Everspin unveils a new low latency, PCIe NVMe card based on Spin
Torque MRAM
CHANDLER, Ariz.--(BUSINESS WIRE)--Mar. 8, 2017--
Everspin Technologies, Inc., the leading provider of MRAM solutions,
today announced its nvNITRO line of storage accelerators which delivers
extremely fast read and write times with ultra-low latency. Everspin is
introducing initial capacities of 1 Gigabyte and 2 Gigabyte of Spin
Torque MRAM today, based on its 256Mb DDR3 ST-MRAM. Capacities from 4
Gigabyte up to 16 Gigabytes will be available later in this year
utilizing Everspin’s 1 Gigabit DDR4 ST-MRAM. The nvNITRO ES1GB and ES2GB
operate at a blazing 1,500,000 IOPS with 6 microsecond end-to-end
latency. They are offered in a half-height, half-length (HHHL) PCIe card
with two access modes: NVMe SSD and memory mapped IO (MMIO). Enterprise
storage system designers now have the benefit of memory speed in a
storage form factor and protocol. The use of Everspin’s ST-MRAM means
that the data is persistent and power fail safe without the need for
Supercapacitors or battery backup, saving critical space in storage
racks. The high cycle endurance of ST-MRAM also enables unlimited
uniform drive writes per day, eliminating the need for complex wear
leveling algorithms used in NAND Flash based drives. There is no
degradation in read/write performance over time with Everspin’s ST-MRAM.
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Everspin's new nvNITRO line of storage accelerators deliver extremely fast read/write times with ultra-low latency. (Photo: Business Wire)
This extreme performance, combined with ultra-low and consistent
latency, means that demanding applications such as high frequency
financial trading systems will be able to count on faster, more
predictable transactions. The read/write speed and low latency have
value in many storage applications such as database and file system
acceleration, on-line transaction processing log caches, and metadata
caching/buffering. The need for faster speed across storage networks and
within data centers can now be met with the industry’s first all MRAM
storage cards that provide both block access storage and byte
addressable memory functions on the same platform. The PCIe Gen 3, NVMe
interface makes it simple to add this capability to existing storage
networks and servers because there is no need for special drivers or
operating system changes.
The nvNITRO product is under test at customers now. Initial production
is planned for the second quarter of 2017. Everspin will be expanding
the nvNITRO line with M.2 and U.2 form factors with capacity options
ranging from 512MB to 8GB throughout the year.
About Everspin Technologies
Everspin Technologies is the leading provider of MRAM solutions.
Everspin’s MRAM solutions offer the persistence of non-volatile memory
with the speed and endurance of random access memory (RAM), and enable
the protection of mission critical data particularly in the event of
power interruption or failure. Everspin’s MRAM solutions allow its
customers in the industrial, automotive and transportation, and
enterprise storage markets to design high performance, power efficient
and reliable systems without the need for bulky batteries or capacitors.
Everspin is the only provider of commercially available MRAM solutions
and over the past eight years has shipped over 60 million MRAM units.
For more information, visit www.everspin.com.
Cautionary Statement Regarding Forward-Looking Statements
The statements in this press release regarding the development of future
products and Everspin’s ST-MRAM solutions are forward-looking statements
that are subject to risks and uncertainties. Risks that could cause
these forward-looking statements not to come true include, but are not
limited to: the risk that unexpected technical difficulties may develop
in the final stages of development or production
View source version on businesswire.com: http://www.businesswire.com/news/home/20170308005140/en/
Source: Everspin Technologies, Inc.
Everspin Contact:
Story Public Relations
Michael
Schoolnik, 415-674-3816
Michael@storypr.com
