News Stories and Press Releases
November 6, 2015
By Pradeep Chakraborty, Control Engineering Asia.
Artesyn Embedded Technologies announced a new high performance VME single board computer, the MVME8105, to provide more computing performance, data throughput and long life cycle support for a range of high end industrial control, C4ISR and mission critical applications.
Featuring the Freescale QorIQ P5020 2.0 GHz processor, the MVME8105 provides 4 GB soldered DDR3-1333 MHz ECC memory, 512 K MRAM non-volatile memory and 8 GB eMMC NAND Flash. It offers multiple USB, Serial and Ethernet ports and supports a range of operating systems including Wind River VxWorks, Linux and Green Hills Integrity.
September 18, 2015
Mark Lapedus from Semiconductor Engineering interviews Everspin's president and CEO, Phillip LoPresti
Today, the industry is shipping various next-generation memory types, such as 3D NAND, MRAM and ReRAM. In fact, MRAM has been shipping for some time. To get a handle on MRAM, Semiconductor Engineering sat down to discuss the technology with Phillip LoPresti, president and chief executive of Everspin, a supplier of MRAMs.
September 16, 2015
Semiconductor Engineering, by Mark Lapedus.
Gaps in the memory hierarchy have created openings for new types of memory, and there is no shortage of possibilities.
The next big thing is a second-generation MRAM technology called spin-transfer torque MRAM (STT-MRAM). STT-MRAM is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction (MTJ) can be modified using a spin-polarized current.
August 24, 2015
TORONTO — Everspin Technologies Inc. (Chandler, Ariz.) built its business as a magnetoresistive RAM (MRAM) company through industrial and automotive applications, but it’s always been looking at broader applications for both its MRAM and Spin-Torque MRAM (ST-MRAM), particularly for applications that require data persistence and integrity, low latency, and security.
Now its MRAM has found its way into the M.2 form factor as part of Aupera Technologies' (Vancouver, BC) All Flash Array. The AupM001 is an M.2 MRAM module designed with Everspin’s EMD3D064M ST-MRAM. Its initial capacity is 32 MB, with higher capacities becoming available soon, said Everspin president and CEO Phill LoPresti in a telephone interview with EE Times. “We feel this is right in the sweet spot we targeted the products for when we started development."
August 13, 2015
Everspin Technologies, Inc., and Aupera Technologies Inc., announce the world’s first all-MRAM storage module in the M.2 form factor, the Aupera AupM001. The AupM001 is equipped with Everspin’s non-volatile, high endurance, 64 Mb DDR3 ST-MRAM devices and a PCIe backhaul interface. It is currently used in Aupera’s All Flash Array system for parity check and as a hardware accelerated engine for specific applications that require low latency and high performance. The initial capacity is 32 MB, with higher capacity options coming soon.
June 18, 2015
Non-Volatile memory on the shop floor
Every time SemiAccurate talks about Everspin’s MRAM, a lot of people ask about what it can be found in. Today we can add another name to the list that is slightly out of our normal area of coverage, industrial programmable logic controllers (PLCs) from Koyo.
June 17, 2015
Everspin’s MRAM enables Koyo Electronics Industries new battery-free Direct Logic PLC with higher density, faster speeds
Chandler, AZ, June 17, 2015 — Everspin Technologies, Inc., the world's leading developer and manufacturer of discrete and embedded MRAM, and Koyo Electronics Industries, a leading manufacturer of highly reliable factory automation systems and automotive parts, today announced that Everspin’s MRAM is now designed into Koyo Electronics Industries’ new Direct Logic 205 (DL205) Series Programmable Logic Controllers (PLCs).
June 5, 2015
by Tom Coughlin, Forbes
Technology is the great generator of wealth in the modern world. It is by the application of applied thought and its expression in the world around us that much of our economy is based. Digital storage and memory are key elements in this great generator of value, as these are devices that retain content and make it available for our use.
May 6, 2015
By Paula Doe, SEMI
Ever growing volumes of data to be stored and accessed, and advancing process technologies for sophisticated control of deposition and etch in complex stacks of new materials, are creating a window of opportunity for an emerging variety of next-generation non-volatile memory technologies. While Flash memory goes vertical for higher densities, resistive RAM and spin-transfer magnetic RAM technologies are moving towards commercial manufacture for initial applications in niches that demand a different mix of speed, power and endurance than flash or SRAM.
April 28, 2015