News Archive for 2014

Cobham Semiconductor Solutions (formerly Aeroflex) announces QML Q/Q+ certification of their non-volatile products using Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies, Inc. The MRAM-based product offering includes a 64Mbit device, UT8MR8M8, offered in a 40-lead quad flat pack with prototypes available now, and a 16Mbit device, UT8MR2M8, available in a 40-lead flat pack and in production.

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Everspin Technologies Inc. is ready to build its new generation of computer and electronics memory that doesn't need batteries, and it's got a new partner to help it.
The Chandler-based company announced late last month it will work with Santa Clara, California-based GlobalFoundaries to develop silicon wafers for the latest version of its magneto-resistive random access memory.

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The introduction of non-volatile memory as main memory in computer systems could fundamentally change computer architectures and the way we use microprocessor-based systems. Current ST MRAM market leader, Everspin, has reached an agreement with GLOBALFOUNDRIES to supply 300 mm CMOS wafers with Everspin's ST-MRAM technology (Everspin says that they have shipped over 40 M MRAM chips).

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Everspin Technologies entered into a partnership with GlobalFoundries to build fully processed 300mm wafers with Everspin's ST-MRAM technology, starting with GF's 28-nm and 40-nm low-power CMOS platforms. As part of the agreement, GlobalFoundries invested an undisclosed amount in Everspin, and they already acquired ST-MRAM processing equipment (40-nm).

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Everspin has signed up chip maker Global Foundries as a manufacturing partner for its next-generation MRAM (Magnetoresistive RAM) memory chips, in a development that should help the promising technology move toward mass production.

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Everspin is teaming up with GlobalFoundries to offer MRAM on 40nm and 28nm processes. This is an interesting move considering the last devices we saw from them were on 180nm.

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In this interview with Electronic Design's Bill Wong, Everspin's Joe O'Hare describes how MRAM will move to the mainstream through commercialization of the company's ST-MRAM storage products, along with plans for a flexible, scalable embedded memory targeting advanced CMOS ASICs and SoCs of the future.

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By Tom Coughlin, Forbes. ... Mangstor, a manufacturer of NVMe solid-state drives, announced that they were using Everspin's Spin Tunnel Torque Random Access Memory (STT-RAM) to replace some DRAM in their recently introduced MX6000 family of high performance NVMe intelligent storage devices for enterprise and cloud applications. The STT-RAM reduces write data latency while protecting against power loss.

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Flash Memory Summit 2014 - Joe O'Hare, Director of Marketing at Everspin Technologies, sits down with Paul Acorn of TweakTown to discuss Everspin's progress in developing a DDR3 interface MRAM for the data storage market.

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc., the world's leading developer and manufacturer of MRAM worldwide, today disclosed several new customer and ecosystem relationships as it ramps production with the world's first commercially-available Spin Torque MRAM (ST-MRAM). Everspin will be at the Flash Memory Summit in Santa Clara from Aug 5-7, showcasing solutions based on its ST-MRAM with FPGA leader Altera (Booth #621), leading memory module supplier SMART Modular Technologies (Booth #222), memory solutions provider Mobiveil (Booth #721), and Enterprise Non-Volatile Memory Express NVMe Storage Solutions leader Mangstor.

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