DDR3 DRAM Compatible MRAM - Spin Torque Technology

DDR3 ST-MRAM in Enterprise SSD

Utilizing Everspin ST-MRAM in an Enterprise SSD to greatly reduce power-fail energy storage while increasing SSD performance and density

Application Note:  As Enterprise SSDs continue to push the envelope in terms of system performance and smaller form factors, SSD solutions providers are facing greater challenges to increase performance and density while continuing to protect data-in-flight from power failures. NAND flash has not significantly increased in performance and the improvement in SSD performance is typically made by adding more parallel channels of flash. This increases the need for energy storage for power fail protection which in turn reduces space available for the storage array for a fixed form factor.

This application note explores the SSD architecture benefits of employing Everspin ST-MRAM on the DDR bus of the SSD controller to provide a high speed, nonvolatile write buffer in order reduce power fail energy storage while increasing performance and storage density.
 
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  DDR3 DRAM Compatible MRAM - Spin Torque Technology

Everspin Spin-Torque MRAM products are designed to comply with all JEDEC DDR3 DRAM features with some timing differences that are unique to Spin-Torque MRAM.

    • Everspin Spin-Torque MRAM products are DDR3 interface memories that are non-volatile, high endurance and capable of operation at rates of up to 1333MT/sec/pin.
    • All control and address inputs are synchronized with a pair of externally supplied differential clocks, with input latching at clock cross points.  
    • I/Os are synchronized with a pair of bidirectional strobes (DQS_t, DQS_c).  The devices use a RAS_n/CAS_n multiplexing scheme and operate at 1.5V.
    • Refresh is not required with Spin-Torque MRAM technology, which greatly simplifies design and reduces system overhead.

Everspin 64Mb DDR3 Spin-Torque MRAM

The EMD3D064M08B1 is an 8Mb x 8 Spin-Torque MRAM capable of DDR3 operation at rates of up to 800MT/sec/pin.  It is available in a 9 x 13mm BGA package.

The EMD3D256M[08G1/16G2] 32Mb x 8 or 16Mb x 16 Spin-Torque MRAM capable of DDR3 operation at rates of up to 1333MT/sec/pin. It is available in a 78-ball [x8] or a 96-ball [x16] 10 x 13mm BGA package.

Request more information about Everspin’s 256Mb ST-MRAM

Download the 256Mb ST-MRAM Product Brief 

 

 Everspin nvNITRO™ NVMe Storage Accelerator Series

ES1GB-N02 nvNITRO™ Accelerator Card

The ES1GB-N02 nvNITRO™ Accelerator Card is a PCIe HHHL card based on Everspin’s ST-MRAM products and an NVMe protocol that delivers greater than 1.5 Million random write, write/read or read IOPS with 6μs latency.  It supports full data integrity on a power failure and virtually unlimited endurance using Everspin nvNitro™ Accelerators.

Download the ES1GB-N02 nvNITRO™ Product Brief

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 ES1GB-U201, ES2GB-U201 Drive

The ES1GB-U201 and ES2GB-U201 are U.2 form factor NVMe storage accelerators based on Everspin’s ST-MRAM products. They can operate in both block mode (NVMe) and direct memory access ( MMIO). They offer extremely low and predictable latency and are power fail safe without system support requirements..

Download the ES1GB-U201, ES2GB-U201 Storage Accelerator Product Brief

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ES128MB-M201 Drive

The ES128MB-M201 is an M.2 form factor NVMe card based on Everspin’s ST-MRAM products. It can operate in both block mode (NVMe) and direct memory access ( MMIO). They offer extremely low and predictable latency and are power fail safe without system support requirements.

Download the ES128MB Storage Accelerator Product Brief

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