News Stories and Press Releases
April 25, 2016
By Robin Harris for Storage Bits, April 20, 2016
While Intel/Micron have made quite a splash with their 3D XPoint non-volatile memory (NVM) they are not alone in bringing new NVM tech to market. Everspin is ramping MRAM, which has critical advantages over 3D XPoint.
Everspin, the magnetic random access memory (MRAM) company, is forging ahead. They started shipping product 10 years ago and now have over 500 customers, so this is real technology, not a slide deck.
April 18, 2016
by Gary Hilson, EE Times, Designlines
TORONTO – MRAM pioneer Everspin Technologies Inc. is continuing its efforts to expand the applications for its non-volatile memory by displacing DRAM as a persistent memory in enterprise storage applications.
In a telephone interview with EE Times, Everspin CEO Phill LoPresti said storage and servers OEMs have been evaluating its ST-MRAM products, and the company will deliver further density increases for its MRAM-based storage class memory (SCM) and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) ST-MRAM later this year.
April 13, 2016
Everspin Releases Highest Density MRAM Products to Create Fastest And Most Reliable Non-Volatile Storage Class Memory
Everspin plans production of 256Mb & 1Gb products, bringing the most advanced memory solutions to the multi-billion dollar market for persistent memory in storage devices and servers.
Chandler, AZ, April 13, 2016
Everspin Technologies announced today that it is shipping 256Mb ST-MRAM samples to global customers, enabling new product solutions using a true MRAM-based Storage Class Memory (SCM). This 256Mb ST-MRAM product breaks the record for the highest density commercial MRAM currently available in the market.
Everspin, having held the previous record, has consistently led the industry, delivering the highest density MRAM products. The company also plans further density increases and expects to sample a 1Gb product based on its proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology (ST-MRAM) later this year. Everspin’s MRAM has demonstrated interface speeds comparable to DRAM; the new 256Mb and 1Gb ST-MRAM products will continue this performance with DDR3 and DDR4 interfaces, respectively.
April 8, 2016
Chandler, AZ, April 7, 2016 Everspin Technologies today announced that IBM has demonstrated Everspin’s latest Spin Torque DDR3 MRAM in the ConTutto platform in a Power8 system. The demonstration showed show how Everspin’s DDR3 ST-MRAM operates as persistent memory, accelerating storage and server applications. ConTutto is an IBM research configurable platform for innovation in the memory subsystem of an OpenPOWER node. The DDR3 interface on the Everspin Spin Torque MRAM makes it easy for developers to take advantage of the write speed and persistence of MRAM. In his keynote address, Brad McCredie, Vice President and IBM Fellow, described this as the first functional demonstration of a storage class memory in an enterprise system.
March 29, 2016
Chandler, AZ, March 29, 2016 Everspin Technologies today announced that it has joined the OpenPOWER Foundation, an open development community based on the POWER microprocessor architecture.
Everspin joins a growing roster of technology organizations working collaboratively to build advanced server, networking, storage and acceleration technology as well as industry leading open source software aimed at delivering more choice, control and flexibility to developers of next-generation, hyperscale and cloud data centers. The group makes POWER hardware and software available to open development for the first time, as well as making POWER intellectual property licensable to others, greatly expanding the ecosystem of innovators on the platform. .
March 1, 2016
Storage Newsletter March 1, 2016 - Everspin Technologies, Inc., has announced production availability of the fastest non-volatile memory with a Quad SPI interface, the MR10Q010, 1Mb QSPI MRAM.
This high performance device can read and write data at 104MHz without the write delays encountered in other non-volatile technology such as NOR Flash.
Combined with limitless write cycle endurance, the MR10Q010 is for applications that require continuous recording of critical system data with the added benefit of protection of the data in the event of unexpected power loss, without the need for batteries or capacitors. Applications such as enterprise RAID controllers can take advantage of these features to enhance the reliability of mission critical storage systems by using the MR10Q010 as a journal memory that records continuously updated system metadata.
February 23, 2016
ORLANDO, Florida, February 23, 2016 – Micross Components (“Micross”), a global provider of specialty electronic components with a 35-year history in providing authentic, high-reliability products, announced an agreement with Everspin Technologies to distribute Everspin’s industry-leading MRAM products in die and wafer form.
February 22, 2016
February 19, 2016
Everspin offers a 16Mb MRAM with automotive temperature range and a 128kB SPI MRAM in Grade 1 and Grade 3 ranges for use in automotive and other high reliability systems
February 18, 2016
Schneider Electric Selects Everspin for Modicon M580 ePAC next generation Programmable Automation Controllers
Chandler, AZ, February 18, 2016 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, is providing its 16-Megabit MR4A16BMA35 Magnetoresistive RAM (MRAM) to users of Schneider Electric’s Modicon M580 High End Programmable Automation Controllers, offering them unprecedented data backup capabilities.