MRAM solution for unified code and data memory storage
UNISYST MRAM is a new class of unified memory that combines code storage and data memory into a single, high-performance non-volatile device. Designed to overcome the limitations of traditional NOR flash architectures, UNISYST simplifies system design while delivering high speed, endurance, and deterministic performance.
Built on Everspin’s proven STT-MRAM technology, UNISYST extends persistent memory into applications that demand fast access, real-time updates, and reliable operation across power cycles.
UNISYST MRAM’S Unified memory architecture stores code and data in a single device eliminating the need for separate NOR flash and SRAM/DRAM. This simplifies memory hierarchy and reduces BOM.
UNISYST bridges traditional configuration memory with higher-density persistent storage, enabling a seamless transition from flash-based designs.
UNISYST delivers high-bandwidth read and write performance in a non-volatile device, removing the write bottlenecks associated with flash.
Engineered for Real-Time Reliability
Built on Everspin’s proven STT-MRAM technology, UNISYST extends persistent memory into applications that demand fast access, real-time updates, and reliable operation across power cycles.
Beyond Flash, Without Write Bottlenecks
UNISYST bridges traditional configuration memory with higher-density persistent storage, enabling a seamless transition from flash-based designs and delivers high-bandwidth read & write performance in a non-volatile device, removing the write bottlenecks associated with flash.