffer in SSDs, storage and fabric accelerators, computational storage, and other applications.

  • ST-DDR4 interface for easy integration into storage, computing, and networking applications
  • 667MHz speed option, 1333MT/s per pin transfer rate
  • JEDEC-compatible BGA package
Download datasheet

Search Our Products

Product Family
Avail
Interface
Interface Type
Family Page
Technology
Density
I/O Width
Operating Temp
Speed
Vdd
Package
Product Family Orderable P/N Technology Avail Interface Interface Type Density I/O Width Operating Temp Speed Vdd Package Where to Buy Documents Product Inquiry Sample Request
PERSYST EMD4E001G08G1-150CAS2 DDR, STT MRAM MP Parallel DDR4 1Gb 8-bit 0 to 85C 667MHz 1.2 BGA-78
PERSYST EMD4E001G08G1-150CAS2R DDR, STT MRAM MP Parallel DDR4 1Gb 8-bit 0 to 85C 667MHz 1.2 BGA-78
PERSYST EMD4E001G16G2-150CAS2 DDR, STT MRAM MP Parallel DDR4 1Gb 16-bit 0 to 85C 667MHz 1.2 BGA-96
PERSYST EMD4E001G16G2-150CAS2R DDR, STT MRAM MP Parallel DDR4 1Gb 16-bit 0 to 85C 667MHz 1.2 BGA-96
PERSYST EMD4E001G08G1-150CAS1 DDR, STT MRAM NR Parallel DDR4 1Gb 8-bit 0 to 85C 667MHz 1.2 BGA-78
PERSYST EMD4E001G08G1-150CAS1R DDR, STT MRAM NR Parallel DDR4 1Gb 8-bit 0 to 85C 667MHz 1.2 BGA-78
PERSYST EMD4E001G16G2-150CAS1 DDR, STT MRAM NR Parallel DDR4 1Gb 16-bit 0 to 85C 667MHz 1.2 BGA-96
PERSYST EMD4E001G16G2-150CAS1R DDR, STT MRAM NR Parallel DDR4 1Gb 16-bit 0 to 85C 667MHz 1.2 BGA-96
Export table

Looking for more options? View the full list.