Press Releases

January 21, 2018 releases

Everspin starts 40nm STT-MRAM volume production for discrete and embedded MRAM offerings

Everspin Technologies, developer and manufacturer of discrete and embedded MRAM, announced this week its recorded revenue for its first 40nm 256Mb STT-MRAM products in the fourth quarter of 2017, and is in the process of ramping its volume production in 2018. This achievement represents an important milestone for STT-MRAM as it is the enabling step for bringing the persistent memory to market.
January 8, 2018 releases

The Future of Spintronic Memory

Over the past 60 years, semiconductor chips have become smaller, cheaper, and more powerful, and their proliferation has enabled the ubiquitous computing we enjoy today. Intel founder Gordon Moore suggested in 1965 that improvements in manufacturing techniques would allow overall processing power for computers to double approximately every two years as the number of transistors on each integrated circuit doubled, an observation that became known as Moore's Law.
September 20, 2017 releases

GLOBALFOUNDRIES Announces Availability of Embedded MRAM on Leading 22FDX® FD-SOI Platform

Advanced embedded non-volatile memory solution delivers ‘connected intelligence' by expanding SoC capabilities on the 22nm process node Santa Clara, Calif., Sept. 20, 2017 (GLOBE NEWSWIRE) -- GLOBALFOUNDRIES today announced the availability of its scalable, embedded magnetoresistive non-volatile
September 14, 2017 releases

Everspin Technologies ready to ship nvNITRO ST-MRAM SSDs

Everspin Technologies is close to completing its first move into solid-state drives. Everspin recently started taking orders for solid-state drives (SSDs) that use spin-torque magnetoresistive random access memory (ST-MRAM) technology. The nvNITRO Storage Accelerator SSDs can deliver ultrafast performance far in excess of NAND flash and approaching DRAM's speed.
September 13, 2017 releases

Neue MRAM-Speicherklasse verhält sich wie nicht-flüchtiges DRAM

MRAMs gelten als zuverlässige Speicher zum Aufzeichnen und Schützen kritischer Systemdaten. Durch fortschrittliche Technologie ist nun MRAM-Speicher möglich, der sich wie nicht-flüchtiges DRAM verhält.
August 22, 2017 releases

ROTH Capital Partners to Host 3rd Annual Datacenter and Intelligent Infrastructure Corporate Access Day in San Francisco, Calif. on September 6, 2017

Event to Feature One-on-One/Group Meetings Between Institutional Investors and Senior Company Management Representing a Range of Datacenter and Intelligent Infrastructure Companies NEWPORT BEACH, Calif., August 22, 2017 /BusinessWire/ --- ROTH Capital Partners (ROTH), www.roth.com , a full service
August 21, 2017 releases

Four Foundries Back MRAM

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology.
August 17, 2017 releases

What is Spin Torque MRAM?

The memory market is going in several different directions at once. On one front, the traditional memory types, such as DRAM and flash, remain the workhorse technologies. Then, several vendors are readying the next-generation memory types.
August 9, 2017 releases

Everspin’s new MRAM-based nvNITRO NVMe card delivers Optane-crushing 1.46 million IOPS

This week, Everspin launched its line of MRAM-based nvNITRO NVMe Storage Accelerator cards with an incredible performance spec: up to 1.46 million IOPS for random 4Kbyte mixed 70/30 read/write operations. In the world of IOPS, that’s very fast. In fact it’s roughly 3x faster than an Intel P4800X Optane SSD card, which is spec’ed at up to 500K IOPS for random 4Kbyte mixed 70/30 read/write operations. Multiple factors contribute to the nvNITRO Storage Accelerator’s speed including Everspin’s new 1Gbit Spin Torque Magnetorestrictive RAM (ST-MRAM) with high-speed, DDR4, SDRAM-compatible I/O; a high-performance, MRAM-specific memory controller IP block compatible with NVMe 1.1+; and the Xilinx Kintex UltraScale KU060 FPGA that implements the MRAM controller and the board’s PCIe Gen3 x8 host interface. Everspin’s nvNITRO NVMe cards will ship in Q4 of 2017 and will be available in 1 and 2Gbyte capacities.
August 8, 2017 releases

Everspin hits the 1Gb milestone with new 28nm MRAMs

Eversping has a bunch of MRAM announcements today starting with the first Gigabit device. On top of that there are a few PCIe based accelerator boards to talk about.
August 8, 2017 releases

Non-Volatile RAM is Real – Everspin Briefing Note

The future is now. For years it seems like non-volatile RAM (NVRAM) has been a technology that is just over the horizon. While there have been some isolated use cases where the technology makes sense and is being used, we are now entering, actually we’ve entered, an era where broad adoption of the technology is realistic. To underscore the state of NVRAM, Everspin Technologiesis now shipping its first version of its nvNITRO Storage Accelerator which puts NVRAM technology in the hands of data center planners and storage system builders.
August 7, 2017 releases

Gbit MRAM Debuts at Flash Summit

SANTA CLARA, Calif. – Everspin announced it is sampling a Gbit MRAM chip and will be in production this year with 1-2 Gbyte cards based on its 256 Mbit chip. The news at the Flash Memory Summithere marks a small but significant advance for a growing collection of persistent memories at an event focused on the still rising market for mainstream NAND.