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SPIN-TORQUE MRAM: ACCELERATING DATA STORAGE
 
The explosion of content and amount of traffic on the world's networks is driving the need for a faster and more power efficient storage solution. Scaling of capacity/IOPS is needed to service existing and future user needs, while new applications require faster and more consistent response times from storage devices.

Everspin's next-generation Spin-Torque MRAM (ST-MRAM) is a new category of MRAM that will accelerate data storage. ST-MRAM uses an alternate method for programming an MTJ element that has the potential to further simplify the MRAM cell and reduce write power. Programming is accomplished by driving current directly through the MTJ to change the direction of polarization. The read operation is accomplished by sensing the MTJ resistance, just like Toggle MRAM.

ST-MRAM products will offer a new storage class memory solution for non-volatile buffers and caching applications as well as deliver a new nanosecond-class, gigabyte-per-second non-volatile storage tier. Using a spin-polarized current for switching, ST-MRAM can overcome scaling limitations to address persistent DRAM applications in densities from megabits to gigabits.

 
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