EverSpinISO9001 Certified   HOME  :  FEEDBACK  :  CONTACT US  :  CAREERS  
Enter Everspin or Competitor Part #  
Everspin Site Search  
 
 
 
 
MRAM REPLACES BBSRAM MRAM REPLACES nvSRAM MRAM REPLACES FeRAM
 
TOGGLE MRAM
 
MRAM uses a 1 transistor, 1 MTJ cell to provide a simple, high-density memory.

Everspin uses a patented Toggle cell design that delivers high reliability.
During a read, the pass transistor is activated and data is read by comparing the resistance of the cell to a reference device.

During writes, the magnetic field from Write Line 1 and Write Line 2 writes the cell at the intersection of the two lines but does not disturb other cells on either line.

Data is always non-volatile for 20-years at temperature.
 
Copyright © 2008-2014 Everspin Technologies, Inc. - 1347 N. Alma School Road, Suite 220 Chandler, AZ 85224 - Tel: 480-347-1111 - e-mail: contact@everspin.com