News Stories and Press Releases
December 4, 2016
December 3-7, 2016
Everspin Technologies, jointly with GlobalFoundries, will present an invited paper titled: “Technology for Reliable Spin-Torque MRAM Products”
Speaking for Everspin, Jon Slaughter, Ph.D., Vice President, Technology Research and Development at Everspin Technologies states, “… we will present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.”
November 14, 2016
CHANDLER, Ariz., Nov. 14, 2016 (GLOBE NEWSWIRE) -- Everspin Technologies, Inc., (Nasdaq:MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetoresistive Random Access Memory (MRAM), today announced the financial results for its third quarter ended September 30, 2016. Revenue for the third quarter of 2016 was $7.1 million, compared to $7.0 million for the third quarter of 2015. Everspin's net loss for the third quarter of 2016 was $1.4 million, or $0.54 per share, compared to a net loss of $4.5 million, or $1.77 per share for the third quarter of 2015.
November 8, 2016
Everspin displays both the 1Gb DDR4 Perpendicular ST-MRAM device and a 1GByte DDR3 Memory Module (DIMM) at Stand A3-545
Chandler, AZ, November 8, 2016 — Everspin Technologies, Inc., as the leading provider of MRAM solutions, today announced that it will display the industry’s first 1Gb ST- MRAM designed with its perpendicular magnetic tunnel junction ( pMTJ) which is being processed by GlobalFoundries. Visitors can see the MRAM 300mm wafer at Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.
November 7, 2016
Everspin will display a range of customer solutions and technologies at Electronica 2016.
Chandler, AZ, November 7, 2016 — Everspin Technologies, Inc., (MRAM) the world's leading developer and manufacturer of discrete and embedded MRAM, today announced that it will showcase a range of MRAM solutions in Stand 545 in Hall A3 at the upcoming Electronica conference in Munich, Germany on November 8-11.
November 3, 2016
CHANDLER, Ariz., – November 3, 2016 – Everspin Technologies, Inc. (Nasdaq: MRAM), the world's leading developer and manufacturer of discrete and embedded Magnetic RAM "MRAM", today announced that the company will report results for its fiscal third quarter which ended September 30, 2016 after the market closes on November 14, 2016 and will host a conference call to discuss its financial results at 5 pm Eastern Time on the same day.
October 27, 2016
By Adam McPadden, Lead Engineer, Burlington Systems Lab, IBM
One of the key tenets of the OpenPOWER Foundation’s collaborative model is that having open systems and published interfaces allows people to create innovative architectures at all different areas of the system, including ones where there hasn’t been much change in decades like memory.
In validation of this approach, OpenPOWER members IBM, and Everspin have demonstrated a new way for OpenPOWER members to improve application performance with STT-MRAM on the memory bus of a POWER8 server.
October 13, 2016
Chandler, AZ – October 13, 2016 – Everspin Technologies, Inc. today announced the closing of its initial public offering of 5,000,000 shares of its common stock at a public offering price of $8.00 per share, for total gross proceeds of $40 million before the underwriting discount and commissions and other offering expenses.
All of the shares of common stock were offered by Everspin Technologies. The common stock is listed on The NASDAQ Global Market under the ticker symbol "MRAM." In addition, Everspin Technologies has granted the underwriters a 30-day option to purchase up to an additional 750,000 shares of common stock to cover over-allotments at the initial public offering price, less the underwriting discount and commissions.
September 16, 2016
by Rick Merritt, EE Times
SANTA CLARA, Calif. – Globalfoundries announced plans for a 7nm FinFET process that can deliver chips with up to 30% more performance or 60% less power consumption than its current 14nm node. The process will be in production in late 2018, delivering gate pitches as small as 30nm initially using only today’s optical lithography.
September 16, 2016
by Tom Coughlin, Forbes
Two announcements this week on Magnetic Random Access Memory (MRAM) by Everspin and its manufacturing partner, Global Foundries, accelerate the move of this emerging memory from the lab to the fab. Major new product introductions for stand-alone and embedded memory are expected to serve a variety of consumer, industrial and enterprise applications.
September 16, 2016
Excerpt from the Wall Street Journal, “Global Foundries Plans Big Investment in New York State Chip Plant,” story by Don Clark
…the company [Global Foundries] plans to offer future FD-SOI chips with the ability to store data using a new technology called magnetoresistive random-access memory. Global Foundries will introduce circuitry developed by Everspin Technologies Inc., a Chandler, Ariz., company that has been working on alternatives to existing memory chips.